US5684738A
Expired / Lapsed
US
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Analog semiconductor memory device having multiple-valued comparators and floating-gate transistor
Assignee: Individual
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Filing: 1994-01-20
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Granted: 1997-11-04
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Expires: 2014-01-20
Abstract
Abstract A semiconductor memory circuit which realizes a source follower having a voltage gain equal to one, a decrease in the time necessary for the source follower to reach its full output voltage. Furthermore, the multiple-valued or analog output voltage can be easily converted to a binary-digital form with this memory circuit. This semiconductor circuit comprises at least an MOS transistor. A multiple-valued or analog data line is connected to the inputs of multiple-valued comparators, the outputs of said comparators are coupled capacitively to the input gate of a source-follower circuit, and the output of said source-follower circuit is fed back to the data line.
Inventors
- 👤 Rita Au
- 👤 Tadashi Shibata
- 👤 Tadahiro Ohmi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 12:16
CPC Classifications
H; H03; H03K; H03K19/00; H03K17/00; H03K17/06; H03K17/063; H03K17/04; H03K17/041; H03K17/0416; H03K17/04163; H03K19/02; H03K19/08; H03K19/094; H03K19/09425; H03M; H03M1/00; H03M1/12; H03M1/34; H03M1/36; H03M1/361
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
92 words
A semiconductor memory device comprising at least an MOS transistor coupled to multiple-valued comparators, wherein a data line carries a multiple-valued or analog voltage signal which shows a transient rising from a lower initial voltage to a higher final voltage level, said data line is connected to the inputs of said multiple-valued comparators, the outputs of said comparators are capacitively coupled to a floating gate electrode, said floating gate electrode is the input gate of an NMOS source-follower circuit, and the output of said source-follower circuit is fedback to the data line.
Claim 2
Dependent Claim
92 words
A semiconductor memory device comprising at least an MOS transistor coupled to multiple-valued comparators, wherein a data line carries a multiple-valued or analog voltage signal which shows a transient rising from a lower initial voltage to a higher final voltage level, said data line is connected to the inputs of said multiple-valued comparators, the outputs of said comparators are capacitively coupled to a floating gate electrode, said floating gate electrode is the input gate of an NMOS source-follower circuit, and the output of said source-follower circuit is fedback to the data line.
Claim 3
Dependent Claim
73 words
A semiconductor memory device in accordance with claim 1, wherein the output of the comparator detecting the highest voltage level is also connected to an inverter, the output of said inverter is connected to the gate electrode of a PMOS transistor, the source electrode potential of said PMOS transistor is equal to the highest voltage level of the memory device, and the drain of said PMOS transistor is connected to the data line.
Claim 4
Dependent Claim
84 words
A semiconductor memory device in accordance with claim 1, wherein the comparators comprise one or more inputs which are capacitively coupled to a second floating gate electrode, one of said inputs is connected to the data line and the other inputs are connected to bias voltages for the purpose of controlling the second floating gate potential, said second floating gate electrode is the input gate of two inverters connected in series, and the output of the second inverter is the output of the comparator.
Claim 5
Dependent Claim
42 words
A semiconductor memory device in accordance with claim 1, wherein a switch is added between the floating gate electrode and ground potential, and said switch is turned off when the memory device is in operation but turned on during a refresh cycle.
Claim 6
Dependent Claim
92 words
A semiconductor memory device comprising at least an MOS transistor coupled to multiple-valued comparators, wherein a data line carries a multiple-valued or analog voltage signal which shows a transient falling from a higher initial voltage to a lower final voltage level, said data line is connected to the inputs of said multiple-valued comparators, the outputs of said comparators are capacitively coupled to a floating gate electrode, said floating gate electrode is the input gate of an PMOS source-follower circuit, and the output of said source-follower circuit is fedback to the data line.
