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US5679980A
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Conductive exotic-nitride barrier layer for high-dielectric-constant material electrodes
Assignee: Texas Instruments Inc
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Filing: 1996-12-19
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Granted: 1997-10-21
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Expires: 2016-12-19
Abstract
Abstract A preferred embodiment of this invention comprises an oxidizable layer (e.g. TiN 50), a conductive exotic-nitride barrier layer (e.g. Ti-Al-N 34) overlying the oxidizable layer, an oxygen stable layer (e.g. platinum 36) overlying the exotic-nitride layer, and a high-dielectric-constant material layer (e.g. barium strontium titanate 38) overlying the oxygen stable layer. The exotic-nitride barrier layer substantially inhibits diffusion of oxygen to the oxidizable layer, thus minimizing deleterious oxidation of the oxidizable layer.
Inventors
- 👤 Scott R. Summerfelt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:54
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/696; H10P; H10P14/00; H10P14/40; H10P14/418
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
106 words
A microelectronic structure comprising: an oxidizable layer, wherein said oxidizable layer is substantially conductive and unoxidized; a conductive nitride layer overlying said oxidizable layer, said conductive nitride selected from the group consisting of: titanium aluminum nitride, Zr nitride, Hf nitride, Y nitride, Sc nitride, La nitride, other rare earth nitrides, N deficient Al nitride, doped Al nitride, Mg nitride, Ca nitride, Sr nitride, Ba nitride, and combinations thereof; a conductive oxygen stable layer overlying and adjacent said conductive nitride layer; and a layer of a high-dielectric-constant material overlying said oxygen stable layer, whereby the conductive nitride layer substantially inhibits diffusion of oxygen to the oxidizable layer.
Claim 2
Dependent Claim
106 words
A microelectronic structure comprising: an oxidizable layer, wherein said oxidizable layer is substantially conductive and unoxidized; a conductive nitride layer overlying said oxidizable layer, said conductive nitride selected from the group consisting of: titanium aluminum nitride, Zr nitride, Hf nitride, Y nitride, Sc nitride, La nitride, other rare earth nitrides, N deficient Al nitride, doped Al nitride, Mg nitride, Ca nitride, Sr nitride, Ba nitride, and combinations thereof; a conductive oxygen stable layer overlying and adjacent said conductive nitride layer; and a layer of a high-dielectric-constant material overlying said oxygen stable layer, whereby the conductive nitride layer substantially inhibits diffusion of oxygen to the oxidizable layer.
Claim 3
Dependent Claim
13 words
The structure of claim 1, wherein said conductive nitride layer is partially oxidized.
Claim 4
Dependent Claim
16 words
The structure of 1, said structure further comprising an upper electrode overlying said high-dielectric-constant material layer.
Claim 5
Dependent Claim
16 words
The structure of 1, said structure further comprising an upper electrode overlying said high-dielectric-constant material layer.
Claim 6
Dependent Claim
40 words
The structure of claim 3, wherein said upper electrode is selected from the group consisting of: tungsten, tungsten nitride, titanium, titanium nitride, ruthenium dioxide, YBa 2 Cu 3 O 7-x , platinum, palladium, rhodium, gold, iridium, silver, and combinations thereof.
Claim 7
Dependent Claim
13 words
The structure of claim 1, wherein said conductive oxygen stable layer is platinum.
Claim 8
Dependent Claim
24 words
The structure of claim 1, wherein said conductive oxygen stable layer is selected from the group consisting of ruthenium, ruthenium dioxide, and combinations thereof.
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