US5670407A
Expired / Lapsed
US
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Method of fabricating a toothed-shape capacitor node in a semiconductor DRAM circuit
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 1997-01-30
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Granted: 1997-09-23
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Expires: 2017-01-30
Abstract
Abstract The present invention is a method of fabricating a toothed-shape capacitor node in a semiconductor DRAM circuit. This invention utilizes dot silicon as an etching mask. Next, the polysilicon is oxidized and removed to form trenches in the bottom storage of the capacitor. Thus, a toothed-shape capacitor node is formed in semiconductor circuit.
Inventors
- 👤 Horng-Huei Tseng
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 01:45
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10D; H10D1/00; H10D1/01; H10D1/041; H10D1/043; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/716; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/947
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
94 words
A method for forming a toothed-shaped capacitor node on a semiconductor substrate, said method comprising: forming a polysilicon layer over said semiconductor substrate; forming a dielectric layer on said polysilicon layer; forming dot silicon on said dielectric layer; removing said dielectric layer left uncovered by said dot polysilicon; oxidizing said dot silicon and said polysilicon layer uncovered by said second dielectric layer to form a poly-oxide layer; removing said poly-oxide layer to form trenches in said polysilicon layer; removing said dielectric layer; and patterning and etching said polysilicon layer to form a capacitor node.
Claim 2
Independent Claim
94 words
A method for forming a toothed-shaped capacitor node on a semiconductor substrate, said method comprising: forming a polysilicon layer over said semiconductor substrate; forming a dielectric layer on said polysilicon layer; forming dot silicon on said dielectric layer; removing said dielectric layer left uncovered by said dot polysilicon; oxidizing said dot silicon and said polysilicon layer uncovered by said second dielectric layer to form a poly-oxide layer; removing said poly-oxide layer to form trenches in said polysilicon layer; removing said dielectric layer; and patterning and etching said polysilicon layer to form a capacitor node.
Claim 3
Dependent Claim
15 words
The method according to claim 1, wherein said polysilicon layer is a doped polysilicon layer.
Claim 4
Dependent Claim
22 words
The method according to claim 1, wherein said polysilicon layer has a thickness in a range of about 3000 to 8000 angstroms.
Claim 5
Dependent Claim
14 words
The method according to claim 1, wherein said dielectric layer is a nitride layer.
Claim 6
Dependent Claim
22 words
The method according to claim 1, wherein said dielectric layer has a thickness of a range of about 100 to 400 angstroms.
Claim 7
Dependent Claim
14 words
The method according to claim 1, wherein said dot silicon comprises Hemi-Spherical Grain polysilicon.
Claim 8
Dependent Claim
14 words
The method according to claim 1, wherein said dot silicon comprises single crystal silicon.
Claim 9
Dependent Claim
22 words
The method according to claim 1, wherein said dot silicon has a diameter of a range of about 50 to 500 angstroms.
Claim 10
Dependent Claim
22 words
The method according to claim 1, wherein said dot silicon has a space of a range of about 100 to 1000 angstroms.
Claim 11
Dependent Claim
22 words
The method according to claim 1, wherein removing said dielectric layer is removed by using an etching process with an oxide etchant.
Claim 12
Dependent Claim
26 words
The method according to claim 1, wherein said poly-oxide layer has a thickness of a range of about 2000 to 7000 angstroms on said polysilicon layer.
Claim 13
Dependent Claim
17 words
The method according to claim 1, wherein removing said poly-oxide layer is done by an etching process.
Claim 14
Dependent Claim
17 words
The method according to claim 1, wherein removing said dielectric layer is done by an etching process.
Claim 15
Dependent Claim
25 words
The method according to claim 1, wherein said trenches in said polysilicon layer have a depth of a range of about 1000 to 4000 angstroms.
Claim 16
Independent Claim
97 words
A method for forming toothed-shaped capacitor node on a semiconductor substrate, said method comprising the steps of: forming a polysilicon layer over said semiconductor substrate; forming a dielectric layer on said polysilicon layer; forming dot silicon on said dielectric layer; etching said dielectric layer left uncovered by said dot silicon until the polysilicon layer is reached; oxidizing said polysilicon layer uncovered by said dielectric layer to form a poly-oxide layer; removing said poly-oxide layer to form trenches in said polysilicon layer; removing said dielectric layer; and patterning and etching said polysilicon layer to form a capacitor node.
Claim 17
Independent Claim
97 words
A method for forming toothed-shaped capacitor node on a semiconductor substrate, said method comprising the steps of: forming a polysilicon layer over said semiconductor substrate; forming a dielectric layer on said polysilicon layer; forming dot silicon on said dielectric layer; etching said dielectric layer left uncovered by said dot silicon until the polysilicon layer is reached; oxidizing said polysilicon layer uncovered by said dielectric layer to form a poly-oxide layer; removing said poly-oxide layer to form trenches in said polysilicon layer; removing said dielectric layer; and patterning and etching said polysilicon layer to form a capacitor node.
Claim 18
Dependent Claim
22 words
The method of claim 15 wherein said dot silicon is oxidized with said polysilicon layer and is removed with said poly-oxide layer.
Claim 19
Dependent Claim
12 words
The method of claim 15 wherein said dielectric layer is a nitride.
References Cited (Backward Citations)
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