US5393373A
Expired / Lapsed
US
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Methods of patterning and manufacturing semiconductor devices
Assignee: SK Hynix Inc
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Filing: 1993-10-12
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Granted: 1995-02-28
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Expires: 2013-10-12
Abstract
Abstract Methods of hyperfine patterning and manufacturing semiconductor devices. Steps in accordance with the present invention include coating a hemisphere particle layer having hills and valleys on a layer to be etched, the hemisphere particle layer having an etch selectivity higher than that of the first layer, filling the valleys of the hemisphere particle layer with a second layer having an etch selectivity higher than that of the hemisphere particle layer, and etching back the hills of the hemisphere particle layer to expose the first layer by using the second layer as a mask, and etching the first layer. By virtue of the hemisphere particle layer having alternating hills and valleys, it is possible to accomplish a hyperfine patterning of about 0.1 μm. Since the mean size and the density of hills and valleys of the hemisphere layer can be controlled, the pattern size also can be controlled. Where the present invention is applied to capacitors of semiconductor memory elements, the capacitor node surface area can be increased, depending on the etched back depth of a polysilicon layer.
Inventors
- 👤 Young K. Jun
- 👤 Sa K. Ra
- 👤 Dong W. Kim
- 👤 Hyun H. Seo
- 👤 Sung C. Kim
- 👤 Jun K. Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 06:21
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10B12/30; H10B12/31; H10B12/318; H10D; H10D1/00; H10D1/01; H10D1/041; H10D1/043; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/716; H10P; H10P76/00; H10P76/40; H10P76/408; H10P76/4085; Y; Y10; Y10S; Y10S438/00; Y10S438/942
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
60 words
A patterning method for a semiconductor device comprising the steps of: (1) forming a hemisphere polysilicon particle layer having hills and valleys on a first layer to be etched; and (2) etching portions of the first layer beneath the valleys of the hemisphere polysilicon particle layer, wherein the hills of the hemisphere polysilicon particle layer are used as a mask.
Claim 2
Dependent Claim
60 words
A patterning method for a semiconductor device comprising the steps of: (1) forming a hemisphere polysilicon particle layer having hills and valleys on a first layer to be etched; and (2) etching portions of the first layer beneath the valleys of the hemisphere polysilicon particle layer, wherein the hills of the hemisphere polysilicon particle layer are used as a mask.
Claim 3
Dependent Claim
38 words
The patterning method of claim 1, wherein layer on the first layer for a controlled time, wherein the pitch between the hills and valleys of the hemisphere polysilicon particle layer is determined by the controlled time of coating.
Claim 4
Dependent Claim
40 words
The patterning method of claims 1 or 2, wherein step (a) further comprises the step of etching back the hemisphere polysilicon particle layer, wherein the pitch between the hills or valleys of the hemisphere polysilicon particle layer is controllably altered.
Claim 5
Dependent Claim
25 words
The patterning method of claim 1, wherein the hemisphere polysilicon particle layer has an etch selectivity higher than the etch selectivity of the first layer.
Claim 6
Dependent Claim
20 words
The patterning method of claim 1, wherein the hemisphere polysilicon particle layer is formed by a chemical vapor deposition process.
Claim 7
Dependent Claim
82 words
The patterning method of claim 1, wherein the polysilicon comprising the hemisphere polysilicon particle layer is formed with an LPCVD process using SiH 4 at a temperature of about 560° C. to about 600° C. and under a pressure of about 0.1 Torr to about 1.5 Torr, or is formed with an LPCVD process using Si 2 H 6 at a temperature of about 570° C. to about 610° C. and under a pressure of about 0.1 Torr to about 1.5 Torr.
Claim 8
Dependent Claim
87 words
A patterning method for a semiconductor device comprising the steps of: (a) forming a first layer; (b) forming a second layer on the first layer; (c) forming a hemisphere polysilicon particle layer having hills and valleys on the second layer; (d) etching portions of the second layer beneath the valleys of the hemisphere polysilicon particle layer to expose portions of the first layer, wherein the hills of the hemisphere polysilicon particle layer are used as a mask; and (e) etching the exposed portions of the first layer.
