Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
121 words
A method of forming an active region of a semiconductor device, comprising the steps of: forming a buffer layer containing a material susceptible to oxidation, on a semiconductor substrate; then forming a first oxidation resistant layer containing nitrogen in the buffer layer by exposing the buffer layer to a nitrogen containing plasma while maintaining a temperature of the substrate at less than about 400° C.; then forming a second oxidation resistant layer on the first oxidation resistant layer; and then selectively oxidizing a portion of the buffer layer using the first and second oxidation resistant layers as a mask, to define the active region in a first portion of the substrate which extends opposite the first and second oxidation resistant layers.
Claim 2
Independent Claim
121 words
A method of forming an active region of a semiconductor device, comprising the steps of: forming a buffer layer containing a material susceptible to oxidation, on a semiconductor substrate; then forming a first oxidation resistant layer containing nitrogen in the buffer layer by exposing the buffer layer to a nitrogen containing plasma while maintaining a temperature of the substrate at less than about 400° C.; then forming a second oxidation resistant layer on the first oxidation resistant layer; and then selectively oxidizing a portion of the buffer layer using the first and second oxidation resistant layers as a mask, to define the active region in a first portion of the substrate which extends opposite the first and second oxidation resistant layers.
Claim 3
Dependent Claim
25 words
The method of claim 1, wherein said oxidizing step comprises oxidizing a portion of the substrate extending opposite the oxidized portion of the buffer layer.
Claim 4
Dependent Claim
36 words
The method of claim 2, wherein said buffer layer contains an oxide film extending to a surface thereof; and wherein said step of forming a first oxidation resistant layer comprises converting the oxide film to SiON.
Claim 5
Dependent Claim
40 words
The method of claim 3, wherein said step of exposing the buffer layer to a nitrogen containing plasma comprises exposing the oxide film to a nitrogen containing plasma for a duration in a range between about 10 and 100 seconds.
Claim 6
Dependent Claim
34 words
The method of claim 4, wherein said step exposing the oxide film to a nitrogen containing plasma comprises supplying the nitrogen containing plasma with between about 100 and 400 Watts of radio frequency power.
Claim 7
Independent Claim
128 words
A method of forming an active region of a semiconductor device, comprising the steps of: forming a pad oxide layer on a face of a semiconductor substrate; forming a buffer layer containing a material selected from the group consisting of polycrystalline silicon and amorphous silicon and a native oxide film thereon, on the pad oxide layer, opposite the face; converting the native oxide film to a silicon oxynitride film by exposing the native oxide film to a nitrogen containing plasma while maintaining a temperature of the substrate at less than about 400° C.; then forming an oxidation resistant layer containing silicon nitride on the silicon oxynitride film; and oxidizing the buffer layer using the oxidation resistant layer as a mask, to define the active region in the substrate.
Claim 8
Independent Claim
128 words
A method of forming an active region of a semiconductor device, comprising the steps of: forming a pad oxide layer on a face of a semiconductor substrate; forming a buffer layer containing a material selected from the group consisting of polycrystalline silicon and amorphous silicon and a native oxide film thereon, on the pad oxide layer, opposite the face; converting the native oxide film to a silicon oxynitride film by exposing the native oxide film to a nitrogen containing plasma while maintaining a temperature of the substrate at less than about 400° C.; then forming an oxidation resistant layer containing silicon nitride on the silicon oxynitride film; and oxidizing the buffer layer using the oxidation resistant layer as a mask, to define the active region in the substrate.
Claim 9
Dependent Claim
32 words
The method of claim 6, wherein said converting step comprises exposing the native oxide film to a nitrogen containing plasma for a duration in a range between about 10 and 100 seconds.
Claim 10
Dependent Claim
47 words
The method of claim 6, wherein said step of converting the native oxide film to a silicon oxynitride film by exposing the native oxide film to a nitrogen containing plasma comprises supplying the nitrogen containing plasma with between about 100 and 400 Watts of radio frequency power.