US5214296A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thin-film semiconductor device and method of fabricating the same
Assignee: Panasonic Holdings Corp
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Filing: 1992-03-10
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Granted: 1993-05-25
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Expires: 2012-03-10
Abstract
Abstract A thin-film semiconductor device having a vertical TFT which includes a gate insulating film formed on a sidewall of a throughhole formed in an insulating layer; a thin-film semiconductor layer formed on the gate insulating film; and a gate electrode formed within the insulating layer. The gate electrode, the gate insulating film, and the thin-film semiconductor layer together form a lateral MOS structure. The thin-film semiconductor layer is connected to a bit line at the bottom of the throughhole and to a storage node of a capacitor formed over the switching transistor.
Inventors
- 👤 Yoshiro Nakata
- 👤 Naoto Matsuo
- 👤 Toshiki Yabu
- 👤 Susumu Matsumoto
- 👤 Shozo Okada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:29
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6728; H10B; H10B12/00; H10B12/30; H10B12/31; H10B12/318
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
152 words
A thin-film semiconductor device having a plurality of switching transistors, said thin-film semiconductor device comprising: a first insulating layer; a first conductive layer formed on said first insulating layer; a second insulating layer formed on said first insulating layer so as to cover said first conductive layer; a third insulating layer formed on said second insulating layer; a plurality of throughholes formed in said second and third insulating layers, each of said throughholes reaching said first conductive layer; and a second conductive layer formed on said third insulating layer, each of said switching transistors comprising: a gate insulating film formed on a sidewall of each of said throughholes; a thin-film semiconductor channel layer formed on said gate insulating film, said thin-film semiconductor channel layer interconnecting said first conductive layer to said second conductive layer; and a gate electrode formed on said second insulating layer, said gate electrode surrounding said gate insulating film.
Claim 2
Dependent Claim
152 words
A thin-film semiconductor device having a plurality of switching transistors, said thin-film semiconductor device comprising: a first insulating layer; a first conductive layer formed on said first insulating layer; a second insulating layer formed on said first insulating layer so as to cover said first conductive layer; a third insulating layer formed on said second insulating layer; a plurality of throughholes formed in said second and third insulating layers, each of said throughholes reaching said first conductive layer; and a second conductive layer formed on said third insulating layer, each of said switching transistors comprising: a gate insulating film formed on a sidewall of each of said throughholes; a thin-film semiconductor channel layer formed on said gate insulating film, said thin-film semiconductor channel layer interconnecting said first conductive layer to said second conductive layer; and a gate electrode formed on said second insulating layer, said gate electrode surrounding said gate insulating film.
Claim 3
Dependent Claim
27 words
A thin-film semiconductor device according to claim 1, wherein both said thin-film semiconductor channel layer and said second conductive layer are made of a polycrystalline silicon film.
Claim 4
Dependent Claim
53 words
A thin-film semiconductor device according to claim 1, wherein said device is a semiconductor memory device having a plurality of memory cells, each of said memory cells comprising one of said switching transistors and a storage capacitor, said storage capacitor comprising a storage node which includes a portion of said second conductive layer.
Claim 5
Dependent Claim
32 words
A thin-film semiconductor device according to claim 3, wherein said device comprises a plurality of bit lines for charging said storage node, said bit lines being made of said first conductive layer.
Claim 6
Dependent Claim
163 words
A thin-film semiconductor device having a switching transistor, said thin-film semiconductor device comprising: a semiconductor substrate; a first insulating layer formed on said semiconductor substrate; a second insulating layer formed on said first insulating layer; a plurality of throughholes formed in said first and second insulating layers, each of said throughholes reaching an inner portion of said semiconductor substrate; a third insulating film formed on said second insulating film and a side wall of each of said throughholes; and a conductive layer formed on said third insulating film; said switching transistor comprising: a gate insulating film formed on said side-wall of each of said throughholes, said gate insulating film being made of a portion of said third insulating film; a thin-film semiconductor channel layer formed on said gate insulating film, said thin-film semiconductor channel layer being made of a first portion of said conductive layer; and a gate electrode formed on said first insulating layer, said gate electrode surrounding said gate insulating film.
Claim 7
Dependent Claim
163 words
A thin-film semiconductor device having a switching transistor, said thin-film semiconductor device comprising: a semiconductor substrate; a first insulating layer formed on said semiconductor substrate; a second insulating layer formed on said first insulating layer; a plurality of throughholes formed in said first and second insulating layers, each of said throughholes reaching an inner portion of said semiconductor substrate; a third insulating film formed on said second insulating film and a side wall of each of said throughholes; and a conductive layer formed on said third insulating film; said switching transistor comprising: a gate insulating film formed on said side-wall of each of said throughholes, said gate insulating film being made of a portion of said third insulating film; a thin-film semiconductor channel layer formed on said gate insulating film, said thin-film semiconductor channel layer being made of a first portion of said conductive layer; and a gate electrode formed on said first insulating layer, said gate electrode surrounding said gate insulating film.
Claim 8
Dependent Claim
26 words
A thin-film semiconductor device according to claim 5, wherein both said thin-film semiconductor channel layer and said conductive layer are made of a polycrystalline silicon film.
Claim 9
Dependent Claim
65 words
A thin-film semiconductor device according to claim 5, wherein said device is a semiconductor memory device having a plurality of memory cells, each of said memory cells comprising one of said switching transistors and a storage capacitor, said storage capacitor comprising a storage node which is a second portion of said conductive layer, said second portion being at said inner portion of said semiconductor substrate.
Claim 10
Dependent Claim
35 words
A thin-film semiconductor device according to claim 7, wherein said device comprises a plurality of bit lines for charging said storage node, said bit lines being made of a third portion of said conductive layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1996-05-24 | 1996-11-23 | 1997-05-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-05-24 | 2000-11-23 | 2001-05-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-05-24 | 2004-11-23 | 2005-05-25 | $7700.00 | Window Closed / Lapsed |