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EP0469900A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

A method for the production of a semiconductor laser device

Assignee: Sharp Corp
•
Filing: 1991-08-01
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Granted: —
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Expires: 2011-08-01
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Abstract

Abstract There is provided a method for the production of a semiconductor laser device which emits laser light from a facet (307). The method includes the steps of: growing a multi-layered structure containing an active layer (304) for laser oscillation on a semiconductor substrate (301) to form a wafer; etching the multi-layered structure to form a striped groove (320) perpendicular to the direction of an optical waveguide, resulting in a pair of resonator facets (307); bringing the facets (307) into contact with a sulfur-containing solution (308); subjecting the facets (307) to heat treatment; growing a semiconductor layer (309) on the surface of the facets (307), which layer (309) has a band gap greater than that of the active layer (304); and cleaving the wafer along the striped groove (320) to obtain a semiconductor laser device.

Inventors

  • 👤 Mitsuhiro Matsumoto
  • 👤 Kazuaki Sasaki
  • 👤 Masaki Kondo

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-10-29 06:00
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/16; H01S5/164; H10; H10P; H10P14/00; H10P14/60; H01S5/02; H01S5/0201; H01S5/0202; H01S5/028; H01S5/0281; H01S5/0282

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 128 words
A method for the production of a semiconductor laser device which emits laser light from a facet, comprising the steps of: growing a multi-layered structure containing an active layer (304) for laser oscillation on a semiconductor substrate (301) to form a wafer; etching the multi-layered structure to form a striped groove (320) perpendicular to the direction of an optical waveguide, resulting in a pair of resonator facets (307); bringing the facets (307) into contact with a sulfur-containing solution (308); subjecting the facets (307) to heat treatment; growing a semiconductor layer (309) on the surface of the facets (307), said layer (309) having a band gap greater than that of the active layer (304); and cleaving the wafer along the striped groove (320) to obtain a semiconductor laser device.
Claim 2
Dependent Claim 39 words
A method according to claim 1, wherein the sulfur-containing solution (308) is selected from the group consisting of undiluted (NH₄)₂S solutions, aqueous (NH₄)₂S solutions, undiluted (NH₄)₂S x solutions, aqueous (NH₄)₂S x solutions, undiluted Na₂S solutions and aqueous Na₂S solutions.
Claim 3
Dependent Claim 21 words
A method according to claim 1 or 2, wherein the heat treatment is conducted at a temperature of 500°C to 600°C.
Claim 4
Dependent Claim 37 words
A method according to claim 1, 2 or 3, wherein the semiconductor layer (309) formed on the surface of the facets (307) has a band gap increasing gradually with an increase in the distance from the facets.

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