EP0475618A2
Expired / Lapsed
EP
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Method of fabricating semiconductor laser device
Assignee: Mitsubishi Electric Corp
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Filing: 1991-08-23
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Granted: —
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Expires: 2011-08-23
Abstract
Abstract A method of fabricating a semiconductor laser device includes disposing a lower cladding layer (22), a superlattice active layer (23), an upper cladding layer (24), and a contact layer (25) in the named order on a substrate (21), disposing, on resonator end surfaces, films (26A,26B) containing a material which can cause disorder of the semiconductor superlattice structure at a high temperature, and causing current to flow between the substrate (21) and the contact layer (25) to cause laser oscillations. The laser oscillations cause laser light to be generated, which is absorbed at the resonator end surfaces (28A,28B). The resonator end surfaces (28A,28B) are locally heated due to absorption of laser light, whereby the disorder-causing material is diffused into the resonator end surfaces and the semiconductor superlattice structure in the vicinity of the resonant end surface is disordered to thereby form window regions (27A,27B).
Inventors
- 👤 Kazuhisa c/o Mitsubishi Denki K.K. Takahashi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-27 20:14
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; H10H20/812; B; B82; B82Y; B82Y20/00; H01; H01S; H01S5/00; H01S5/02; H01S5/028; H01S5/10; H01S5/16; H01S5/164; H10H20/01; H10H20/011; H10H20/013; H01S5/0201; H01S5/162; Y; Y10; Y10S; Y10S148/00; Y10S148/095; Y10S148/16
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
161 words
A method of fabricating a semiconductor laser device, comprising the steps of: forming a lower cladding layer, an active layer having a semiconductor superlattice structure, an upper cladding layer, and a contact layer on a substrate in the named order with said lower cladding layer being adjacent to said substrate; disposing, on resonator end surfaces, films containing a material which causes said semiconductor superlattice structure to be disordered at a high temperature; and causing current of predetermined magnitude to flow between said substrate and said contact layer to cause laser oscillations to occur so that laser light is generated, the thus generated laser light being absorbed at said resonator end surfaces to cause localized generation of heat which, in turn, causes said disorder-causing material to be diffused from said films into the superlattice structure in the vicinity of said resonator end surfaces, whereby said semiconductor superlattice structure in the vicinity of said resonator end surfaces is disordered to form window regions.
Claim 2
Dependent Claim
82 words
A method of fabricating a semiconductor laser device, according to Claim 1 wherein said substrate is of N-type GaAs, said lower cladding layer is of N-type AlGaAs, said active layer is formed of a GaAs/AlGaAs superlattice structure, said upper cladding layer is of P-type AlGaAs, the contact layer is of P-type GaAs, and the films disposed on said resonator end surfaces are formed of ZnO, CdO, MgO, BeO or any other suitable material which contains an element acting as a P-type dopant.
Claim 3
Dependent Claim
81 words
A method of fabricating a semiconductor laser device, according to Claim 1 wherein said substrate is of N-type InP, said lower cladding layer is of N-type InGaAs, said active layer is formed of an InP/InGaAs superlattice structure, said upper cladding layer is of P-type InGaAs, said contact layer is of P-type InP, and said films disposed on said resonator end surfaces are of ZnO, CdO, MgO, BeO or any other suitable material which contains an element acting as a P-type dopant.
Claim 4
Dependent Claim
81 words
A method of fabricating a semiconductor laser device, according to Claim 1 wherein said substrate is of N-type InP, said lower cladding layer is of N-type InGaAsP, said active layer is formed of an InP/InGaAsP superlattice structure, said upper cladding layer is of P-type InGaAsP, said contact layer is of P-type InP, and said films disposed on said resonator end surfaces are of ZnO, CdO, MgO, BeO or any other suitable material which contains an element acting as a P-type dopant.
Claim 5
Dependent Claim
81 words
A method of fabricating a semiconductor laser device, according to Claim 1 wherein said substrate is of N-type GaAs, said lower cladding layer is of N-type AlGaInP, said active layer is formed of a GaAs/AlGaInP superlattice structure, said upper cladding layer is of P-type AlGaInP, said contact layer is of P-type GaAs, and said films disposed on said resonator end surfaces are of ZnO, CdO, MgO, BeO or any other suitable material which contains an element acting as a P-type dopant.
Claim 6
Dependent Claim
81 words
A method of fabricating a semiconductor laser device, according to Claim 1 wherein said substrate is of N-type InP, said lower cladding layer is of N-type AlGaInAs, said active layer is formed of an InP/AlGaInAs superlattice structure, said upper cladding layer is of P-type AlGaInAs, said contact layer is of P-type InP, and said films disposed on said resonator end surfaces are of ZnO, CdO, MgO, BeO or any other suitable material which contains an element acting as a P-type dopant.
Claim 7
Dependent Claim
36 words
A method of fabricating a semiconductor laser device, according to Claim 1 wherein the width of the window regions formed at the resonator end surfaces by disordering the semiconductor superlattice structure is 1 µm or less.
Claim 8
Dependent Claim
140 words
A semiconductor laser device (fig.5) for use in a method as claimed in claim 1 and comprising: a substrate (21); a lower cladding layer (22) on said substrate; an active layer (23) of semiconductor superlattice structure on said lower cladding layer (22); an upper cladding layer (24) on said active layer (23); and a contact layer (25) on said upper cladding layer (24): which device is characterised by: deposited films (26A,26B) extending respectively over the end surfaces of said substrate (21), lower cladding layer (22), active layer (23), upper cladding layer (24) and contact layer (25), which films (26A, 26B) are absorbtive of laser light generated in said active layer (23) and contain a diffusable component which upon diffusion into said active layer (23) shall establish disorder (27A,27B) therein when laser light is absorbed by each respective deposited film (26A,26B).
Claim 9
Dependent Claim
32 words
A device as claimed in claim 8 wherein said active layer (23) includes disordered window regions (27A,27B) at each end that is adjacent to a respective one of said deposited films (26A,26B).
References Cited (Backward Citations)
No citation records indexed.
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