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US5736240A
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Amorphous rare earth oxides
Assignee: 3M Co
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Filing: 1995-10-31
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Granted: 1998-04-07
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Expires: 2015-10-31
Abstract
Abstract A stable amorphous rare earth oxide, such as Y 2 O 3 , including a stabilizer, such as carbon, silicon carbide, or hafnium oxide. The stable amorphous rare earth oxide can be used in a dielectric layer in a magneto-optical recording medium.
Inventors
- 👤 Michael B. Hintz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:39
CPC Classifications
G; G11; G11B; G11B11/00; G11B11/10; G11B11/105; G11B11/10582; G11B11/10584; C; C01; C01F; C01F17/00; C01F17/20; C01F17/206; C01F17/218; G11B11/10586; G11B11/10589; H; H01; H01F; H01F10/00; H01F10/08; H01F10/10; H01F10/18; H01F10/187; H01F10/26; H01F10/265; C01P; C01P2002/00; C01P2002/02; C01P2002/70; C01P2002/72; C01P2002/77; C01P2006/00; C01P2006/42; Y; Y10; Y10S; Y10S428/00; Y10S428/90; Y10T; Y10T428/00; Y10T428/26; Y10T428/263; Y10T428/264; Y10T428/265
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
151 words
A magneto-optical recording medium, comprising a magneto-optical layer, end a dielectric layer comprising at least 51% by volume rare earth oxide and 2 to 49% by volume of a stabilizer for providing resistance to thermally induced crystallization of said dielectric layer, wherein said dielectric layer, when examined by transmission electron microscopy, exhibits a diffuse halo electron diffraction pattern and contains substantially no crystallites larger than 2 nm, thereby indicating said dielectric layer is amorphous, and wherein a film of said dielectric layer having a thickness of ≈100 nm deposited on a TbFeCo film having a thickness of ≈5 nm, after annealing at 300° C. for one hour in air, a 10 degrees≦2θ≦60 degrees X-ray diffraction scan using copper K-alpha incident radiation of said film of said dielectric layer on said TbFeCo film exhibits no X-ray diffraction peaks corresponding to a crystalline phase of composition, thereby indicating said dielectric layer is stable.
Claim 2
Dependent Claim
151 words
A magneto-optical recording medium, comprising a magneto-optical layer, end a dielectric layer comprising at least 51% by volume rare earth oxide and 2 to 49% by volume of a stabilizer for providing resistance to thermally induced crystallization of said dielectric layer, wherein said dielectric layer, when examined by transmission electron microscopy, exhibits a diffuse halo electron diffraction pattern and contains substantially no crystallites larger than 2 nm, thereby indicating said dielectric layer is amorphous, and wherein a film of said dielectric layer having a thickness of ≈100 nm deposited on a TbFeCo film having a thickness of ≈5 nm, after annealing at 300° C. for one hour in air, a 10 degrees≦2θ≦60 degrees X-ray diffraction scan using copper K-alpha incident radiation of said film of said dielectric layer on said TbFeCo film exhibits no X-ray diffraction peaks corresponding to a crystalline phase of composition, thereby indicating said dielectric layer is stable.
Claim 3
Dependent Claim
12 words
The recording medium of claim 1, further comprising a second dielectric layer.
Claim 4
Dependent Claim
17 words
The recording medium of claim 1, wherein said rare earth oxide is Y 2 O 3 .
Claim 5
Dependent Claim
42 words
The recording medium of claim 1, wherein said rare earth oxide is selected from the group of La 2 O 3 , Tb 2 O 3 , CeO x , (1≦x≦1.5) Sc 2 O 3 , and Yb 2 O 3 .
Claim 6
Dependent Claim
22 words
The recording medium of claim 1, wherein said stabilizer is selected from the group consisting of carbon, silicon carbide, and hafnium oxide.
Claim 7
Dependent Claim
35 words
The recording medium of claim 1, wherein said stabilizer comprises less than about 30% of said dielectric layer by volume, and said rare earth oxide comprises greater than 70% of said dielectric layer by volume.
Claim 8
Dependent Claim
23 words
The recording medium of claim 1, wherein said dielectric layer has a refractive index with a real component of between 1.7 and 2.4.
Claim 9
Dependent Claim
22 words
The recording medium of claim 1, wherein said dielectric layer has a refractive index with an imaginary coefficient of less than 0.03.
Claim 10
Dependent Claim
15 words
The recording medium of claim 1, wherein said dielectric layer is deposited via non-reactive sputtering.
Claim 11
Dependent Claim
15 words
The recording medium of claim 1, wherein said dielectric layer is deposited via D.C. sputtering.
Claim 12
Dependent Claim
141 words
A dielectric layer comprising at least 51% by volume rare earth oxide and 2 to 49% by volume of a stabilizer for providing resistance to thermally induced crystallization of said dielectric layer, wherein said dielectric layer, when examined by transmission electron microscopy, exhibits a diffuse halo electron diffraction pattern and contains substantially no crystallites larger than 2 nm, thereby indicating said dielectric layer is amorphous, and wherein a film of said dielectric layer having a thickness of ≈100 nm deposited on a TbFeCo film having a thickness of ≈5 nm, after annealing at 300° for one hour in air, a 10 degrees≦2θ≦60 degrees X-ray diffraction scan using copper K-alpha incident radiation of said film of said dielectric layer on said TbFeCo film exhibits no X-ray diffraction peaks corresponding to a crystalline phase of composition, thereby indicating said dielectric layer is stable.
