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Patent US5714790A successfully refreshed from Google Patents.
US5714790A
Expired / Lapsed
US
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Semiconductor device with an indium-tin-oxide in contact with a semiconductor or metal
Assignee: Canon Inc
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Filing: 1996-04-17
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Granted: 1998-02-03
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Expires: 2016-04-17
Abstract
Abstract A semiconductor device has an ITO film which is in contact with a semiconductor or a metal, the ITO film having an insulating film with SiN as the main constituent provided on or under at least a portion of the ITO film.
Inventors
- 👤 Masaru Sakamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:12
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/83; H10D64/00; H10D64/60; H10D64/62; H10F; H10F77/00; H10F77/20; H10F77/244; H10F77/247
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
70 words
A semiconductor device comprising a first insulating film 300 Å to 2 μm in thickness consisting essentially of silicon nitride in contact with a first surface of an indium-tin-oxide film; a second insulating film on a second surface of said indium-tin-oxide film opposite to that of said first insulating film, where said first insulating film is in contact with a silicon oxide thin film parallel to said first insulating film.
Claim 2
Dependent Claim
70 words
A semiconductor device comprising a first insulating film 300 Å to 2 μm in thickness consisting essentially of silicon nitride in contact with a first surface of an indium-tin-oxide film; a second insulating film on a second surface of said indium-tin-oxide film opposite to that of said first insulating film, where said first insulating film is in contact with a silicon oxide thin film parallel to said first insulating film.
Claim 3
Dependent Claim
36 words
A semiconductor device according to claim 1, wherein said second film having a dielectric constant equal to or greater than that of silicon nitride is disposed on at least a portion of said first insulating film.
Claim 4
Dependent Claim
65 words
A semiconductor device according to claim 2, wherein the film having a dielectric constant equal to or greater than that of silicon nitride is selected from a group of oxides consisting of Ta 2 O 5 , TiO 2 , Al 2 O 3 , PbTiO 3 , PZT (composite oxide of Pb, Zr and Ti), and KTN (composite oxide of K, Ta and Nb).
Claim 5
Dependent Claim
17 words
A semiconductor device according to claim 1, wherein said second insulating film consists essentially of silicon nitride.
Claim 6
Dependent Claim
54 words
A semiconductor device comprising an indium-tin-oxide film, wherein a surface of said indium-tin-oxide film is in contact with a surface of a silicon nitride film 300 Å to 2 μm in thickness, and another surface of said silicon nitride film is in contact with a silicon oxide film parallel to said silicon nitride film.
Claim 7
Dependent Claim
54 words
A semiconductor device comprising an indium-tin-oxide film, wherein a surface of said indium-tin-oxide film is in contact with a surface of a silicon nitride film 300 Å to 2 μm in thickness, and another surface of said silicon nitride film is in contact with a silicon oxide film parallel to said silicon nitride film.
Claim 8
Dependent Claim
20 words
A semiconductor device according to claim 5, wherein an insulating film is disposed on another surface of said indium-tin-oxide film.
Claim 9
Dependent Claim
14 words
A semiconductor device according to claim 6, wherein said insulating film comprises silicon nitride.
Claim 10
Dependent Claim
27 words
A semiconductor device according to claim 6, wherein said insulating film is selected from SiO 2 , polyimide, TaO 2 , phospho-silicate glass or arsenic silicate glass.
Claim 11
Dependent Claim
12 words
A liquid-crystal display device according to the semiconductor device of claim 5.
Claim 12
Dependent Claim
12 words
A photoelectric converting device according to the semiconductor device of claim 5.
References Cited (Backward Citations)
JPS5776525A
Cited
JPS6199121A
Cited
WO1989003593A1
Cited
US5341012A
Cited
US5341012B1
Cited
US4990460A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-02-02 | 2001-08-04 | 2002-02-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-02-02 | 2005-08-04 | 2006-02-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-02-02 | 2009-08-04 | 2010-02-03 | $7700.00 | Window Closed / Lapsed |