US5710070A
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Application of titanium nitride and tungsten nitride thin film resistor for thermal ink jet technology
Assignee: GlobalFoundries Singapore Pte Ltd
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Filing: 1996-11-08
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Granted: 1998-01-20
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Expires: 2016-11-08
Abstract
Abstract The present invention provides a structure and a method of manufacturing a resistor in a semiconductor device and especially for a resistor in an ink jet print head. The method begins by providing a substrate 10 having a field oxide region 20 surrounding an active area. The field oxide region 20 has an ink well region 52. Also a transistor is provided in the active area. The transistor comprises a source 12, drain 14 and gate electrode 16 18 19. A dielectric layer 24 is formed over the field oxide region 20 and the transistor 12 14 16 18. The dielectric layer 24 has contact openings over the source 12 and drain 14. A resistive layer 26 27 is formed over the dielectric layer 24 and contacting the source 12 and drain 14. The resistive layer 26 27 is preferably comprised of two layers of: a Titanium layer 26 under a titanium nitride 27 or a titanium layer 26 under a tungsten nitride layer 27. A first metal layer 28 is formed over the resistive layer. The metal layer 28 is patterned forming an first opening 29 over a portion of the resistive layer 28 over the ink well region 52. The resistive layer and first metal layer are patterned forming a second opening 31 over the gate electrode 16 18 and forming the resistive layer and first metal layer into an interconnect layer. A passivation layer 30 is then formed over the first metal layer 28, the resistive layer 26 27 in the ink well region 52, and the gate electrode 16 18.
Inventors
- 👤 Lap Chan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 05:15
CPC Classifications
B; B41; B41J; B41J2/00; B41J2/005; B41J2/01; B41J2/135; B41J2/16; B41J2/1621; B41J2/164; B41J2/1646; B41J2/14; B41J2/14016; B41J2/14072; B41J2/14088; B41J2/14112; B41J2/14129; B41J2/1601; B41J2/1603; B41J2/1626; B41J2/1628; B41J2/1629; B41J2/1631; B41J2/1642; B41J2202/00; B41J2202/01; B41J2202/03; B41J2202/13
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
196 words
A method of fabricating a resistor in a semiconductor device comprising: a) providing a substrate having a field oxide region surrounding an active area; said field oxide region having an ink well region, and providing a transistor in said active area, said transistor comprising a source, drain and gate electrode; b) forming a dielectric layer over said field oxide region and said transistor, said dielectric layer having contact openings over said source and drain; c) forming a resistive layer over said dielectric layer and contacting said source and drain, said resistive layer comprised of two layers of material selected from the group consisting of titanium/titanium nitride and titanium/tungsten nitride; d) forming a first metal layer over said resistive layer; e) patterning said first metal layer forming an first opening over a portion of said resistive layer over said ink well region; f) patterning said first metal layer and said resistive layer forming a second opening over said gate electrode and patterning said first metal layer and said resistive layer forming a first interconnect layer; g) forming a passivation layer over said first metal layer, said resistive layer in said ink well region and said gate electrode.
Claim 2
Independent Claim
196 words
A method of fabricating a resistor in a semiconductor device comprising: a) providing a substrate having a field oxide region surrounding an active area; said field oxide region having an ink well region, and providing a transistor in said active area, said transistor comprising a source, drain and gate electrode; b) forming a dielectric layer over said field oxide region and said transistor, said dielectric layer having contact openings over said source and drain; c) forming a resistive layer over said dielectric layer and contacting said source and drain, said resistive layer comprised of two layers of material selected from the group consisting of titanium/titanium nitride and titanium/tungsten nitride; d) forming a first metal layer over said resistive layer; e) patterning said first metal layer forming an first opening over a portion of said resistive layer over said ink well region; f) patterning said first metal layer and said resistive layer forming a second opening over said gate electrode and patterning said first metal layer and said resistive layer forming a first interconnect layer; g) forming a passivation layer over said first metal layer, said resistive layer in said ink well region and said gate electrode.
Claim 3
Dependent Claim
71 words
The method of claim 1 which further includes: forming a second metal layer over said passivation layer in said ink well region; forming a film over said substrate, said film having an opening over said ink well region thereby forming an ink well, said ink well exposing said second metal layer; and forming a nozzle plate over said film, said nozzle plate having an orifice in communication with said ink well.
Claim 4
Dependent Claim
39 words
The method of claim 1 wherein said dielectric layer is composed of a material selected from the group consisting of phosphosilicate glass and borophosphosilicate glass, and has a thickness in a range of between about 5000 and 15,000 Å.
