Abstract The present invention is directed to a semiconductor device formed on a silicon substrate that has at least one inductor integrated therewith. The inductor is formed on a region of porous silicon formed in the substrate. The porous silicon reduces the capacitive and inductive coupling of the inductor to the substrate. Therefore, the integrated inductors of the present invention are capable of having a higher inductance at higher resonance frequencies (i.e. 2 GHz or greater) than conventional inductors. Devices with inductors that operate at these frequencies are desirable for wireless applications. The present invention is also directed to a process for fabricating the device in which the porous silicon is formed using an annodization technique, and wherein the porous silicon so formed is maintained in an essentially unoxidized state throughout the remainder of the process.
A semiconductor device comprising: a silicon substrate; a region of porous silicon formed in the substrate, wherein the region of porous silicon is essentially unoxidized; and an inductor formed on the porous silicon region wherein the position of the inductor on the silicon substrate is within the boundaries of the region of porous silicon.
Claim 2
Dependent Claim
54 words
A semiconductor device comprising: a silicon substrate; a region of porous silicon formed in the substrate, wherein the region of porous silicon is essentially unoxidized; and an inductor formed on the porous silicon region wherein the position of the inductor on the silicon substrate is within the boundaries of the region of porous silicon.
Claim 3
Dependent Claim
23 words
The device of claim 1 wherein the region of porous silicon has a depth of at least about 200 μm in the substrate.
Claim 4
Dependent Claim
23 words
The device of claim 2 wherein the region of porous silicon has a depth of at least about 400 μm in the substrate.
Claim 5
Dependent Claim
37 words
The device of claim 1 further comprising a layer of an insulator material between the porous silicon region and the inductor wherein the insulator material is selected from the group consisting of silicon dioxide and silicon nitride.
Claim 6
Dependent Claim
20 words
The device of claim 4 wherein the thickness of the insulator material is about 10 nm to about 1000 nm.