← Back to Patent Explorer
US5719447A Expired / Lapsed US ⏱️ 0.0 years remaining

Metal alloy interconnections for integrated circuits

Assignee: Intel Corp
•
Filing: 1995-05-30
•
Granted: 1998-02-17
•
Expires: 2015-05-30
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract Novel metal-alloy interconnections for integrated circuits. The metal-alloy interconnections of the present invention comprise a substantial portion of either copper or silver alloyed with a small amount of an additive having a low residual resistivity and solid solubility in either silver or copper such that the resultant electrical resistivity is less than 3 μΩ-cm.

Inventors

  • 👤 Donald S. Gardner

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-30 03:55
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4421; H10W20/4424; H10W20/425; H10W20/4432; H10W20/4435

Claims Analysis

Total Claims: 13
Claim 1
Independent Claim 38 words
A metal alloy interconnection for an integrated circuit comprising: silver; and an additive having a low residual resistivity and a low solid solubility in silver wherein said metal alloy interconnection comprises between 0.01-1.0 atomic percent of said additive.
Claim 2
Dependent Claim 38 words
A metal alloy interconnection for an integrated circuit comprising: silver; and an additive having a low residual resistivity and a low solid solubility in silver wherein said metal alloy interconnection comprises between 0.01-1.0 atomic percent of said additive.
Claim 3
Dependent Claim 21 words
The metal alloy interconnection of claim 1 wherein said additive is selected from the group consisting of niobium, palladium, and vanadium.
Claim 4
Dependent Claim 17 words
The metal alloy interconnection of claim 1 wherein said metal alloy comprises between 0.01-1.0 atomic percent niobium.
Claim 5
Dependent Claim 17 words
The metal alloy interconnection of claim 1 wherein said metal alloy comprises between 0.01-1.0 atomic percent palladium.
Claim 6
Dependent Claim 17 words
The metal alloy interconnection of claim 1 wherein said metal alloy comprises between 0.01-1.0 atomic percent vanadium.
Claim 7
Independent Claim 77 words
A method of forming interconnection lines for an integrated circuit formed on a semiconductor substrate comprising the steps of: forming an insulating layer above said substrate; forming a silver-alloy layer above said insulating layer wherein said silver-alloy layer comprises: silver; and an additive having a low residual resistivity and a low solid solubility in silver wherein said metal alloy layer comprises between 0.01-1.0 atomic percent of said additive; and patterning said silver-alloy layer into said interconnection lines.
Claim 8
Independent Claim 77 words
A method of forming interconnection lines for an integrated circuit formed on a semiconductor substrate comprising the steps of: forming an insulating layer above said substrate; forming a silver-alloy layer above said insulating layer wherein said silver-alloy layer comprises: silver; and an additive having a low residual resistivity and a low solid solubility in silver wherein said metal alloy layer comprises between 0.01-1.0 atomic percent of said additive; and patterning said silver-alloy layer into said interconnection lines.
Claim 9
Dependent Claim 19 words
The method of claim 6 wherein said additive is selected from the group consisting of niobium, palladium, and vanadium.
Claim 10
Dependent Claim 15 words
The method of claim 6 wherein said silver-alloy layer comprises between 0.01-1.0 atomic percent niobium.
Claim 11
Dependent Claim 15 words
The method of claim 6 wherein said silver-alloy layer comprises between 0.01-1.0 atomic percent palladium.
Claim 12
Dependent Claim 14 words
The method of claim 6 wherein said silver-alloy layer comprises 0.01-1.0 atomic percent vanadium.
Claim 13
Dependent Claim 21 words
The method of claim 6 wherein said silver-alloy layer is formed by sputtering from a target comprising silver and said additive.

References Cited (Backward Citations)

US4027326A Cited
US4198248A Cited
US4666667A Cited
US4872048A Cited
JPS62235749A Cited
US4985750A Cited
US5060050A Cited
US5365110A Cited
US5177588A Cited
JPH0547760A Cited
US5306465A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2001-02-16 2001-08-18 2002-02-17 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2005-02-16 2005-08-18 2006-02-17 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2009-02-16 2009-08-18 2010-02-17 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag