Patent US5693541A successfully refreshed from Google Patents.
US5693541A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for manufacturing a semiconductor device using a silicon nitride mask
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1995-08-23
•
Granted: 1997-12-02
•
Expires: 2015-08-23
Abstract
Abstract An amorphous silicon film is formed on a glass substrate by a CVD method, and a mask is formed of a silicon nitride film. Then, nickel is selectively doped into the amorphous silicon film by spin-coating solution containing nickel onto the amorphous silicon film. Thereafter, the amorphous silicon film is crystallized by a thermal treatment.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Hongyong Zhang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 22:49
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10P14/29; H10P14/2901; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/38; H10P14/3802; H10P14/3806; H10P14/3808; H10P14/3816; H10D30/60; H10D30/67; H10D30/6704; H10D30/6713; H10D30/6715; Y; Y10; Y10S; Y10S148/00; Y10S148/016
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
143 words
A method of manufacturing a semiconductor device comprising the steps of: forming a silicon oxide film and an amorphous silicon film on a substrate having an insulating surface; performing a heat treatment on the substrate sequentially to said silicon oxide film forming step without exposing the substrate to atmospheric air to thereby remove hydrogen from the amorphous silicon film; forming a silicon nitride film on the amorphous silicon film sequentially to said hydrogen-removing step; patterning the silicon nitride film to selectively expose the amorphous silicon film; doping a metal element so as to be contacted with the exposed amorphous silicon film to promote crystal growth of the amorphous silicon film; and performing a heat treatment on the amorphous silicon film to crystallize the amorphous silicon film in a direction parallel to the substrate from an area in which the metal element is doped.
Claim 2
Independent Claim
143 words
A method of manufacturing a semiconductor device comprising the steps of: forming a silicon oxide film and an amorphous silicon film on a substrate having an insulating surface; performing a heat treatment on the substrate sequentially to said silicon oxide film forming step without exposing the substrate to atmospheric air to thereby remove hydrogen from the amorphous silicon film; forming a silicon nitride film on the amorphous silicon film sequentially to said hydrogen-removing step; patterning the silicon nitride film to selectively expose the amorphous silicon film; doping a metal element so as to be contacted with the exposed amorphous silicon film to promote crystal growth of the amorphous silicon film; and performing a heat treatment on the amorphous silicon film to crystallize the amorphous silicon film in a direction parallel to the substrate from an area in which the metal element is doped.
Claim 3
Dependent Claim
26 words
The method of claim 1 wherein the heat treatment performed to crystallize the amorphous silicon film is performed at a temperature of 450° to 600° C.
Claim 4
Dependent Claim
29 words
The method of claim 1 wherein the heat treatment performed to remove the hydrogen from the amorphous silicon film is performed at a temperature of 350° to 550° C.
Claim 5
Dependent Claim
20 words
The method of claim 1 wherein the silicon nitride film is formed at a thickness of 200 Å or more.
Claim 6
Dependent Claim
37 words
The method of claim 1 further comprising the step of removing the patterned silicon nitride film from on the amorphous silicon film by heated phosphoric acid after the heat treatment performed to crystallize the amorphous silicon film.
Claim 7
Dependent Claim
24 words
The method of claim 1 wherein the crystallized silicon film is used in a thin film transistor for an active matrix type electro-optical device.
Claim 8
Dependent Claim
11 words
The method of claim 6 wherein the substrate comprises a glass.
Claim 9
Dependent Claim
29 words
The method of claim 1 wherein the metal element doping step is carried out by applying a solution containing the metal element therein over the exposed amorphous silicon film.
Claim 10
Dependent Claim
28 words
The method of claim 1 wherein the metal element is selected from the group consisting of Ni, Pd, Pt, Cu, Ag, Au, In, Sn, P, As and Sb.
