Abstract A P-channel MOS memory cell has P+ source and drain regions formed in an N-well. A thin tunnel oxide is provided between the well surface and an overlying floating gate. In one embodiment, the thin tunnel oxide extends over a substantial portion of the active region and the device. An overlying select and control gate is insulated from the floating gate by an insulating layer. The select and control gate including an elongated extension portion for preventing overprogramming of the circuit. The device is programmed via hot electron injection from the drain end of the channel region to the floating gate, without avalanche breakdown, which allows the cell to be bit-selectable during programming. Erasing is accomplished by electron tunneling from the floating gate to the N-well with the source, drain, and N-well regions equally biased. Since there is no high drain/well junction bias voltage, the channel length of the cell may be reduced without incurring and destructive junction stress.
A semiconductor memory cell comprising: an N-type well region having formed therein a P+ source, a P+ drain, and a channel region extending between said P+ source and said P+ drain; a first insulating layer overlying said well region; a floating gate overlying said first insulating layer; a second insulating layer overlying said floating gate; and a select and control gate overlying said second insulating layer, the select and control gate including an elongated portion which extends over a portion of the source preventing overprogramming of the cell, wherein during programming of said cell holes are accelerated across said channel region and collide with electrons in a depletion region of said drain to result in the generation of hot electrons via impact ionization, said hot electrons being injected into said floating gate of said cell and thereby negatively charging said floating gate, said cell being programmed by applying between approximately 5 and 15 volts to said P+ source and to said N-type well region, grounding said P+ drain, and applying a program voltage which ramps from approximately 0 volts to as high as approximately 15 volts to said select and control gate.
Claim 2
Dependent Claim
192 words
A semiconductor memory cell comprising: an N-type well region having formed therein a P+ source, a P+ drain, and a channel region extending between said P+ source and said P+ drain; a first insulating layer overlying said well region; a floating gate overlying said first insulating layer; a second insulating layer overlying said floating gate; and a select and control gate overlying said second insulating layer, the select and control gate including an elongated portion which extends over a portion of the source preventing overprogramming of the cell, wherein during programming of said cell holes are accelerated across said channel region and collide with electrons in a depletion region of said drain to result in the generation of hot electrons via impact ionization, said hot electrons being injected into said floating gate of said cell and thereby negatively charging said floating gate, said cell being programmed by applying between approximately 5 and 15 volts to said P+ source and to said N-type well region, grounding said P+ drain, and applying a program voltage which ramps from approximately 0 volts to as high as approximately 15 volts to said select and control gate.
Claim 3
Dependent Claim
26 words
The structure of claim 1 wherein said cell is erased by electrons tunneling from said floating gate to said channel region, said source, and said drain.
Claim 4
Dependent Claim
25 words
The structure of claim 1 wherein threshold voltage of the cell of claim 1 is adjusted by implanting said channel region with phosphorus or arsenic.