Patent US5674769A successfully refreshed from Google Patents.
US5674769A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for forming deep trench DRAMs with sub-groundrule gates
Assignee: Siemens AG
•
Filing: 1996-06-14
•
Granted: 1997-10-07
•
Expires: 2016-06-14
Abstract
Abstract A method of fabricating sub-GR gates in a deep trench DRAM cell. The method comprises depositing, removing, and selectively etching a plurality of layers which include sacrificial spacers, liners, masking, and resist layers of both semiconducting and non-semiconducting materials on a semiconductor substrate according to specific process flows designed to circumvent the problems associated with prior art sub-GR processes. The method represents an improvement on standard gate conductor processes and provides a device which achieves an up to now unachieved decoupling of channel doping and junction doping.
Inventors
- 👤 Johann Alsmeier
- 👤 Christine Dehm
- 👤 Erwin Hammerl
- 👤 Reinhard J. Stengl
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 19:41
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/05; H10B12/053; H10B12/30; H10B12/34
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
104 words
A process for fabricating sub-GR gates in a semiconducting substrate of a dynamic random access memory array, said substrate having a deep trench, a shallow trench isolation, and nitride seal regions formed thereon; comprising the steps of: depositing a sacrificial spacer on said semiconductor substrate; etching a recess in a selective portion of said sacrificial spacer; filling said recess with insulating material to form a column-shaped structure having opposing sides; removing the remaining portion of said sacrificial spacer; etching a trench along each side of said column-shaped structure of insulating material; and filling trenches with conductive material to form a pair of trench gates.
Claim 2
Dependent Claim
104 words
A process for fabricating sub-GR gates in a semiconducting substrate of a dynamic random access memory array, said substrate having a deep trench, a shallow trench isolation, and nitride seal regions formed thereon; comprising the steps of: depositing a sacrificial spacer on said semiconductor substrate; etching a recess in a selective portion of said sacrificial spacer; filling said recess with insulating material to form a column-shaped structure having opposing sides; removing the remaining portion of said sacrificial spacer; etching a trench along each side of said column-shaped structure of insulating material; and filling trenches with conductive material to form a pair of trench gates.
Claim 3
Dependent Claim
52 words
The process according to claim 1, wherein said step of depositing a sacrificial spacer on said semiconductor substrate comprises the steps of: depositing a layer of oxide on said semiconductor substrate; depositing a layer of nitride on said layer of oxide; and depositing a layer of polysilicon on said layer of oxide.
Claim 4
Dependent Claim
87 words
The process according to claim 2, wherein said step of etching a recess in a selective portion of said sacrificial spacer comprises the steps of: depositing a resist layer on said layer of polysilicon; simultaneously etching said layer of polysilicon and said layer of nitride forming a trench therein, said trench extending to the surface of said layer of oxide; removing said resist layer; consecutively depositing a liner of oxide and a layer of nitride in said trench; and selectively etching a recess in said nitride layer.
Claim 5
Dependent Claim
28 words
The process according to claim 1, further including the formation of surface straps after said step of forming a recess in a selective portion of said sacrificial spacer.
Claim 6
Dependent Claim
49 words
The process according to claim 4, wherein said step of forming surface straps includes the steps of: depositing a surface strap masking layer on said substrate; simultaneously selectively etching said nitride seals in said substrate and a recess into said layer of oxide; and removing said surface strap mask.
Claim 7
Dependent Claim
54 words
The process according to claim 1, wherein said step of filling said recess with insulating material to form a column-shaped structure having opposite sides comprises: depositing a layer of polysilicon in said recess; depositing a layer of oxide on said layer of polysilicon; and depositing a layer of polysilicon on said layer of oxide.
Claim 8
Dependent Claim
53 words
The process according to claim 3, wherein said step of removing the remaining portion of said sacrificial spacer includes the steps of: depositing a masking layer on said semiconductor substrate; selectively etching said oxide and said nitride layers initially deposited on said semiconductor substrate; removing said masking layer; and removing said nitride layer.