Claim 5
Dependent Claim
75 words
The method of claim 1 wherein said resistive layer is composed of two layers of a Titanium layer under a titanium nitride layer and said titanium nitride is formed by deposited via chemical vapor deposition by pyrolyzing a TiCl 4 with NH 3 , and said titanium layer having a thickness in a range of between about 200 and 600 Å, and said titanium nitride layer having a thickness between about 400 and 2000 Å.
Claim 6
Dependent Claim
86 words
The method of claim 1 wherein said resistive layer is composed of a Titanium layer under a titanium nitride layer and said titanium nitride layer is deposited via a chemical vapor deposition by pyrolyzing a nitrogen source and an organometalic precursor compound of the formula Ti(NR 2 ) 4 wherein R is an alkyl group, and said titanium layer having a thickness in a range of between about 200 and 600 Å and said titanium nitride layer having a thickness between about 400 and 2000 Å.
Claim 7
Dependent Claim
189 words
The method of claim 1 wherein said resistive layer is composed of a Titanium layer under a titanium nitride layer and said titanium nitride layer is deposited via a chemical vapor deposition by pyrolyzing Ti N(C 2 H 5 )! 4 with NH 3 at a temperature in a range of between about 200 and 600° C., at a Pressure in a range of between about 1 and 100 torr using Reactant gases of Ti N(C 2 H 5 ) 2 ! 4 at a flow rate in a range of between about of 10 and 200 sccm, and a Ratio of Reactant gasses between NH 3 and Ti N(C 2 H 5 ) 2 ! 4 of between about 2:1 and 1:10, and a Carrier Gas flow of Argon at a rate in a range of between 1 and 50 sccm, said resistive layer having a resistivity in a range of between about 50 and 800 μohm-cm, and said titanium layer having a thickness in a range of between about 200 and 600 Å and said titanium nitride layer having a thickness between about 400 and 2000 Å.
Claim 8
Dependent Claim
140 words
The method of claim 1 wherein said resistive layer is composed of a Titanium layer under a titanium nitride layer and said titanium nitride layer is deposited via a chemical vapor deposition by pyrolyzing Ti (N(CH 3 ) 2 ! 4 at a temperature in a range of between about 200-°600° C., at a Pressure in a range of between about 0.1 and 20 torr, a N 2 Carrier Gas flow: in a range of between 150 and 500 sccm, a He carrier Gas flow in a range of between about 100 and 300 sccm, and said resistive layer subjected to a H 2 /N 2 plasma treatment at a RF power in a range of between about 50 and 500 RF watts, and said resistive layer having a resistivity in a range of between about 50 and 1000 μohm-cm.
Claim 9
Dependent Claim
164 words
The method of claim 1 wherein said resistive layer is composed of a Ti layer under a tungsten nitride layer, said Tungsten nitride layer formed by a chemical vapor deposition process at a temperature in a range of between about 100 and 600° C., at a pressure in a range of between about 0.1 and 100 torr, with Reactant gasses comprising WF 6 /NH 3 /H2, and the ratio of flow rates of the Reactant gasses is in a range of between about 1:5 and 5:1 (NH 3 : WF 6 ), a Carrier Gas of a gas selected from the group consisting of He and N 2 , and a H 2 /N 2 plasma treatment performed at a RF watt of between about 50 and 500 watts, and said Ti layer having a thickness in a range of between about 200 and 600 Å and said tungsten nitride layer having a thickness in a range of between about 400 and 2000 Å.
Claim 10
Dependent Claim
40 words
The method of claim 2 wherein said second metal layer is formed of aluminum with a Cu % in the range between about 0.5 to 4.0%, and has a thickness in a range of between about 5000 and 15,000 Å.
Claim 11
Dependent Claim
22 words
The method of claim 1 wherein said resistive layer has a resistance in a range of between about 20 and 50 ohm/sq.
Claim 12
Dependent Claim
48 words
The method of claim 1 wherein said passivation layer is composed of a material selected from the group consisting of: silicon oxide, silicon nitride, silicon oxynitride and a two layer silicon oxide/silicon nitride stack, and has a thickness in a range of between about 5000 and 20,000 Å.
Claim 13
Dependent Claim
28 words
The method of claim 2 wherein said second metal layer is composed of tantalum and has a thickness in a range of between about 5000 and 20,000 Å.
