High capacitance capacitor manufacturing method

Claim 1

A capacitor manufacturing method, comprising the steps of: forming a first insulating film including a contact hole on a surface of a semiconductor substrate; forming a first conductive layer on said first insulating film while burying said contact hole; forming a first HSG film having hemispherical particles of a first size on a surface of said first conductive layer; sequentially forming a second insulating film and a third insulating film on a surface of said first HSG film; patterning said second insulating film and said third insulating film; etching said first HSG film and said first conductive layer by using said patterned third insulating film and second insulating film as a mask to form a lower storage node having said first conductive layer and said HSG film; removing said third insulating film; forming a second HSG film having hemispherical particles of substantially the same size as the size of the hemispherical particles in the first HSG film on said second insulating film and said lower storage node; removing said second HSG film formed around said lower storage node; and removing said second insulating film and at the same time removing a portion of said first insulating film so that said first conductive layer does not contact said first insulating film.