Method for production of silicon wafer and apparatus therefor

Claim 1

A method for producing silicon wafers for use in semiconductor devices produced by cylindrically grinding a single crystal silicon ingot which has been kept in rotation on a pulling axis comprising the steps of: slicing a cylindrically ground silicon ingot in a direction perpendicular or substantially perpendicular to said pulling axis thereby obtaining a wafer, chamfering said wafer, then grinding the main surface of said wafer in an etchant, and polishing the ground surface of said wafer for mirror finish, and which method is characterized by the fact that said etchant in which said grinding is carried out is continuously refreshed and contains no loose abrasive and permits selective etching of deformed layers existent in the surface part of said wafer, and wherein said etchant is selected from the group consisting of (1) a ternary reagent consisting of 5 to 35 wt % of hydrofluoric acid, 15 to 45 wt % of nitric acid, and 40 to 80 wt % of water and (2) a binary reagent consisting of 30 to 50 wt % of sodium hydroxide or potassium hydroxide and 70 to 50 wt % of water.

Claim 2

A method for producing silicon wafers for use in semiconductor devices produced by cylindrically grinding a single crystal silicon ingot which has been kept in rotation on a pulling axis comprising the steps of: slicing a cylindrically ground silicon ingot in a direction perpendicular or substantially perpendicular to said pulling axis thereby obtaining a wafer, chamfering said wafer, then grinding the main surface of said wafer in an etchant, and polishing the ground surface of said wafer for mirror finish, and which method is characterized by the fact that said etchant in which said grinding is carried out is continuously refreshed and contains no loose abrasive and permits selective etching of deformed layers existent in the surface part of said wafer, and wherein said etchant is selected from the group consisting of (1) a ternary reagent consisting of 5 to 35 wt % of hydrofluoric acid, 15 to 45 wt % of nitric acid, and 40 to 80 wt % of water and (2) a binary reagent consisting of 30 to 50 wt % of sodium hydroxide or potassium hydroxide and 70 to 50 wt % of water.

Claim 4

An apparatus for producing silicon wafers for use in semiconductor devices where said wafers are produced by slicing wafers from a single crystal silicon ingot and grinding the main surface of said silicon wafer in the presence of an etchant containing no loose abrasive, which apparatus comprises: an etching tank adapted to store an etchant, a retaining member adapted to fix a wafer, a grinding member furnished with a grindstone, wherein said retaining member and said grinding member are disposed opposite each other in the vertical direction and inside said etching tank, a vertical motion mechanism for moving said retaining member and said grinding member toward each other and away from each other, wherein said wafer is fixed to said retaining member, wherein both said grinding member and said retaining member are movable in a combination of motions selected from the group consisting of: 1) rotating said grinding member and said retaining member in mutually opposite directions; 2) rotating said grinding member while at the same time rotating and revolving said retaining member; 3) rotating said retaining member while at the same time rotating and revolving said grinding member, and 4) rotating said retaining member while at the same time said grinding member is reciprocated, and wherein said etching tank is provided with an etchant supply pipe, an overflow discharge pipe, and a drainpipe.

Claim 5

An apparatus for producing silicon wafers for use in semiconductor devices where said wafers are produced by slicing wafers from a single crystal silicon ingot and grinding the main surface of said silicon wafer in the presence of an etchant containing no loose abrasive, which apparatus comprises: an etching tank adapted to store an etchant, a retaining member adapted to fix a wafer, a grinding member furnished with a grindstone, wherein said retaining member and said grinding member are disposed opposite each other in the vertical direction and inside said etching tank, a vertical motion mechanism for moving said retaining member and said grinding member toward each other and away from each other, wherein said wafer is fixed to said retaining member, wherein both said grinding member and said retaining member are movable in a combination of motions selected from the group consisting of: 1) rotating said grinding member and said retaining member in mutually opposite directions; 2) rotating said grinding member while at the same time rotating and revolving said retaining member; 3) rotating said retaining member while at the same time rotating and revolving said grinding member, and 4) rotating said retaining member while at the same time said grinding member is reciprocated, and wherein said etching tank is provided with an etchant supply pipe, an overflow discharge pipe, and a drainpipe.

Claim 6

An apparatus for producing silicon wafers for use in semiconductor devices by slicing a wafer from a single crystal silicon ingot and grinding the main surface of said silicon wafer in the presence of an etchant containing no loose abrasive, which apparatus comprises: an etching tank filled with an etchant, a retaining member adapted to fix a wafer, a grinding member furnished with a grindstone, a surface to fix a wafer on said retaining member, and wherein the grindstone is set in place on said grinding member, wherein said retaining member and said grindstone are disposed opposite each other in a vertical direction, said retaining member having a rotation motion and a vertical reciprocating motion, said grinding member having a reciprocating motion within said etching tank, and wherein said etching tank is provided with an etchant supply pipe, an overflow discharge pipe, and a drainpipe.

Claim 7

An apparatus for producing silicon wafers for use in semiconductor devices by slicing a wafer from a single crystal silicon ingot and grinding the main surface of said silicon wafer in the presence of an etchant containing no loose abrasive, which apparatus comprises: an etching tank filled with an etchant, a retaining member adapted to fix a wafer, a grinding member furnished with a grindstone, a surface to fix a wafer on said retaining member, and wherein the grindstone is set in place on said grinding member, wherein said retaining member and said grindstone are disposed opposite each other in a vertical direction, said retaining member having a rotation motion and a vertical reciprocating motion, said grinding member having a reciprocating motion within said etching tank, and wherein said etching tank is provided with an etchant supply pipe, an overflow discharge pipe, and a drainpipe.

Claim 8

An apparatus for producing silicon wafers for use in semiconductor devices by slicing wafers from a single crystal silicon ingot and grinding the main surface of said silicon wafer in the presence of an etchant containing no loose abrasive, which apparatus comprises: an etching tank having a grindstone on a bottom surface for grinding a wafer, being rotatable, and filled with an etchant, a retaining member adapted to fix a wafer, wherein the surface to fix a wafer on said retaining member is opposed to said grindstone in the vertical direction wherein said retaining member has a vertical reciprocating motion relative to said etching tank, wherein said retaining member has a motion selected from the group consisting of 1) rotation alone and 2) rotation in conjunction with a revolution, and wherein said etching tank is provided with an etchant supply pipe, an overflow discharge pipe, and a drainpipe.

Claim 9

An apparatus for producing silicon wafers for use in semiconductor devices by slicing wafers from a single crystal silicon ingot and grinding the main surface of said silicon wafer in the presence of an etchant containing no loose abrasive, which apparatus comprises: an etching tank having a grindstone on a bottom surface for grinding a wafer, being rotatable, and filled with an etchant, a retaining member adapted to fix a wafer, wherein the surface to fix a wafer on said retaining member is opposed to said grindstone in the vertical direction wherein said retaining member has a vertical reciprocating motion relative to said etching tank, wherein said retaining member has a motion selected from the group consisting of 1) rotation alone and 2) rotation in conjunction with a revolution, and wherein said etching tank is provided with an etchant supply pipe, an overflow discharge pipe, and a drainpipe.