Claim 14
Independent Claim
303 words
A method of fabricating an ink jet printhead having a resistor comprising: a) providing a substrate having a field oxide region surrounding an active area; said field oxide region have an ink well region, and providing a transistor in said active area, said transistor comprising a source, drain and gate electrode; b) forming a dielectric layer composed of phosphosilicate glass over said field oxide region and said transistor, said dielectric layer having contact openings over said source and drain; c) forming a resistive layer over said dielectric layer and contacting said source and drain, said resistive layer comprised of a two layer structure selected from the group consisting of: Titanium/titanium nitride and titanium/tungsten nitride; d) forming a first metal layer over said resistive layer; said first metal layer composed of aluminum; e) patterning said first metal layer forming an first opening over a portion of said resistive layer over said ink well region; f) patterning said first metal layer and said resistive layer forming a second opening over said gate electrode and patterning said first metal layer and said resistive layer forming a first interconnect layer; g) forming a passivation layer over said first metal layer, said resistive layer in said ink well region and said gate electrode; said passivation layer composed of a material selected from the group consisting of silicon oxide, silicon nitride and silicon oxynitride; h) forming a second metal layer composed of tantalum over said passivation layer in said ink well region; i) forming a film comprising silicon oxide over said substrate, said film having an opening over said ink well region thereby forming an ink well, said ink well exposing said second metal layer; j) forming a nozzle plate over said film, said nozzle plate comprised of silicon carbide having an orifice in communication with said ink well.
Claim 15
Independent Claim
303 words
A method of fabricating an ink jet printhead having a resistor comprising: a) providing a substrate having a field oxide region surrounding an active area; said field oxide region have an ink well region, and providing a transistor in said active area, said transistor comprising a source, drain and gate electrode; b) forming a dielectric layer composed of phosphosilicate glass over said field oxide region and said transistor, said dielectric layer having contact openings over said source and drain; c) forming a resistive layer over said dielectric layer and contacting said source and drain, said resistive layer comprised of a two layer structure selected from the group consisting of: Titanium/titanium nitride and titanium/tungsten nitride; d) forming a first metal layer over said resistive layer; said first metal layer composed of aluminum; e) patterning said first metal layer forming an first opening over a portion of said resistive layer over said ink well region; f) patterning said first metal layer and said resistive layer forming a second opening over said gate electrode and patterning said first metal layer and said resistive layer forming a first interconnect layer; g) forming a passivation layer over said first metal layer, said resistive layer in said ink well region and said gate electrode; said passivation layer composed of a material selected from the group consisting of silicon oxide, silicon nitride and silicon oxynitride; h) forming a second metal layer composed of tantalum over said passivation layer in said ink well region; i) forming a film comprising silicon oxide over said substrate, said film having an opening over said ink well region thereby forming an ink well, said ink well exposing said second metal layer; j) forming a nozzle plate over said film, said nozzle plate comprised of silicon carbide having an orifice in communication with said ink well.
Claim 16
Dependent Claim
22 words
The method of claim 13 wherein said dielectric layer has a thickness in a range of between about 5000 and 15,000 Å.
Claim 17
Dependent Claim
72 words
The method of claim 13 wherein said resistive layer is composed of two layers of a Titanium layer under a titanium nitride layer and is formed by deposited via chemical vapor deposition by pyrolyzing a TiCl 4 with NH 3 , and said titanium layer having a thickness in a range of between about 200 and 600 Å, and said titanium nitride layer having a thickness between about 400 and 2000 Å.
Claim 18
Dependent Claim
83 words
The method of claim 13 wherein said resistive layer is composed of a Titanium layer under a titanium nitride layer and is formed by deposited via chemical vapor deposition by pyrolyzing a nitrogen source and an organometalic precursor compound of the formula Ti(NR 2 ) 4 wherein R is an alkyl group, and said titanium layer having a thickness in a range of between about 200 and 600 Å and said titanium nitride layer having a thickness between about 400 and 2000 Å.
Claim 19
Dependent Claim
53 words
The method of claim 13 wherein said resistive layer is composed of a Ti layer under a tungsten nitride layer, and said Ti layer having a thickness in a range of between about 200 and 600 Å and said tungsten nitride layer thickness in a range of between about 400 and 2000 Å.
Claim 20
Dependent Claim
22 words
The method of claim 13 wherein said resistive layer has a resistance in a range of between about 20 and 50 ohm/sq.
Claim 21
Dependent Claim
48 words
The method of claim 13 wherein said passivation layer is composed of a material selected from the group consisting of: silicon oxide, silicon nitride, silicon oxynitride and a two layer silicon oxide/silicon nitride stack, and has a thickness in a range of between about 5000 and 20,000 Å.
Claim 22
Dependent Claim
28 words
The method of claim 13 wherein said second metal layer is composed of tantalum and has a thickness in a range of between about 5000 and 20,000 Å.
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