Patent US5723889A successfully refreshed from Google Patents.
US5723889A
Expired / Lapsed
US
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Semiconductor memory device and method for fabricating the same
Assignee: SK Hynix Inc
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Filing: 1995-08-29
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Granted: 1998-03-03
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Expires: 2015-08-29
Abstract
Abstract A semiconductor memory device includes a semiconductor substrate, a first insulation film formed on the substrate, a trench formed in the substrate, an opening formed in the first insulation film above the trench, a capacitor including a dielectric film formed in the trench and a storage node formed in the trench on the dielectric film, a transfer transistor including a channel layer formed in the opening on the storage node, a gate insulation film formed on the channel layer, and a gate electrode formed on the gate insulation film, a second insulation film formed on the gate electrode, a conduction layer formed on the second insulation film, a third insulation film in contact with the channel layer, and a bit line in contact with the conduction layer.
Inventors
- 👤 Jong Mun Choi
- 👤 Chang Yeol Kim
- 👤 Woun-Suck Yang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:44
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; H10B12/39; H10B12/395; H10B12/01; H10B12/02; H10B12/03; H10B12/038; H10B12/0383
Claims Analysis
Total Claims: 35
Claim 1
Independent Claim
120 words
A semiconductor memory device comprising: a semiconductor substrate having a trench; a first insulation film on the substrate; the first insulation film having an opening above the trench; a capacitor including a dielectric film in the trench and a storage node in the trench on the dielectric film; a transfer transistor in the opening of the first insulation film including a channel layer on the storage node, a gate insulation film on the channel layer, and a gate electrode on the gate insulation film; a second insulation film on the gate electrode; a conduction layer on the second insulation film; a third insulation film in contact with the channel layer; and a bit line in contact with the conduction layer.
Claim 2
Dependent Claim
120 words
A semiconductor memory device comprising: a semiconductor substrate having a trench; a first insulation film on the substrate; the first insulation film having an opening above the trench; a capacitor including a dielectric film in the trench and a storage node in the trench on the dielectric film; a transfer transistor in the opening of the first insulation film including a channel layer on the storage node, a gate insulation film on the channel layer, and a gate electrode on the gate insulation film; a second insulation film on the gate electrode; a conduction layer on the second insulation film; a third insulation film in contact with the channel layer; and a bit line in contact with the conduction layer.
Claim 3
Dependent Claim
27 words
The device of claim 1, wherein the dielectric film of the capacitor is further formed in the opening and on an upper surface of the insulation film.
Claim 4
Dependent Claim
15 words
The device of claim 1, wherein the transfer transistor has a thin film transistor structure.
Claim 5
Dependent Claim
29 words
The device of claim 1, wherein in a portion of the channel layer is in contact with the conduction layer to form a source region of the transfer transistor.
Claim 6
Dependent Claim
28 words
The device of claim 1, wherein a portion of the channel layer is in contact with the storage node to form a drain region of the transfer transistor.
Claim 7
Dependent Claim
123 words
A semiconductor memory device comprising: a semiconductor substrate; a first insulation film on the substrate, the first insulation film having an opening; a capacitor in the opening in the first insulation film including a first capacitor electrode, a dielectric film on the first capacitor electrode, and a storage node on the dielectric film; a transfer transistor in the opening at the first insulation film including a channel layer on the storage node, a gate insulation film on the channel layer, and a gate electrode on the gate insulation film; a second insulation film on the gate electrode; a conduction layer and a third insulation film on the channel layer and the gate insulation film; and a bit-line in contact with the conduction layer.
Claim 8
Dependent Claim
123 words
A semiconductor memory device comprising: a semiconductor substrate; a first insulation film on the substrate, the first insulation film having an opening; a capacitor in the opening in the first insulation film including a first capacitor electrode, a dielectric film on the first capacitor electrode, and a storage node on the dielectric film; a transfer transistor in the opening at the first insulation film including a channel layer on the storage node, a gate insulation film on the channel layer, and a gate electrode on the gate insulation film; a second insulation film on the gate electrode; a conduction layer and a third insulation film on the channel layer and the gate insulation film; and a bit-line in contact with the conduction layer.
Claim 9
Dependent Claim
24 words
The device of claim 6, wherein the dielectric film of the capacitor is further formed on an upper surface of the first insulation film.
Claim 10
Dependent Claim
15 words
The device of claim 6, wherein the transfer transistor has a thin film transistor structure.
Claim 11
Dependent Claim
28 words
The device of claim 6, wherein a portion of the channel layer is in contact with the conduction layer to form a source region of the transfer transistor.
Claim 12
Dependent Claim
28 words
The device of claim 6, wherein a portion of the channel layer is in contact with the storage node to form a drain region of the transfer transistor.
