Patent US5742183A successfully refreshed from Google Patents.
US5742183A
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US
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Level shift semiconductor device
Assignee: Toshiba Corp
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Filing: 1996-08-26
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Granted: 1998-04-21
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Expires: 2016-08-26
Abstract
Abstract A level shift semiconductor device converts a signal level into another level between circuits connected to each other having different supply voltages. An input signal is supplied to the source of a first MOS transistor of a first-conductivity type (NMOS). The drain of the 1st NMOS transistor is connected to the input terminal of an inverter. An output signal is outputted via the output terminal of the inverter. The drain and gate of a first MOS transistor of a second-conductivity type (PMOS) are connected to the input and output terminals of the inverter, respectively. The gate and source of a second NMOS transistor are connected to the output terminal of the inverter and the gate of the 1st NMOS transistor, respectively. The gate and source of a second PMOS transistor are connected to the gate and source of the 2nd NMOS transistor. A first supply voltage is supplied to the drain of the 2nd PMOS transistor. And, a second supply voltage is supplied to the inverter, the source of the 1st PMOS transistor, and the drain of the 2nd NMOS transistor. The second voltage is larger in absolute value than the first voltage.
Inventors
- 👤 Tadahiro Kuroda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 08:53
CPC Classifications
H; H03; H03K; H03K6/00; H03K6/02; H03K19/00; H03K19/0175; H03K19/0185; H03K19/018507; H03K19/018521
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
236 words
A level shift semiconductor device, comprising: a first MOS transistor of a first-conductivity type having a source supplied with an input signal; an inverter having an input terminal connected to a drain of the first MOS transistor of the first-conductivity type and an output terminal for outputting an output signal; a first MOS transistor of a second-conductivity type having a drain connected to the input terminal of the inverter and a gate connected to the output terminal of the inverter, the second conductivity type being opposite of the first conductivity type; a second MOS transistor of the first-conductivity type having a gate connected to the output terminal of the inverter and a source connected to a gate of the first MOS transistor of the first-conductivity type; a second MOS transistor of the second-conductivity type having a gate connected to the gate of the second MOS transistor of the first-conductivity type and a source connected to the source of the second MOS transistor of the first-conductivity type; a first voltage supply for supplying a first supply voltage to a drain of the second MOS transistor of the second-conductivity type; and a second voltage supply for supplying a second voltage to the inverter, a source of the first MOS transistor of the second-conductivity type, and a drain of the second MOS transistor of the first-conductivity type, the second voltage being larger in absolute value than the first voltage.
Claim 2
Dependent Claim
236 words
A level shift semiconductor device, comprising: a first MOS transistor of a first-conductivity type having a source supplied with an input signal; an inverter having an input terminal connected to a drain of the first MOS transistor of the first-conductivity type and an output terminal for outputting an output signal; a first MOS transistor of a second-conductivity type having a drain connected to the input terminal of the inverter and a gate connected to the output terminal of the inverter, the second conductivity type being opposite of the first conductivity type; a second MOS transistor of the first-conductivity type having a gate connected to the output terminal of the inverter and a source connected to a gate of the first MOS transistor of the first-conductivity type; a second MOS transistor of the second-conductivity type having a gate connected to the gate of the second MOS transistor of the first-conductivity type and a source connected to the source of the second MOS transistor of the first-conductivity type; a first voltage supply for supplying a first supply voltage to a drain of the second MOS transistor of the second-conductivity type; and a second voltage supply for supplying a second voltage to the inverter, a source of the first MOS transistor of the second-conductivity type, and a drain of the second MOS transistor of the first-conductivity type, the second voltage being larger in absolute value than the first voltage.
Claim 3
Dependent Claim
40 words
The level shift semiconductor device of claim 1, wherein a threshold value of the second MOS transistor of the first-conductivity type is set to a value smaller than another threshold value of the first MOS transistor of the first-conductivity type.
Claim 4
Dependent Claim
36 words
The level shift semiconductor device of claim 1, wherein the first and the second MOS transistors of the first-conductivity type and the first and the second MOS transistors of the second-conductivity type are of enhancement type.