Claim 9
Dependent Claim
87 words
A patterning method for a semiconductor device comprising the steps of: (a) forming a first layer; (b) forming a second layer on the first layer; (c) forming a hemisphere polysilicon particle layer having hills and valleys on the second layer; (d) etching portions of the second layer beneath the valleys of the hemisphere polysilicon particle layer to expose portions of the first layer, wherein the hills of the hemisphere polysilicon particle layer are used as a mask; and (e) etching the exposed portions of the first layer.
Claim 10
Dependent Claim
46 words
The patterning method of claim 7, wherein step (c) comprises coating the hemisphere polysilicon particle layer on the first layer for a controlled time, wherein the pitch between the hills and valleys of the hemisphere polysilicon particle layer is determined by the controlled time of coating.
Claim 11
Dependent Claim
40 words
The patterning method of claims 7 or 8, wherein step (c) further comprises the step of etching back the hemisphere polysilicon particle layer, wherein the pitch between the hills or valleys of the hemisphere polysilicon particle layer is controllably altered.
Claim 12
Dependent Claim
43 words
The patterning method of claim 7, wherein the second layer has an etch selectivity higher than the etch selectivity of the first layer, and wherein the hemisphere polysilicon particle layer has an etch selectivity higher than the etch selectivity of the second layer.
Claim 13
Dependent Claim
20 words
The patterning method of claim 7, wherein the hemisphere polysilicon particle layer is formed by a chemical vapor deposition process.
Claim 14
Dependent Claim
82 words
The patterning method of claim 7, wherein the polysilicon comprising the hemisphere polysilicon particle layer is formed with an LPCVD process using SiH 4 at a temperature of about 560° C. to about 600° C. and under a pressure of about 0.1 Torr to about 1.5 Torr, or is formed with an LPCVD process using Si 2 H 6 at a temperature of about 570° C. to about 610° C. and under a pressure of about 0.1 Torr to about 1.5 Torr.
Claim 15
Independent Claim
181 words
A method of manufacturing a capacitor on a semiconductor substrate, wherein the capacitor has a plurality of protrusions, comprising the steps of: (a) forming a capacitor node contact on the semiconductor substrate, forming a first polysilicon layer over the capacitor node contact; (b) forming an insulation layer on the first polysilicon layer and forming a hemisphere particle layer having hills and valleys on the insulation layer; (c) etching portions of the insulation layer beneath the valleys of the hemisphere particle layer to expose portions of the first polysilicon layer, wherein the hills of the hemisphere particle layer are used as a mask, wherein the insulation layer has a plurality of protrusions formed therein having upper portions; (d) filling the etched portions of the second insulation layer with a second polysilicon layer, wherein the upper portions of the protrusions of the second insulation are exposed; and (e) removing the insulation layer, wherein a plurality of protrusions of the second polysilicon layer are formed, and forming a dielectric layer and plate polysilicon layer on the plurality of protrusions of the second polysilicon layer.
Claim 16
Independent Claim
181 words
A method of manufacturing a capacitor on a semiconductor substrate, wherein the capacitor has a plurality of protrusions, comprising the steps of: (a) forming a capacitor node contact on the semiconductor substrate, forming a first polysilicon layer over the capacitor node contact; (b) forming an insulation layer on the first polysilicon layer and forming a hemisphere particle layer having hills and valleys on the insulation layer; (c) etching portions of the insulation layer beneath the valleys of the hemisphere particle layer to expose portions of the first polysilicon layer, wherein the hills of the hemisphere particle layer are used as a mask, wherein the insulation layer has a plurality of protrusions formed therein having upper portions; (d) filling the etched portions of the second insulation layer with a second polysilicon layer, wherein the upper portions of the protrusions of the second insulation are exposed; and (e) removing the insulation layer, wherein a plurality of protrusions of the second polysilicon layer are formed, and forming a dielectric layer and plate polysilicon layer on the plurality of protrusions of the second polysilicon layer.
