US5677922A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor laser with crystalline window layer
Assignee: Mitsubishi Electric Corp
•
Filing: 1996-01-22
•
Granted: 1997-10-14
•
Expires: 2016-01-22
Abstract
Abstract A semiconductor laser according to the invention includes a compound semiconductor substrate having a surface with a first crystalline orientation; crystalline semiconductor layers including a first cladding layer, an active layer, and a second cladding layer successively disposed on the surface of the semiconductor substrate and including first and second window surfaces transverse to the surface of the semiconductor substrate and having a second crystalline orientation; a doped crystalline semiconductor window layer disposed on the window surfaces; and electrodes respectively disposed on the crystalline layers and the semiconductor substrate.
Inventors
- 👤 Norio Hayafuji
- 👤 Takashi Motoda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 19:08
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/16; H01S5/164; B; B82; B82Y; B82Y20/00; H01S5/162; H01S5/02; H01S5/0201; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32325; H01S5/34; H01S5/343; H01S5/34326; H01S5/40; H01S5/4025; H01S5/4031
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
86 words
A semiconductor laser comprising: a compound semiconductor substrate having a surface in a {211} plane of the semiconductor substrate; crystalline semiconductor layers including a first cladding layer, an active layer, and a second cladding layer successively disposed on the surface of the semiconductor substrate and including first and second window surfaces transverse to the surface of the semiconductor substrate and in {111} planes; a doped crystalline semiconductor window layer disposed on the window surfaces; and electrodes respectively disposed on the crystalline layers and the semiconductor substrate.
Claim 2
Dependent Claim
86 words
A semiconductor laser comprising: a compound semiconductor substrate having a surface in a {211} plane of the semiconductor substrate; crystalline semiconductor layers including a first cladding layer, an active layer, and a second cladding layer successively disposed on the surface of the semiconductor substrate and including first and second window surfaces transverse to the surface of the semiconductor substrate and in {111} planes; a doped crystalline semiconductor window layer disposed on the window surfaces; and electrodes respectively disposed on the crystalline layers and the semiconductor substrate.
Claim 3
Dependent Claim
21 words
The semiconductor laser of claim 1 wherein the active layer has a superlattice structure that is disordered adjacent the window layer.
Claim 4
Dependent Claim
33 words
The semiconductor laser of claim 1 wherein the active layer has a first band gap energy and the window layer has a second band gap energy larger than the first band gap energy.
Claim 5
Dependent Claim
29 words
The semiconductor laser of claim 1 wherein the active layer is selected from the group consisting of GaInP and AlGaInP and the first and second cladding layers are AlGaInP.
Claim 6
Dependent Claim
29 words
The semiconductor laser of claim 1 wherein the active layer is selected from the group consisting of GaAs and AlGaAs and the first and second cladding layers are AlGaAs.
Claim 7
Dependent Claim
20 words
The semiconductor laser of claim 1 wherein the window layer is selected from the group consisting of AlGaInP and AlGaAs.
Claim 8
Dependent Claim
112 words
A multiple beam semiconductor laser device comprising: a compound semiconductor substrate having a surface in a {211} plane of the semiconductor substrate; crystalline semiconductor layers including a first cladding layer, an active layer, and a second cladding layer successively disposed on the surface of the semiconductor substrate, including first and second window surfaces transverse to the surface of the semiconductor substrate and in a {111} planes, and a plurality of grooves transverse to the semiconductor substrate surface and to the window surfaces whereby multiple semiconductor lasers are formed; a doped crystalline semiconductor window layer disposed on the window surfaces; and electrodes disposed on the respective semiconductor lasers and on the semiconductor substrate.
Claim 9
Dependent Claim
112 words
A multiple beam semiconductor laser device comprising: a compound semiconductor substrate having a surface in a {211} plane of the semiconductor substrate; crystalline semiconductor layers including a first cladding layer, an active layer, and a second cladding layer successively disposed on the surface of the semiconductor substrate, including first and second window surfaces transverse to the surface of the semiconductor substrate and in a {111} planes, and a plurality of grooves transverse to the semiconductor substrate surface and to the window surfaces whereby multiple semiconductor lasers are formed; a doped crystalline semiconductor window layer disposed on the window surfaces; and electrodes disposed on the respective semiconductor lasers and on the semiconductor substrate.
Claim 10
Dependent Claim
23 words
The semiconductor laser device of claim 7 wherein the active layer includes a superlattice structure that is disordered adjacent the respective window layers.
Claim 11
Dependent Claim
34 words
The semiconductor laser device of claim 7 wherein the active layer has a first band gap energy and the window layers have a second band gap energy larger than the first band gap energy.
Claim 12
Dependent Claim
30 words
The semiconductor laser device of claim 7 wherein the active layer is selected from the group consisting of GaInP and AlGaInP and the first and second cladding layers are AlGaInP.
Claim 13
Dependent Claim
29 words
The semiconductor laser of claim 7 wherein the active layer is selected from the group consisting of GaAs and AlGaAs and the first and second cladding layers are AlGaAs.
Claim 14
Dependent Claim
20 words
The semiconductor laser of claim 7 wherein the window layers are selected from the group consisting of AlGaInP and AlGaAs.
References Cited (Backward Citations)
US4122407A
Cited
JPS5683034A
Cited
JPS5712562A
Cited
JPS6057990A
Cited
JPH02159082A
Cited
EP0469900A2
Cited
JPH04116880A
Cited
EP0475618A2
Cited
US5228047A
Cited
US5294815A
Cited
US5357123A
Cited
JPH0645689A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-10-13 | 2001-04-14 | 2001-10-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-10-13 | 2005-04-14 | 2005-10-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-10-13 | 2009-04-14 | 2009-10-14 | $7700.00 | Window Closed / Lapsed |