Claim 5
Dependent Claim
154 words
A level shift semiconductor device, comprising: a first-conductivity type MOS transistor having a source supplied with an input signal; an inverter having an input terminal connected to a drain of the first-conductivity type MOS transistor and an output terminal for outputting an output signal; a second-conductivity MOS transistor having a drain connected to the input terminal of the inverter and a gate connected to the output terminal of the inverter, the second conductivity type being opposite of the first-conductivity type; a bias circuit for applying a first voltage obtained by adding a maximum voltage of the input signal and a threshold voltage of the first-conductivity type MOS transistor, to a gate of the first-conductivity type MOS transistor; and a voltage supply for supplying a second voltage to a source of the second-conductivity type MOS transistor and the inverter, the second voltage being larger in absolute value than the maximum voltage of the input signal.
Claim 6
Dependent Claim
154 words
A level shift semiconductor device, comprising: a first-conductivity type MOS transistor having a source supplied with an input signal; an inverter having an input terminal connected to a drain of the first-conductivity type MOS transistor and an output terminal for outputting an output signal; a second-conductivity MOS transistor having a drain connected to the input terminal of the inverter and a gate connected to the output terminal of the inverter, the second conductivity type being opposite of the first-conductivity type; a bias circuit for applying a first voltage obtained by adding a maximum voltage of the input signal and a threshold voltage of the first-conductivity type MOS transistor, to a gate of the first-conductivity type MOS transistor; and a voltage supply for supplying a second voltage to a source of the second-conductivity type MOS transistor and the inverter, the second voltage being larger in absolute value than the maximum voltage of the input signal.
Claim 7
Dependent Claim
37 words
The level shift semiconductor device of claim 4, wherein the bias circuit consists of a constant current source and a diode function element connected in series between the maximum voltage of the input signal and second voltage.
Claim 8
Dependent Claim
21 words
The level shift semiconductor device of claim 4, wherein the first and the second conductivity-type MOS transistors are of enhancement type.
Claim 9
Dependent Claim
250 words
A level shift semiconductor device, comprising: a first MOS transistor of a first-conductivity type having a source supplied with an input signal; inverter having an input terminal connected to a drain of the first MOS transistor of the first-conductivity type and an output terminal for outputting an output signal; a first MOS transistor of a second-conductivity type having a drain connected to the input terminal of the inverter and a gate connected to the output terminal of the inverter, the second conductivity type being opposite of the first conductivity type; a second MOS transistor of the first-conductivity type having a gate connected to the output terminal of the inverter and a source connected to a gate of the first MOS transistor of the first-conductivity type, wherein a drain and the gate of the second MOS transistor of the first-conductivity type are connected together to the output terminal of the inverter; a second MOS transistor of the second-conductivity type having a gate connected to the gate of the second MOS transistor of the first conductivity type and a source connected to the source of the second MOS transistor of the first-conductivity type; a first voltage supply for supplying a first supply voltage to a drain of the second MOS transistor of the second-conductivity type; and a second voltage supply for supplying a second voltage to the inverter and a source of the first MOS transistor of the second-conductivity type, the second voltage being larger in absolute value than the first voltage.
Claim 10
Dependent Claim
250 words
A level shift semiconductor device, comprising: a first MOS transistor of a first-conductivity type having a source supplied with an input signal; inverter having an input terminal connected to a drain of the first MOS transistor of the first-conductivity type and an output terminal for outputting an output signal; a first MOS transistor of a second-conductivity type having a drain connected to the input terminal of the inverter and a gate connected to the output terminal of the inverter, the second conductivity type being opposite of the first conductivity type; a second MOS transistor of the first-conductivity type having a gate connected to the output terminal of the inverter and a source connected to a gate of the first MOS transistor of the first-conductivity type, wherein a drain and the gate of the second MOS transistor of the first-conductivity type are connected together to the output terminal of the inverter; a second MOS transistor of the second-conductivity type having a gate connected to the gate of the second MOS transistor of the first conductivity type and a source connected to the source of the second MOS transistor of the first-conductivity type; a first voltage supply for supplying a first supply voltage to a drain of the second MOS transistor of the second-conductivity type; and a second voltage supply for supplying a second voltage to the inverter and a source of the first MOS transistor of the second-conductivity type, the second voltage being larger in absolute value than the first voltage.
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