Claim 7
Dependent Claim
92 words
A semiconductor memory device comprising at least an MOS transistor coupled to multiple-valued comparators, wherein a data line carries a multiple-valued or analog voltage signal which shows a transient falling from a higher initial voltage to a lower final voltage level, said data line is connected to the inputs of said multiple-valued comparators, the outputs of said comparators are capacitively coupled to a floating gate electrode, said floating gate electrode is the input gate of an PMOS source-follower circuit, and the output of said source-follower circuit is fedback to the data line.
Claim 8
Dependent Claim
73 words
A semiconductor memory device in accordance with claim 5, wherein the output of the comparator detecting the lowest voltage level is also connected to an inverter, the output of said inverter is connected to the gate electrode of an NMOS transistor, the source electrode potential of said NMOS transistor is equal to the lowest voltage level of the memory device, and the drain of said NMOS transistor is connected to the data line.
Claim 9
Dependent Claim
84 words
A semiconductor memory device in accordance with claim 5, wherein the comparators comprise one or more inputs which are capacitively coupled to a second floating gate electrode, one of said inputs is connected to the data line and the other inputs are connected to bias voltages for the purpose of controlling the second floating gate potential, said second floating gate electrode is the input gate of two inverters connected in series, and the output of the second inverter is the output of the comparator.
Claim 10
Dependent Claim
42 words
A semiconductor memory device in accordance with claim 5, wherein a switch is added between the floating gate electrode and ground potential, and said switch is turned off when the memory device is in operation but turned on during a refresh cycle.
Claim 11
Dependent Claim
103 words
A semiconductor memory device comprising plural n-channel MOS transistors and p-channel MOS transistors coupled to multiple-valued comparators, wherein a data line carries a multiple-valued or analog voltage signal which shows a transient rising or falling from an initial voltage to a final voltage level, said data line is connected to the inputs of said multiple-valued comparators, the outputs of said comparators are capacitively coupled to a floating gate electrode, said floating gate electrode is the input gate of an CMOS source-follower circuit, and a switch between the output of said source-follower circuit and the data line alternately connects and disconnects a feedback loop.
Claim 12
Dependent Claim
103 words
A semiconductor memory device comprising plural n-channel MOS transistors and p-channel MOS transistors coupled to multiple-valued comparators, wherein a data line carries a multiple-valued or analog voltage signal which shows a transient rising or falling from an initial voltage to a final voltage level, said data line is connected to the inputs of said multiple-valued comparators, the outputs of said comparators are capacitively coupled to a floating gate electrode, said floating gate electrode is the input gate of an CMOS source-follower circuit, and a switch between the output of said source-follower circuit and the data line alternately connects and disconnects a feedback loop.
Claim 13
Dependent Claim
140 words
A semiconductor memory device in accordance with claim 9, wherein the output of the comparator detecting the highest voltage level is also connected to a first inverter, the output of said first inverter is connected to the gate electrode of a PMOS transistor, the source electrode potential of said PMOS transistor is equal to the highest voltage level of the memory device, the drain of said PMOS transistor is connected to the data line, and the output of the comparator detecting the lowest voltage level is also connected to a second inverter, the output of said second inverter is connected to the gate electrode of an NMOS transistor, the source electrode potential of said NMOS transistor is equal to the lowest voltage level of the memory device, and the drain of said NMOS transistor is connected to the data line.
Claim 14
Dependent Claim
84 words
A semiconductor memory device in accordance with claim 9, wherein the comparators comprise one or more inputs which are capacitively coupled to a second floating gate electrode, one of said inputs is connected to the data line and the other inputs are connected to bias voltages for the purpose of controlling the second floating gate potential, said second floating gate electrode is the input gate of two inverters connected in series, and the output of the second inverter is the output of the comparator.
Claim 15
Dependent Claim
44 words
A semiconductor memory device in accordance with claim 9, wherein a second switch is added between the floating gate electrode and ground potential, and said second switch is turned off when the memory device is in operation but turned on during a refresh cycle.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-11-03 | 2001-05-05 | 2001-11-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-11-03 | 2005-05-05 | 2005-11-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-11-03 | 2009-05-05 | 2009-11-04 | $7700.00 | Window Closed / Lapsed |