US5741738A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making corner protected shallow trench field effect transistor
Assignee: International Business Machines Corp
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Filing: 1996-02-21
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Granted: 1998-04-21
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Expires: 2016-02-21
Abstract
Abstract A semiconductor structure to prevent gate wrap-around and corner parasitic leakage comprising a semiconductor substrate having a planar surface. A trench is located in the substrate, the trench having a sidewall. An intersection of the trench and the surface forms a corner. A dielectric lines the sidewall of the trench. And, a corner dielectric co-aligned with the corner extends a subminimum dimension distance over the substrate from the corner.
Inventors
- 👤 Jack A. Mandelman
- 👤 Brian J. Machesney
- 👤 Hing Wong
- 👤 Michael M. Armacost
- 👤 Pai-Hung Pan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 09:37
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/10; H10W10/17
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
113 words
A method of fabricating a semiconductor structure comprising the steps of: (a) providing a semiconductor substrate having a substantially planar surface; (b) forming a coating on said surface; (c) forming a window in said coating, said window having an edge; (d) forming a trench in said substrate, said trench having a sidewall co-aligned to said edge, an intersection of said trench and said surface forming a corner; (f) forming a corner material co-aligned with said corner and extending over said surface; and (g) forming a field effect transistor having a channel having a current path extending parallel to said corner, said corner, said channel being spaced from said corner by said corner dielectric.
Claim 2
Independent Claim
113 words
A method of fabricating a semiconductor structure comprising the steps of: (a) providing a semiconductor substrate having a substantially planar surface; (b) forming a coating on said surface; (c) forming a window in said coating, said window having an edge; (d) forming a trench in said substrate, said trench having a sidewall co-aligned to said edge, an intersection of said trench and said surface forming a corner; (f) forming a corner material co-aligned with said corner and extending over said surface; and (g) forming a field effect transistor having a channel having a current path extending parallel to said corner, said corner, said channel being spaced from said corner by said corner dielectric.
Claim 3
Dependent Claim
51 words
A method as recited in claim 1, wherein said step (f) is performed after said step (c) and before said step (d), said step (f) comprising the step of providing a spacer along exposed edges of said window, and wherein in said step (d) said trench is self-aligned to said spacer.
Claim 4
Dependent Claim
48 words
A method as recited in claim 2, wherein said spacer's is removed after said step (d), said method further comprising the step of lining said sidewall and said edge with insulator so that a portion of said insulator forms a corner dielectric on said substrate adjacent said corner.
Claim 5
Dependent Claim
18 words
A method as recited in claim 3, wherein a portion of said material remains after processing is complete.
Claim 6
Dependent Claim
21 words
A method as recited in claim 1, further comprising the step of: (e) lining said sidewall and said edge with insulator.
Claim 7
Dependent Claim
42 words
A method as recited in claim 5, further comprising after said (d) the step of removing said coating adjacent said trench and wherein said material of said step (f) is formed by providing an insulating spacer along exposed edges of said insulator.
Claim 8
Dependent Claim
21 words
A method as recited in claim 5, wherein in said step (e) said lining step fills said trench with trench dielectric.
Claim 9
Dependent Claim
24 words
A method as recited in claim 7, wherein said step (e) further comprises the step of planarizing said trench dielectric, stopping on said coating.
Claim 10
Dependent Claim
13 words
A method as recited in claim 5, said corner material comprising a spacer.
Claim 11
Dependent Claim
18 words
A method as recited in claim 1, wherein a portion of said material remains after processing is complete.
Claim 12
Dependent Claim
13 words
A method as recited in claim 1, wherein said coating is an insulator.
Claim 13
Dependent Claim
13 words
A method as recited in claim 1, wherein said material is an insulator.
Claim 14
Dependent Claim
19 words
A method as recited in claim 1, wherein said step (c) is accomplished by the step of directional etching.
Claim 15
Dependent Claim
24 words
A method as recited in claim 1, further comprising the step of providing an insulator in said trench, wherein said insulator fills said trench.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-04-20 | 2001-10-20 | 2002-04-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-04-20 | 2005-10-20 | 2006-04-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-04-20 | 2009-10-20 | 2010-04-21 | $7700.00 | Window Closed / Lapsed |