Abstract This is a system and method of forming an electrical contact to the optical coating of an infrared detector. The method may comprise: forming thermal isolation trenches 22 and contact vias 23 in a substrate 20; depositing a bias contact metal 32 into the vias 23 forming biasing contact areas around a periphery of the substrate 20; depositing a first trench filler 24 in the trenches 22 and vias 23; replanarizing; depositing a common electrode layer 25 over the thermal isolation trenches and the biasing contact areas; mechanically thinning the substrate 20 to expose the biasing contact area 32 and the trench filler 24; depositing a contact metal 34 on the backside of the substrate 20, the exposed trench filler 24 and the exposed bias contact area; and etching the contact metal 34 and the trench filler 24 to form pixel mesas of the contact metal 34 and the substrate 20. The thermal isolation trenches 22 and the bias contact vias 23 may be formed by ion milling or laser vaporization. Alternately, the bias contact areas 23 may be formed by performing laser vaporization on the substrate 20 to produce conductive 23 areas within the substrate.
A method of forming an electrical contact to a common electrode of an infrared detector, said method comprising: forming thermal isolation trenches in a substrate; depositing a first trench filler in said thermal isolation trenches; forming bias contact areas around a periphery of said substrate; depositing a common electrode layer over said substrate, said thermal isolation trenches and said bias contact areas; thinning said substrate to expose said bias contact areas and said trench filler; depositing a contact metal on said backside of said substrate, said exposed trench filler and said exposed bias contact areas; and etching said contact metal and said trench filler to form pixel mesas of said contact metal and said substrate.
Claim 2
Independent Claim
115 words
A method of forming an electrical contact to a common electrode of an infrared detector, said method comprising: forming thermal isolation trenches in a substrate; depositing a first trench filler in said thermal isolation trenches; forming bias contact areas around a periphery of said substrate; depositing a common electrode layer over said substrate, said thermal isolation trenches and said bias contact areas; thinning said substrate to expose said bias contact areas and said trench filler; depositing a contact metal on said backside of said substrate, said exposed trench filler and said exposed bias contact areas; and etching said contact metal and said trench filler to form pixel mesas of said contact metal and said substrate.
Claim 3
Dependent Claim
20 words
The method of claim 1, wherein said forming thermal isolation trenches and said forming bias contact areas include laser vaporization.
Claim 4
Dependent Claim
14 words
The method of claim 1, wherein said forming thermal isolation trenches include ion milling.
Claim 5
Dependent Claim
21 words
The method of claim 1, wherein said method further includes planarizing said first trench filler after depositing said first trench filler.
Claim 6
Dependent Claim
21 words
The method of claim 1, wherein said method further includes depositing an optical coating after said depositing of said common electrode.