Claim 13
Independent Claim
210 words
A method of fabricating a semiconductor memory device, the method comprising the steps of: forming a first insulation film on a semiconductor substrate; forming an opening in the first insulation film by selectively etching the first insulation film; forming a trench in the semiconductor substrate below the opening by etching the semiconductor substrate; forming a dielectric film in the trench and the opening and on the first insulation film; forming a storage node in the trench on the dielectric film; forming a channel layer on the dielectric film and the storage node; forming a gate insulation film on the channel layer; forming a gate electrode on the gate insulation film buried in the opening; forming a second insulation film on the gate electrode; etching the channel layer except in the vicinity of the opening; forming a conduction layer on the gate insulation film, the channel layer, and the second insulation film; patterning the conduction layer and the channel layer; forming a third insulation film on exposed portions of the dielectric film, the conduction layer, and the channel layer; selectively etching the third insulation film to expose a portion of the conduction layer; and forming a bit line on the third insulation film and contacting the portion of the conduction layer.
Claim 14
Independent Claim
210 words
A method of fabricating a semiconductor memory device, the method comprising the steps of: forming a first insulation film on a semiconductor substrate; forming an opening in the first insulation film by selectively etching the first insulation film; forming a trench in the semiconductor substrate below the opening by etching the semiconductor substrate; forming a dielectric film in the trench and the opening and on the first insulation film; forming a storage node in the trench on the dielectric film; forming a channel layer on the dielectric film and the storage node; forming a gate insulation film on the channel layer; forming a gate electrode on the gate insulation film buried in the opening; forming a second insulation film on the gate electrode; etching the channel layer except in the vicinity of the opening; forming a conduction layer on the gate insulation film, the channel layer, and the second insulation film; patterning the conduction layer and the channel layer; forming a third insulation film on exposed portions of the dielectric film, the conduction layer, and the channel layer; selectively etching the third insulation film to expose a portion of the conduction layer; and forming a bit line on the third insulation film and contacting the portion of the conduction layer.
Claim 15
Dependent Claim
56 words
The method of claim 11, wherein the step of forming the storage node includes the steps of forming a first conduction layer on the dielectric film so that the trench and the opening are filled with the first conduction layer and etching the first conduction layer back leaving the first conduction layer only in the trench.
Claim 16
Dependent Claim
17 words
The method of claim 12, wherein the first conduction layer is formed of deposited doped polycrystalline silicon.
Claim 17
Dependent Claim
14 words
The method of claim 11, wherein the channel layer is formed of deposited silicon.
Claim 18
Dependent Claim
45 words
The method of claim 11, wherein the step of forming the gate electrode includes the steps of depositing a second conduction layer on the gate insulation film so that the opening is filled with the second conduction layer and etching back the second conduction layer.
Claim 19
Dependent Claim
15 words
The method of claim 11, wherein the conduction layer is formed of doped polycrystalline silicon.
Claim 20
Dependent Claim
70 words
The method of claim 11, wherein a portion of the channel layer in contact with the conduction layer is doped with impurities from the conduction layer to form a self-aligned source region of a transfer transistor, and a portion of the channel layer in contact with a top of the storage node is doped with impurities from the storage node to form a self-aligned drain region of the transfer transistor.
Claim 21
Independent Claim
204 words
A method for fabricating a semiconductor memory device comprising the steps of: forming a first insulation film on a semiconductor substrate; forming an opening in the first insulation film by selectively etching the first insulation film; forming a first capacitor electrode at a lower portion of the opening; forming a dielectric film on the first insulation film, the first capacitor electrode and the semiconductor substrate, in the opening; forming a storage node in a portion of the opening covered with the dielectric film; forming a channel layer on the storage node and the dielectric film; forming a gate insulation film on the channel layer; forming a gate electrode on the gate insulation film buried in the opening; forming a second insulation film on the gate electrode; etching the channel layer except in the vicinity of the opening; forming a second conduction layer on the channel layer and the second insulation film; patterning the second conduction layer and the channel layer; forming a third insulation film on the exposed dielectric film; exposing a surface of the conductive layer by selectively etching the third insulation film; and forming a bit line on the third insulation film in contact with the exposed surface of the conduction layer.
Claim 22
Independent Claim
204 words
A method for fabricating a semiconductor memory device comprising the steps of: forming a first insulation film on a semiconductor substrate; forming an opening in the first insulation film by selectively etching the first insulation film; forming a first capacitor electrode at a lower portion of the opening; forming a dielectric film on the first insulation film, the first capacitor electrode and the semiconductor substrate, in the opening; forming a storage node in a portion of the opening covered with the dielectric film; forming a channel layer on the storage node and the dielectric film; forming a gate insulation film on the channel layer; forming a gate electrode on the gate insulation film buried in the opening; forming a second insulation film on the gate electrode; etching the channel layer except in the vicinity of the opening; forming a second conduction layer on the channel layer and the second insulation film; patterning the second conduction layer and the channel layer; forming a third insulation film on the exposed dielectric film; exposing a surface of the conductive layer by selectively etching the third insulation film; and forming a bit line on the third insulation film in contact with the exposed surface of the conduction layer.
Claim 23
Dependent Claim
51 words
The method of claim 18, wherein the step forming the first capacitor electrode includes the steps of forming a first conduction layer on the first insulation film including the opening and etching the first conduction layer back leaving the first conduction layer on sidewalls at the lower portion of the opening.
Claim 24
Dependent Claim
44 words
The method of claim 18, wherein the step of forming the storage node includes the steps of forming a first conduction layer on the dielectric film so that the first conduction layer is buried in the opening and etching back the first conduction layer.
