JPH0442537A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Semiconductor device and manufacture thereof
Assignee: Fujitsu Ltd
•
Filing: 1990-06-08
•
Granted: —
•
Expires: 2010-06-08
Abstract
Abstract PURPOSE:To strengthen the entire surface, and to improve resistance to electromigration, stress migration by forming an alumina film on the entire wiring pattern. CONSTITUTION:Aluminum alloy containing 1% of Si is deposited on a titanium nitride oxide film 4 to form an aluminum alloy film 5. When the film 5 is deposited, the film 4 is simultaneously reacted with the film 5 to generate alumina, and an alumina film 6 is formed between the film 5 and a titanium nitride film 3. The films 5, 6, 4 are patterned to form a wiring pattern 7. The pattern 7 is anodized to form an alumina film 7a on the surface.
Inventors
- 👤 Tamaki Mizushima
- 👤 水嶋 環
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-04 09:17
CPC Classifications
—
Claims Analysis
Total Claims: 0
No claims parsed yet. Click Sync Now above to re-index claims from Google Patents.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.