Claim 11
Independent Claim
167 words
A method of manufacturing a semiconductor device comprising the steps of: forming a silicon oxide film and an amorphous silicon film on a substrate having an insulating surface; performing a heat treatment on the substrate sequentially to said silicon oxide film forming step without exposing the substrate to atmospheric air to thereby remove hydrogen from the amorphous silicon film; forming a silicon nitride film on the substrate sequentially to said hydrogen-removing step; patterning the silicon nitride film in the form of an active layer to selectively expose the amorphous silicon film; doping a metal element so as to be contacted with the exposed amorphous silicon film to promote crystal growth of the amorphous silicon film; performing a heat treatment on the amorphous silicon film to crystallize the amorphous silicon film in a direction parallel to the substrate from an area in which the metal element is doped; and patterning the crystallized silicon film using the patterned silicon nitride film as a mask to form an active layer.
Claim 12
Independent Claim
167 words
A method of manufacturing a semiconductor device comprising the steps of: forming a silicon oxide film and an amorphous silicon film on a substrate having an insulating surface; performing a heat treatment on the substrate sequentially to said silicon oxide film forming step without exposing the substrate to atmospheric air to thereby remove hydrogen from the amorphous silicon film; forming a silicon nitride film on the substrate sequentially to said hydrogen-removing step; patterning the silicon nitride film in the form of an active layer to selectively expose the amorphous silicon film; doping a metal element so as to be contacted with the exposed amorphous silicon film to promote crystal growth of the amorphous silicon film; performing a heat treatment on the amorphous silicon film to crystallize the amorphous silicon film in a direction parallel to the substrate from an area in which the metal element is doped; and patterning the crystallized silicon film using the patterned silicon nitride film as a mask to form an active layer.
Claim 13
Dependent Claim
26 words
The method of claim 10 wherein the heat treatment performed to crystallize the amorphous silicon film is performed at a temperature of 450° to 600° C.
Claim 14
Dependent Claim
29 words
The method of claim 10 wherein the heat treatment performed to remove the hydrogen from the amorphous silicon film is performed at a temperature of 350° to 550° C.
Claim 15
Dependent Claim
20 words
The method of claim 10 wherein the silicon nitride film is formed at a thickness of 200 Å or more.
Claim 16
Dependent Claim
23 words
The method of claim 10 wherein the active layer is used in a thin film transistor for an active matrix type electro-optical device.
Claim 17
Dependent Claim
11 words
The method of claim 14 wherein the substrate comprises a glass.
Claim 18
Dependent Claim
29 words
The method of claim 10 wherein the metal element doping step is carried out by applying a solution containing the metal element therein over the exposed amorphous silicon film.
Claim 19
Dependent Claim
28 words
The method of claim 10 wherein the metal element is selected from the group consisting of Ni, Pd, Pt, Cu, Ag, Au, In, Sn, P, As and Sb.
Claim 20
Independent Claim
75 words
A method of manufacturing a semiconductor device comprising the steps of: forming a silicon nitride film on an amorphous silicon film which is formed on a substrate having an insulating surface; doping a metal element using the silicon nitride film as a mask to promote crystal growth of the amorphous silicon film; performing a heat treatment to crystallize the amorphous silicon film; and forming an active layer using the silicon nitride film as a mask.
Claim 21
Independent Claim
75 words
A method of manufacturing a semiconductor device comprising the steps of: forming a silicon nitride film on an amorphous silicon film which is formed on a substrate having an insulating surface; doping a metal element using the silicon nitride film as a mask to promote crystal growth of the amorphous silicon film; performing a heat treatment to crystallize the amorphous silicon film; and forming an active layer using the silicon nitride film as a mask.
Claim 22
Dependent Claim
28 words
The method of claim 18 wherein the metal element is selected from the group consisting of Ni, Pd, Pt, Cu, Ag, Au, In, Sn, P, As and Sb.
References Cited (Backward Citations)
US4343081A
Cited
US4335161A
Cited
JPS58102560A
Cited
US5120667A
Cited
US5147826A
Cited
US5403772A
Cited
US5608232A
Cited
US5275851A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-12-01 | 2001-06-02 | 2001-12-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-12-01 | 2005-06-02 | 2005-12-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-12-01 | 2009-06-02 | 2009-12-02 | $7700.00 | Window Closed / Lapsed |