US5702980A
Expired / Lapsed
US
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Method for forming intermetal dielectric with SOG etchback and CMP
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 1996-03-15
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Granted: 1997-12-30
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Expires: 2016-03-15
Abstract
Abstract A defect free intermetal dielectric, IMD, and method of forming the defect free IMD are described. The IMD uses spacers formed by means of etchback of a layer of spin-on-glass, SOG. In order to use an oxide layer formed by means of plasma enhanced tetra-ethyl-ortho-silicate, PE-TEOS, as part of the IMD an oxide cap layer formed using plasma enhanced chemical vapor deposition, PE-CVD, is used to isolate the SOG spacers from the PE-TEOS formed oxide layer. By isolating the PE-TEOS formed oxide layer from the SOG spacers a reliable and defect free IMD is achieved.
Inventors
- 👤 Chen-Hua Douglas Yu
- 👤 Sylin-Ming Jang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 19:16
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10W20/075; H10W20/077; H10W20/098; H10W20/40; H10W20/45; H10W20/48
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
157 words
A method of forming intermetal dielectric, comprising the steps of: providing a semiconductor substrate having devices formed therein; providing a layer of base dielectric formed on said semiconductor substrate; providing an electrode pattern formed on said layer of base dielectric; forming an oxide underlayer over said layer of base dielectric and said electrode pattern; forming a layer of spin-on-glass on said oxide underlayer; etching back said layer of spin-on-glass wherein said spin-on-glass is removed from that part of said oxide underlayer directly over said electrode pattern; forming an oxide cap layer over said oxide underlayer and that part of said layer of spin-on-glass remaining after etching back said layer of spin-on-glass, wherein said oxide cap layer is formed using plasma enhanced chemical vapor deposition with silane and oxygen; forming an intermetal oxide layer over said oxide cap layer, wherein said intermetal oxide layer is formed using plasma enhanced deposition of tetra-ethyl-ortho-silicate; and planarizing said intermetal oxide layer.
Claim 2
Independent Claim
157 words
A method of forming intermetal dielectric, comprising the steps of: providing a semiconductor substrate having devices formed therein; providing a layer of base dielectric formed on said semiconductor substrate; providing an electrode pattern formed on said layer of base dielectric; forming an oxide underlayer over said layer of base dielectric and said electrode pattern; forming a layer of spin-on-glass on said oxide underlayer; etching back said layer of spin-on-glass wherein said spin-on-glass is removed from that part of said oxide underlayer directly over said electrode pattern; forming an oxide cap layer over said oxide underlayer and that part of said layer of spin-on-glass remaining after etching back said layer of spin-on-glass, wherein said oxide cap layer is formed using plasma enhanced chemical vapor deposition with silane and oxygen; forming an intermetal oxide layer over said oxide cap layer, wherein said intermetal oxide layer is formed using plasma enhanced deposition of tetra-ethyl-ortho-silicate; and planarizing said intermetal oxide layer.
Claim 3
Dependent Claim
26 words
The method of claim 1 wherein said oxide underlayer is silicon dioxide formed using plasma enhanced chemical vapor deposition with SiH 4 and O 2 precursors.
Claim 4
Dependent Claim
22 words
The method of claim 1 wherein said oxide underlayer is silicon dioxide having a thickness of between about 500 and 2000 Angstroms.
Claim 5
Dependent Claim
13 words
The method of claim 1 wherein said oxide cap layer is silicon dioxide.
Claim 6
Dependent Claim
23 words
The method of claim 1 wherein said oxide cap layer is silicon dioxide having a thickness of between about 500 and 2000 Angstroms.
Claim 7
Dependent Claim
12 words
The method of claim 1 wherein said intermetal oxide is silicon dioxide.
Claim 8
Dependent Claim
22 words
The method of claim 1 wherein said intermetal oxide is silicon dioxide having a thickness of between about 6000 and 8000 Angstroms.
Claim 9
Dependent Claim
20 words
The method of claim 1 wherein said planarizing of said intermetal oxide layer is carried out using chemical mechanical polishing.
Claim 10
Dependent Claim
28 words
The method of claim 1 wherein said layer of spin-on-glass has a thickness of between about 2000 and 6000 Angstroms before said etching back of said spin-on-glass layer.
Claim 11
Dependent Claim
24 words
The method of claim 1 wherein said etching back of said spin-on-glass layer uses CF 4 , CHF 3 , and O 2 .
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-12-29 | 2001-06-30 | 2001-12-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-12-29 | 2005-06-30 | 2005-12-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-12-29 | 2009-06-30 | 2009-12-30 | $7700.00 | Window Closed / Lapsed |