Patent US5686748A successfully refreshed from Google Patents.
US5686748A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Dielectric material and process to create same
Assignee: Round Rock Research LLC
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Filing: 1995-02-27
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Granted: 1997-11-11
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Expires: 2015-02-27
Abstract
Abstract An embodiment of the present invention describes a method for forming a dielectric material for a storage capacitor during fabrication of a semiconductor memory device, by: cleaning impurities from the surface of a conductive plate of the storage capacitor; forming a nitride film over the conductive plate's cleaned surface; forming a metal silicide film over the nitride film; and oxidizing the metal silicide film by rapid thermal oxide (RTO) processing. A resulting structure is a capacitor having a dielectric material that is an oxidized metal silicide film.
Inventors
- 👤 Randhir P.S. Thakur
- 👤 Gurtej S. Sandhu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 03:07
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10D; H10D1/00; H10D1/60; H10D1/68
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
83 words
A method for forming an oxidized compound over a silicon surface during fabrication of a semiconductor device, said method comprising the steps of: cleaning the silicon surface to provide a clean silicon surface; forming a dielectric film over said clean silicon surface; forming a TiSi x film over said dielectric film; and oxidizing said TiSi x film by rapid thermal oxide (RTO) processing, thereby transforming said TiSi x film into said oxidized compound having the form TiO x Si y O z .
Claim 2
Independent Claim
83 words
A method for forming an oxidized compound over a silicon surface during fabrication of a semiconductor device, said method comprising the steps of: cleaning the silicon surface to provide a clean silicon surface; forming a dielectric film over said clean silicon surface; forming a TiSi x film over said dielectric film; and oxidizing said TiSi x film by rapid thermal oxide (RTO) processing, thereby transforming said TiSi x film into said oxidized compound having the form TiO x Si y O z .
Claim 3
Dependent Claim
20 words
The method of claim 1, wherein said cleaning the silicon surface comprises removing a native oxide from said silicon surface.
Claim 4
Dependent Claim
13 words
The method of claim 1, wherein said dielectric film comprises a nitride film.
Claim 5
Dependent Claim
20 words
The method of claim 1, wherein said cleaning of the surface of the silicon is accomplished by hydrofluoric vapor cleaning.
Claim 6
Dependent Claim
19 words
The method of claim 1, wherein said cleaning of the surface of the silicon is accomplished by ultraviolet-ozone cleaning.
Claim 7
Dependent Claim
19 words
The method of claim 1, wherein said cleaning of said silicon surface is accomplished by rapid thermal processing (RTP).
Claim 8
Dependent Claim
18 words
The method of claim 6, wherein the RTP is performed at a temperature ranging from 600° C.-1200° C.
Claim 9
Dependent Claim
19 words
The method of claim 6, wherein said RTP is performed for a time period ranging from 5 sec-60 sec.
Claim 10
Dependent Claim
18 words
The method of claim 1, wherein said step of forming a TiSi x film comprises chemical vapor deposition.
Claim 11
Dependent Claim
45 words
The method of claim 1, whereto said step of forming a TiSi x film comprises the steps of: depositing a silicon layer; depositing a titanium layer on said silicon layer; and annealing said layers to cause the titanium layer to react with the silicon layer.
Claim 12
Dependent Claim
24 words
The method of claim 3, wherein said step of forming a dielectric film comprises forming said nitride film by rapid thermal nitridation (RTN) processing.
Claim 13
Dependent Claim
19 words
The method of claim 11, wherein said RTN processing is performed at a temperature ranging from 600° C.-1200° C.
Claim 14
Dependent Claim
20 words
The method of claim 11, wherein said RTN processing is performed for a time period ranging from 5 sec-60 sec.
Claim 15
Dependent Claim
19 words
The method of claim 1, wherein said RTO processing is performed at a temperature ranging between 600° C.-1200° C.
Claim 16
Dependent Claim
20 words
The method of claim 14, wherein said RTO processing is performed for a time period ranging between 5 sec-60 sec.
References Cited (Backward Citations)
US4690730A
Cited
US4949162A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2000-11-10 | 2001-05-12 | 2001-11-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-11-10 | 2005-05-12 | 2005-11-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-11-10 | 2009-05-12 | 2009-11-11 | $7700.00 | Window Closed / Lapsed |