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JPS5743431A Expired / Lapsed JP ⏱️ 0.0 years remaining

Manufacture of semiconductor device

Assignee: Toshiba Corp
•
Filing: 1981-07-09
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Granted: —
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Expires: 2001-07-09
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Abstract

Abstract PURPOSE:To remove air bubbles produced at the time of forming a glassivation film by removing in advance an insulating film part to become burrs in a mesa etching. CONSTITUTION:A hole having a size larger than the width (c) of a desired mesa groove to be formed by mesa etching is formed at an insulating film 2 coated on a semiconductor substrate 1 formed with a semiconductor region. Then, a photoresist layer 4 is so formed as to cover the residual part of the film 2 and the periphery of the exposed part of the substrate 1. Thereafter, with the layer 4 as a mask an etchant is used for the mesa etching. A mesa groove 5 having the width (c) smaller than the width of the hole of the film 2 and larger than the width specified by the layer 4 is formed by mesa etching. Eventually, the layer 4 is removed, and a glass film 6 is covered on the overall surface.

Inventors

  • 👤 Tsuneo Atsumi
  • 👤 Masafumi Miyagawa
  • 👤 Kenichi Goto

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-10-30 02:01
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/01; H10W74/10; H10W74/131; H10W74/134

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