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US5693551A
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US
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Method for fabricating a tri-state read-only memory device
Assignee: United Microelectronics Corp
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Filing: 1995-09-19
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Granted: 1997-12-02
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Expires: 2015-09-19
Abstract
Abstract A tri-state read-only memory device and its fabrication method are disclosed herein. After a plurality of word lines are formed and spaced apart in parallel through patterning by a shielding layer, insulating blocks are formed to fill the trenches among the word lines. Then removing the shielding layer, sidewalls of the insulating blocks are revealed, and spacers are formed on the sidewalls thereof. The spacers above the first state regions are removed to form the conductive width of the channel regions in three forms. By merely applying one code-implantation, the ROM device are coded into on of three states at the same time. In addition, the disposition of the insulating blocks by liquid-phase deposition prevents the misalignment that often occurs with the conventional method.
Inventors
- 👤 Kuan-Cheng Su
- 👤 Chen-Hui Chung
- 👤 Yi-Chung Sheng
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 09:39
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/56; G11C11/5692; H; H10; H10B; H10B20/00; H10B20/27; H10B20/30; H10B20/38; H10B20/383
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
175 words
A method for fabricating a tri-state read only memory device, comprising: providing a semiconductor substrate; forming a plurality of first conducting lines spaced in parallel in said substrate; forming a dielectric layer on said substrate; forming a conducting layer on said dielectric layer; forming a shielding layer with predetermined patterns on said conducting layer; etching and patterning said conducting layer into a plurality of second conducting lines spaced in parallel by utilizing said shielding layer as masking, and shaping a trench between each two of said second conducting lines; forming insulating blocks individually filling said trenches; removing said shielding layer exposing sidewalls of said insulating blocks; forming sidewall spacers on said sidewalls of said insulating blocks; forming a first masking layer over said substrate; removing a part of said sidewall spacers not covered by said first masking layer; removing said first masking layer; forming a second masking layer over said substrate; and subjecting said substrate to a code implantation by utilizing said second masking layer as shielding to form first, second and third state regions.
Claim 2
Independent Claim
175 words
A method for fabricating a tri-state read only memory device, comprising: providing a semiconductor substrate; forming a plurality of first conducting lines spaced in parallel in said substrate; forming a dielectric layer on said substrate; forming a conducting layer on said dielectric layer; forming a shielding layer with predetermined patterns on said conducting layer; etching and patterning said conducting layer into a plurality of second conducting lines spaced in parallel by utilizing said shielding layer as masking, and shaping a trench between each two of said second conducting lines; forming insulating blocks individually filling said trenches; removing said shielding layer exposing sidewalls of said insulating blocks; forming sidewall spacers on said sidewalls of said insulating blocks; forming a first masking layer over said substrate; removing a part of said sidewall spacers not covered by said first masking layer; removing said first masking layer; forming a second masking layer over said substrate; and subjecting said substrate to a code implantation by utilizing said second masking layer as shielding to form first, second and third state regions.
Claim 3
Dependent Claim
30 words
The method as in claim 1, wherein each of said sidewall spacers has a width ranging from about 1/6 to about 1/3 of the width of said second conducting lines.
Claim 4
Dependent Claim
21 words
The method as in claim 1, wherein said insulating blocks are made of silicon oxides formed by a liquid-phase deposition procedure.
Claim 5
Dependent Claim
24 words
The method as in claim 1, wherein said shielding layer is a photoresist layer patterned by a photolithography procedure to have said predetermined patterns.
Claim 6
Dependent Claim
15 words
The method as in claim 1, wherein said dielectric layer is made of silicon oxides.
Claim 7
Dependent Claim
17 words
The method as in claim 1, further comprising a silicon oxide layer formed atop said conducting layer.
Claim 8
Dependent Claim
14 words
The method as in claim 1, wherein said conducting layer is made of polysilicon.
Claim 9
Dependent Claim
21 words
The method as in claim 1, wherein said first conducting layers are doped regions formed by implanting impurities into said substrate.
Claim 10
Dependent Claim
34 words
The method as in claim 1, wherein the step for forming said sidewall spacers comprises: forming a silicon nitride layer overlying said substrate; and etching back said silicon nitride layer forming said sidewall spacers.
Claim 11
Dependent Claim
15 words
The method as in claim 1, wherein said first masking layer is a photoresist layer.
Claim 12
Dependent Claim
15 words
The method as in claim 1, wherein said second masking layer is a photoresist layer.
Claim 13
Dependent Claim
21 words
The method as in claim 1, wherein said second conducting lines stride across said conducting lines at an almost orthogonal angle.
References Cited (Backward Citations)
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