Patent US5726066A successfully refreshed from Google Patents.
US5726066A
Expired / Lapsed
US
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Method for manufacturing an infrared sensor array
Assignee: LG Electronics Inc
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Filing: 1996-02-13
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Granted: 1998-03-10
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Expires: 2016-02-13
Abstract
Abstract An infrared sensor array and manufacturing method thereof is disclosed including a substrate; a supporter having a space portion for adiabatic structure between the substrate and supporter; and a plurality of infrared sensors arranged with a predetermined distance each other on the supporter above the space portion.
Inventors
- 👤 Jun Rim Choi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 12:18
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/18; H10F39/184; H10F77/00; H10F77/10; H10F77/14; H10F77/147; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y10; Y10S; Y10S148/00; Y10S148/08
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
96 words
A method for manufacturing an infrared sensor array comprising the steps of: forming a sacrificial layer on a predetermined region of a substrate; forming a supporter of polycrystalline silicon to cover the sacrificial layer and the substrate on both sides of the sacrificial layer; forming numbers of infrared sensors arranged at a predetermined distance from each other on the supporter above the sacrificial layer; forming etching windows on the upper and lower and right and left side of said infrared sensors; and removing the sacrificial layer to form a space between the supporter and the substrate.
Claim 2
Independent Claim
96 words
A method for manufacturing an infrared sensor array comprising the steps of: forming a sacrificial layer on a predetermined region of a substrate; forming a supporter of polycrystalline silicon to cover the sacrificial layer and the substrate on both sides of the sacrificial layer; forming numbers of infrared sensors arranged at a predetermined distance from each other on the supporter above the sacrificial layer; forming etching windows on the upper and lower and right and left side of said infrared sensors; and removing the sacrificial layer to form a space between the supporter and the substrate.
Claim 3
Dependent Claim
40 words
The method for manufacturing an infrared sensor array as claimed in claim 1, wherein said sacrificial layer is formed by using materials having higher etching ratio to a predetermined impure solution than said substrate, said supporter and said infrared sensor.
Claim 4
Dependent Claim
24 words
The method for manufacturing an infrared sensor array as claimed in claim 2, wherein an insulating layer is used as for said sacrificial layer.
Claim 5
Dependent Claim
20 words
The method for manufacturing an infrared sensor array as claimed in claim 2, wherein the etching solution is hydrogenfluoride solution.
Claim 6
Dependent Claim
37 words
The method for manufacturing an infrared sensor array as claimed in claim 1, further comprising the step of ion implanting impurity into said polycrystalline silicon layer in case of using polycrystalline silicon layer as for said supporter.
Claim 7
Dependent Claim
24 words
The method for manufacturing an infrared sensor array as claimed in claim 1, wherein a silicon nitride layer is used as for said supporter.
Claim 8
Dependent Claim
38 words
The method for manufacturing an infrared sensor array as claimed in claim 6, further comprising the step of depositing platinum on the surface of said nitride layer in case of forming said nitride layer as for said supporter.
Claim 9
Dependent Claim
34 words
The method for manufacturing an infrared sensor array as claimed in claim 1, further comprising the step of forming an insulating layer for insulating said supporter and said infrared sensors after forming said supporter.
Claim 10
Dependent Claim
62 words
The method for manufacturing an infrared sensor array as claimed in claim 1, further comprising the step of forming at least one etching window by etching said supporter after forming said infrared sensors and before removing said sacrificial layer; wherein said etching window plays the role of easy penetration of the etching solution into said reporter to advantageously remove said sacrificial layer.
Claim 11
Dependent Claim
54 words
The method for manufacturing an infrared sensor array as claimed in claim 1, further comprising the step of forming at least one etching window by etching said supporter after forming said infrared sensors and before removing said sacrificial layer; wherein said etching window plays the role of shielding heat interference between neighboring infrared sensor.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-03-09 | 2001-09-08 | 2002-03-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-03-09 | 2005-09-08 | 2006-03-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-03-09 | 2009-09-08 | 2010-03-10 | $7700.00 | Window Closed / Lapsed |