Claim 25
Dependent Claim
17 words
The method of claim 20, wherein the first conduction layer is formed of deposited doped polycrystalline silicon.
Claim 26
Dependent Claim
14 words
The method of claim 18, wherein the channel layer is formed of deposited silicon.
Claim 27
Dependent Claim
45 words
The method of claim 18, wherein the step of forming the gate electrode includes the steps of depositing a second conduction layer on the gate insulation film so that the opening is filled with the second conduction layer and etching the second conduction layer back.
Claim 28
Dependent Claim
17 words
The method of claim 18, wherein the second conduction layer is formed of deposited doped polycrystalline silicon.
Claim 29
Dependent Claim
70 words
The method of claim 18, wherein a portion of the channel layer in contact with the conduction layer is doped with impurities from the conduction layer to form a self-aligned source region of a transfer transistor, and a portion of the channel layer in contact with a top of the storage node is doped with impurities from the storage node to form a self-aligned drain region of the transfer transistor.
Claim 30
Dependent Claim
96 words
A semiconductor device comprising: a semiconductor substrate; a recess in the semiconductor substrate; a first insulation film on the semiconductor substrate having an opening aligned with the recess; a dielectric film on exposed surfaces of the recess and the opening; a first conduction layer in the recess on the dielectric film; a semiconductor layer on side surfaces of the dielectric film in the opening and on the first conduction layer; and a third conduction layer on an upper surface of the second insulation film, the third conduction layer contacting an exposed portion of the semiconductor layer.
Claim 31
Dependent Claim
96 words
A semiconductor device comprising: a semiconductor substrate; a recess in the semiconductor substrate; a first insulation film on the semiconductor substrate having an opening aligned with the recess; a dielectric film on exposed surfaces of the recess and the opening; a first conduction layer in the recess on the dielectric film; a semiconductor layer on side surfaces of the dielectric film in the opening and on the first conduction layer; and a third conduction layer on an upper surface of the second insulation film, the third conduction layer contacting an exposed portion of the semiconductor layer.
Claim 32
Dependent Claim
120 words
A semiconductor device comprising: a semiconductor substrate; a first insulation film on the semiconductor substrate, the first insulation film having an opening; a first conduction layer on a lower surface portion of the opening; a dielectric film on a surface of the opening adjacent to the first conduction layer; a semiconductor layer on a side surface of the dielectric film and on the first conduction layer; a second insulation film on the semiconductor layer in the opening; a second conduction layer in the opening, the second conduction layer surrounded by the second insulation film on the semiconductor layer; and a third conduction layer on the second insulation film, the third conduction layer contacting an exposed portion of the semiconductor layer.
Claim 33
Dependent Claim
120 words
A semiconductor device comprising: a semiconductor substrate; a first insulation film on the semiconductor substrate, the first insulation film having an opening; a first conduction layer on a lower surface portion of the opening; a dielectric film on a surface of the opening adjacent to the first conduction layer; a semiconductor layer on a side surface of the dielectric film and on the first conduction layer; a second insulation film on the semiconductor layer in the opening; a second conduction layer in the opening, the second conduction layer surrounded by the second insulation film on the semiconductor layer; and a third conduction layer on the second insulation film, the third conduction layer contacting an exposed portion of the semiconductor layer.
Claim 34
Independent Claim
159 words
A method of fabricating a semiconductor memory device, the method comprising the steps of: forming a first insulation film on a semiconductor substrate; forming an opening through the first insulation film by selectively etching the first insulation film; forming a recess in the semiconductor substrate by etching the semiconductor substrate, the recess being aligned with the opening; forming a dielectric film on the recess and on an exposed surface of the first insulation film; forming a storage node on the dielectric film in the recess; forming a channel layer on the dielectric film in the opening and on the storage node; forming a gate insulation film on the channel layer; forming a gate electrode on the gate insulation film in the opening; forming a second insulation film on the gate electrode to be in contact with the gate insulation film; and forming a conduction layer on the second insulation film and on an exposed portion of the channel layer.
Claim 35
Independent Claim
159 words
A method of fabricating a semiconductor memory device, the method comprising the steps of: forming a first insulation film on a semiconductor substrate; forming an opening through the first insulation film by selectively etching the first insulation film; forming a recess in the semiconductor substrate by etching the semiconductor substrate, the recess being aligned with the opening; forming a dielectric film on the recess and on an exposed surface of the first insulation film; forming a storage node on the dielectric film in the recess; forming a channel layer on the dielectric film in the opening and on the storage node; forming a gate insulation film on the channel layer; forming a gate electrode on the gate insulation film in the opening; forming a second insulation film on the gate electrode to be in contact with the gate insulation film; and forming a conduction layer on the second insulation film and on an exposed portion of the channel layer.
References Cited (Backward Citations)
US5214296A
Cited
US5336917A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2001-03-02 | 2001-09-01 | 2002-03-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-03-02 | 2005-09-01 | 2006-03-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-03-02 | 2009-09-01 | 2010-03-03 | $7700.00 | Window Closed / Lapsed |