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US5686735A
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Silicon-on-insulator (SOI) transistor
Assignee: Samsung Electronics Co Ltd
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Filing: 1995-02-17
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Granted: 1997-11-11
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Expires: 2015-02-17
Abstract
Abstract An SOI transistor whose source region and/or drain region have a heterostructure made up of at least two different semiconductor materials, to thereby prevent a bipolar-induced breakdown.
Inventors
- 👤 Jai-Hoon Sim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 08:19
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/64; H10D30/66; H10D30/667; H10D30/01; H10D30/021; H10D30/031; H10D30/0321; H10D30/0323; H10D30/67; H10D30/6704; H10D30/6708; H10D30/6713; H10D30/6729; H10D30/673; H10D30/6733; H10D30/6734; H10D30/791; H10D30/797; H10D30/798; H10D86/00; H10D86/201; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6744
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
144 words
A silicon-on-insulator (SOI) transistor comprising: a semiconductor substrate; an insulating layer formed on said substrate; a channel region comprised of a single layer of a first semiconductor material formed on said insulating layer, said first semiconductor material being Si; and first and second impurity regions respectively disposed on opposite sides of, and abutting with, said channel region, at least one of said first and second impurity regions being comprised of a heterostructure of at least two layers of second and third semiconductor materials successively formed on said insulating layer, said second and third semiconductor materials being Si and Si 1-x Ge x , respectively and having different energy band gaps, said heterostructure being formed of a first layer of Si, a second layer of Si 1-x Ge x formed on said first layer, and a third layer of Si formed on said second layer.
Claim 2
Dependent Claim
144 words
A silicon-on-insulator (SOI) transistor comprising: a semiconductor substrate; an insulating layer formed on said substrate; a channel region comprised of a single layer of a first semiconductor material formed on said insulating layer, said first semiconductor material being Si; and first and second impurity regions respectively disposed on opposite sides of, and abutting with, said channel region, at least one of said first and second impurity regions being comprised of a heterostructure of at least two layers of second and third semiconductor materials successively formed on said insulating layer, said second and third semiconductor materials being Si and Si 1-x Ge x , respectively and having different energy band gaps, said heterostructure being formed of a first layer of Si, a second layer of Si 1-x Ge x formed on said first layer, and a third layer of Si formed on said second layer.
Claim 3
Dependent Claim
20 words
A SOI transistor according to claim 1, wherein both said first and second impurity regions are comprised of said heterostructure.
References Cited (Backward Citations)
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