Claim 17
Independent Claim
214 words
A method of manufacturing a capacitor on a semiconductor substrate, wherein the capacitor has a plurality of protrusions, comprising the steps of: (a) forming a capacitor node contact on the semiconductor substrate, forming a node polysilicon layer over the capacitor node contact; (b) forming an insulation layer on the storage node polysilicon layer, and forming a hemisphere particle layer having hills and valleys on the insulation layer; (c) etching the portions of the insulation layer beneath the valleys of the hemisphere particle layer to expose portions of the node polysilicon layer, wherein the hills of the hemisphere particle layer are used as a mask, wherein the insulation layer has a plurality of protrusions formed therein having upper portions and side surface portions; (d) forming a storage polysilicon layer on the overall surface, and anisotropically etching the storage polysilicon layer to expose the upper portions of the protrusions of the insulation layer, wherein portions of the storage polysilicon layer remain as side walls on the side surfaces of the protrusions of the insulation layer; and (e) removing the insulation layer, wherein protrusions of the storage polysilicon layer are formed on the node polysilicon layer, forming a dielectric layer and plate polysilicon layer on the protrusions of the storage polysilicon layer and the node polysilicon layer.
Claim 18
Independent Claim
214 words
A method of manufacturing a capacitor on a semiconductor substrate, wherein the capacitor has a plurality of protrusions, comprising the steps of: (a) forming a capacitor node contact on the semiconductor substrate, forming a node polysilicon layer over the capacitor node contact; (b) forming an insulation layer on the storage node polysilicon layer, and forming a hemisphere particle layer having hills and valleys on the insulation layer; (c) etching the portions of the insulation layer beneath the valleys of the hemisphere particle layer to expose portions of the node polysilicon layer, wherein the hills of the hemisphere particle layer are used as a mask, wherein the insulation layer has a plurality of protrusions formed therein having upper portions and side surface portions; (d) forming a storage polysilicon layer on the overall surface, and anisotropically etching the storage polysilicon layer to expose the upper portions of the protrusions of the insulation layer, wherein portions of the storage polysilicon layer remain as side walls on the side surfaces of the protrusions of the insulation layer; and (e) removing the insulation layer, wherein protrusions of the storage polysilicon layer are formed on the node polysilicon layer, forming a dielectric layer and plate polysilicon layer on the protrusions of the storage polysilicon layer and the node polysilicon layer.
Claim 19
Independent Claim
164 words
A method of manufacturing a capacitor on a semiconductor substrate, wherein the capacitor has a plurality of protrusions, comprising the steps of: (a) forming a capacitor node contact on the semiconductor substrate, and forming a storage node polysilicon layer over the capacitor node contact; (b) forming an insulation layer on the storage node polysilicon layer, and forming a hemisphere particle layer having hills and valleys on the insulation layer; (c) etching the portions of the insulation layer beneath the valleys of the hemisphere particle layer to expose the storage node polysilicon layer, wherein the hills of the hemisphere particle layer are used as a mask, wherein a plurality of protrusions of the insulation layer is formed; (d) etching the exposed portions of the storage node polysilicon layer to a predetermined depth, wherein the protrusions of the insulation layer are used as a mask; and (e) removing the insulation layer and forming a dielectric layer and plate polysilicon layer on the storage node polysilicon layer.
Claim 20
Independent Claim
164 words
A method of manufacturing a capacitor on a semiconductor substrate, wherein the capacitor has a plurality of protrusions, comprising the steps of: (a) forming a capacitor node contact on the semiconductor substrate, and forming a storage node polysilicon layer over the capacitor node contact; (b) forming an insulation layer on the storage node polysilicon layer, and forming a hemisphere particle layer having hills and valleys on the insulation layer; (c) etching the portions of the insulation layer beneath the valleys of the hemisphere particle layer to expose the storage node polysilicon layer, wherein the hills of the hemisphere particle layer are used as a mask, wherein a plurality of protrusions of the insulation layer is formed; (d) etching the exposed portions of the storage node polysilicon layer to a predetermined depth, wherein the protrusions of the insulation layer are used as a mask; and (e) removing the insulation layer and forming a dielectric layer and plate polysilicon layer on the storage node polysilicon layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-02-27 | 1998-08-29 | 1999-02-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-02-27 | 2002-08-29 | 2003-02-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-02-27 | 2006-08-29 | 2007-02-28 | $7700.00 | Window Closed / Lapsed |