Claim 13
Dependent Claim
141 words
A dielectric layer comprising at least 51% by volume rare earth oxide and 2 to 49% by volume of a stabilizer for providing resistance to thermally induced crystallization of said dielectric layer, wherein said dielectric layer, when examined by transmission electron microscopy, exhibits a diffuse halo electron diffraction pattern and contains substantially no crystallites larger than 2 nm, thereby indicating said dielectric layer is amorphous, and wherein a film of said dielectric layer having a thickness of ≈100 nm deposited on a TbFeCo film having a thickness of ≈5 nm, after annealing at 300° for one hour in air, a 10 degrees≦2θ≦60 degrees X-ray diffraction scan using copper K-alpha incident radiation of said film of said dielectric layer on said TbFeCo film exhibits no X-ray diffraction peaks corresponding to a crystalline phase of composition, thereby indicating said dielectric layer is stable.
Claim 14
Dependent Claim
17 words
The dielectric layer of claim 11, wherein said rare earth oxide is Y 2 O 3 .
Claim 15
Dependent Claim
41 words
The dielectric layer of claim 11, wherein said rare earth oxide is selected from the group of La 2 O 3 , Tb 2 O 3 , CeO x (1≦x≦1.5), Sc 2 O 3 , and Yb 2 O 3 .
Claim 16
Dependent Claim
22 words
The dielectric layer of claim 11, wherein said stabilizer is selected from the group consisting of carbon, silicon carbide, and hafnium oxide.
Claim 17
Dependent Claim
35 words
The dielectric layer of claim 11, wherein said stabilizer comprises less than about 30% of said dielectric layer by volume, and said rare earth oxide comprises greater than 70% of said dielectric layer by volume.
Claim 18
Dependent Claim
23 words
The dielectric layer of claim 11, wherein said dielectric layer has a refractive index with a real component of between 1.7 and 2.4.
Claim 19
Dependent Claim
22 words
The dielectric layer of claim 11, wherein said dielectric layer has a refractive index with an imaginary coefficient of less than 0.03.
Claim 20
Dependent Claim
15 words
The dielectric layer of claim 11, wherein said dielectric layer is deposited via non-reactive sputtering.
Claim 21
Dependent Claim
15 words
The dielectric layer of claim 11, wherein said dielectric layer is deposited via D.C. sputtering.
Claim 22
Dependent Claim
142 words
A composition comprising at least 51% by volume rare earth oxide and 2 to 49% by volume of a stabilizer for providing resistance to thermally induced crystallization of said composition, wherein said composition is a film, and wherein said composition, when examined by transmission electron microscopy, exhibits a diffuse halo electron diffraction pattern and contains substantially no crystallites larger than 2 nm, thereby indicating said composition is amorphous, and wherein a film of said composition having a thickness of ≈100 nm deposited on a TbFeCo film having a thickness of ≈5 nm, after annealing at 300° C. for one hour in air, a 10 degrees≦2θ≦60 degrees X-ray diffraction scan using copper K-alpha incident radiation of said film of said composition on said TbFeCo film exhibits no X-ray diffraction peaks corresponding to a crystalline phase of composition, thereby indicating said composition is stable.
Claim 23
Dependent Claim
142 words
A composition comprising at least 51% by volume rare earth oxide and 2 to 49% by volume of a stabilizer for providing resistance to thermally induced crystallization of said composition, wherein said composition is a film, and wherein said composition, when examined by transmission electron microscopy, exhibits a diffuse halo electron diffraction pattern and contains substantially no crystallites larger than 2 nm, thereby indicating said composition is amorphous, and wherein a film of said composition having a thickness of ≈100 nm deposited on a TbFeCo film having a thickness of ≈5 nm, after annealing at 300° C. for one hour in air, a 10 degrees≦2θ≦60 degrees X-ray diffraction scan using copper K-alpha incident radiation of said film of said composition on said TbFeCo film exhibits no X-ray diffraction peaks corresponding to a crystalline phase of composition, thereby indicating said composition is stable.
Claim 24
Dependent Claim
16 words
The composition of claim 20, wherein said rare earth oxide is Y 2 O 3 .
Claim 25
Dependent Claim
42 words
The composition of claim 20, wherein said rare earth oxide is selected from the group consisting of La 2 O 3 , Tb 2 O 3 , CeO x , Sc 2 O 3 and Yb 2 O 3 , wherein 1≦x≦1.5.
Claim 26
Dependent Claim
17 words
The composition of claim 20, wherein said rare earth oxide comprises a mixture of rare earth oxides.
Claim 27
Dependent Claim
21 words
The composition of claim 20, wherein said stabilizer is selected from the group consisting of carbon, silicon carbide, and hafnium oxide.
Claim 28
Dependent Claim
18 words
The composition of claim 20, comprising in the range from 3 to 30% of said stabilizer by volume.
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