Claim 9
Dependent Claim
75 words
The process according to claim 1, wherein said step of etching a trench along each side of said column-shaped structure of insulating material includes the steps of: etching trenches into said semiconductor substrate; lining said trenches with oxide; selectively etching said oxide liner around said nitride seals; simultaneously removing said nitride layer, said oxide liner and portions of said oxide layer initially deposited on said substrate; and depositing an oxide layer over the resulting structure.
Claim 10
Dependent Claim
95 words
The process according to claim 1, wherein said step of filling said trenches with conductive material to form a pair of trench gates includes the steps of: depositing a gate oxide layer in said trenches; depositing a polysilicon gate conductor layer on said gate oxide layer; masking and selectively etching said polysilicon gate conductor layer in order to form gate conductors from said polysilicon gate conductor layer; removing said masking layer; depositing a nitride later on the resulting structure; and selectively etching said nitride layer such that it remains disposed only on said gate conductors.
Claim 11
Dependent Claim
17 words
The process according to claim 1, further including the step of forming junctions in said semiconductor substrate.
Claim 12
Dependent Claim
44 words
The process according to claim 10, wherein said step of forming junctions in said semiconductor substrate includes the steps of: depositing a nitride liner over said semiconductor substrate; forming a middle of line dielectricum in said substrate; and planarizing said middle of line dielectricum.
Claim 13
Dependent Claim
19 words
The process according to claim 1, further including the step of forming bit line contacts in said semiconductor substrate.
Claim 14
Dependent Claim
32 words
The process according to claim 12, wherein said step of forming bit line contacts in said semiconductor substrate includes the step of etching said semiconductor substrate with a selective oxide-to-nitride etching process.
Claim 15
Dependent Claim
24 words
The process according to claim 1, further including the step of forming contact to gate and contact to diffusion areas in said semiconductor substrate.
Claim 16
Dependent Claim
21 words
The process according to claim 1, further including the step of depositing a plurality of metal layers over said semiconductor substrate.
Claim 17
Dependent Claim
25 words
The process according to claim 15 wherein said step of depositing a plurality of metal layers is limited to the deposition of three metal layers.
Claim 18
Dependent Claim
28 words
The process according to claim 16, wherein the metals of said metal layers are selected from the group consisting of tungsten, tungsten silicide, titanium, titanium silicide and copper.
Claim 19
Dependent Claim
28 words
The process according to claim 1, further including a final pad opening process in said semiconductor substrate which completes the structure of said dynamic random access memory array.
Claim 20
Dependent Claim
36 words
The process according to claim 9, wherein said step of depositing a polysilicon gate conductor layer on said gate oxide layer further includes the deposition of a gate conductor in-situ-doped polysilicon layer containing a silicide/metal core.
Claim 21
Dependent Claim
109 words
The method according to claim 19, wherein said step of forming a gate conductor in-situ-doped polysilicon layer containing a metal/silicide core comprises the steps of: depositing a layer of polysilicon on said layer of gate oxide in said trenches; depositing a layer of gate conductor in-situ-doped polysilicon on said layer of polysilicon; depositing a layer of metal silicide on said layer of polysilicon; depositing a layer of metal on said layer of metal silicide; simultaneously etching said layer of metal and said layer of metal silicide such that they reside below the surface of said substrate; and depositing a layer of gate conductor in-situ-doped polysilicon on the resulting structure.
Claim 22
Dependent Claim
22 words
The method according to claim 20, wherein said metal silicide is selected from the group consisting of tungsten silicide and titanium silicide.
Claim 23
Dependent Claim
20 words
The method according to claim 20, wherein said metal is selected from the group consisting of tungsten, titanium and copper.
Claim 24
Dependent Claim
13 words
The method according to claim 20, wherein said metal silicide is tungsten silicide.
Claim 25
Dependent Claim
11 words
The method according to claim 20, wherein said metal is tungsten.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-10-06 | 2001-04-07 | 2001-10-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-10-06 | 2005-04-07 | 2005-10-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-10-06 | 2009-04-07 | 2009-10-07 | $7700.00 | Window Closed / Lapsed |