US5703403A
Expired / Lapsed
US
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Electrode for semiconductor device and method for producing the same
Assignee: Denso Corp
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Filing: 1996-11-21
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Granted: 1997-12-30
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Expires: 2016-11-21
Abstract
Abstract An electrode for semiconductor devices, which can restrain the occurrence of Al voids and has a high barrier effect, is obtained by inserting a material which has a close resemblance in crystal structure to the barrier layer of a contact part and the aluminum alloy with the crystal surface thereof being oriented mainly at the (111) plane into the interface between the above barrier layer and the aluminum alloy. A semiconductor device according to the present invention comprises a silicon substrate, an interlayer insulating film partially formed on the silicon substrate, a titanium silicide layer formed on the silicon substrate at the part where the interlayer insulating film is not formed, a titanium layer formed on the interlayer insulating film and connected to the titanium silicide layer, a titanium nitride layer formed on the titanium layer and the titanium silicide layer, a Ti-Al-N layer such as Ti3AlN and formed on the titanium nitride layer, and an aluminum alloy (Al-1%Si-0.5%Cu) composing an electrode formed on the Ti-Al-N layer.
Inventors
- 👤 Susumu Sobue
- 👤 Takeshi Yamauchi
- 👤 Shinichi Mukainakano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 20:06
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10D; H10D62/00; H10D62/80; H10D62/83; H10D64/00; H10D64/60; H10D64/62
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
156 words
An electrode for a semiconductor device comprising: a barrier layer disposed on a substrate and composed of an intermetallic compound containing a metal with a high melting point and nitrogen (N); a nitride layer disposed on said barrier layer and defined by an intermetallic compound containing an element making up said barrier layer and aluminum (Al) as components thereof, said nitride layer having a thickness of at least 30 Å; and an aluminum alloy wiring disposed on said nitride layer such that a crystal surface thereof is oriented mainly at the (111) plane, wherein: an oxygen concentration in said barrier layer is no greater than 1 at %; an oxygen concentration at an interface between said barrier layer and said nitride layer is no greater than 1 at %; and a margin of difference between an interatomic distance of said nitride layer and an interatomic distance of said aluminum alloy wiring is no greater than 5%.
Claim 2
Dependent Claim
156 words
An electrode for a semiconductor device comprising: a barrier layer disposed on a substrate and composed of an intermetallic compound containing a metal with a high melting point and nitrogen (N); a nitride layer disposed on said barrier layer and defined by an intermetallic compound containing an element making up said barrier layer and aluminum (Al) as components thereof, said nitride layer having a thickness of at least 30 Å; and an aluminum alloy wiring disposed on said nitride layer such that a crystal surface thereof is oriented mainly at the (111) plane, wherein: an oxygen concentration in said barrier layer is no greater than 1 at %; an oxygen concentration at an interface between said barrier layer and said nitride layer is no greater than 1 at %; and a margin of difference between an interatomic distance of said nitride layer and an interatomic distance of said aluminum alloy wiring is no greater than 5%.
Claim 3
Dependent Claim
40 words
The electrode for a semiconductor device according to claim 1, wherein said substrate is composed of a silicon (Si) substrate; said barrier layer is composed of titanium nitride (TiN); and said nitride layer is composed of Ti 3 AlN mainly.
Claim 4
Dependent Claim
87 words
The electrode for a semiconductor device according to claim 1, wherein said barrier layer contains no oxygen or said oxygen concentration is no greater than 1 at %; said aluminum alloy wiring is disposed on said barrier layer such that said aluminum alloy wiring contains no oxygen or an oxygen concentration of said aluminum alloy wiring is no greater than 1 at %; said nitride layer is disposed between said barrier layer and said aluminum alloy wiring by annealing said barrier layer and said aluminum alloy wiring.
Claim 5
Dependent Claim
35 words
The electrode for a semiconductor device according to claim 1, wherein a margin of difference between an interatomic distance of said barrier layer and an interatomic distance of said nitride layer is 5% or less.
Claim 6
Dependent Claim
74 words
The electrode for a semiconductor device according to claim 1, wherein a thickness of said nitride layer is at least 40 Å; a margin of difference between an interatomic distance of said barrier layer and an interatomic distance of said nitride layer is no greater than 3%; and a margin of difference between an interatomic distance of said nitride layer and an interatomic distance of said aluminum alloy wiring is no greater than 3%.
Claim 7
Dependent Claim
37 words
The electrode for a semiconductor device according to claim 1, wherein said metal with a high melting point contained in said barrier layer is selected from the group consisting of titanium (Ti), tungsten (W) and molybdenum (Mo).
References Cited (Backward Citations)
US4141022A
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JPS5947741A
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US4989064A
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US5049975A
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JPH033395A
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JPH03262127A
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JPH0442537A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-12-29 | 2001-06-30 | 2001-12-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-12-29 | 2005-06-30 | 2005-12-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-12-29 | 2009-06-30 | 2009-12-30 | $7700.00 | Window Closed / Lapsed |