Scalable flash eeprom memory cell and array

Claim 2

An electrically erasable and programmable read only memory array, said memory array comprising: a semiconductor substrate; a plurality of floating gate memory transistors arranged in a matrix of a plurality of rows and a plurality of columns, each memory transistor having four terminals; a plurality of first column lines, each first column line connecting a first terminal of all the memory transistors arranged in the same column; a plurality of first row lines, each first row line connecting a second terminal of all the memory transistors arranged in the same row; a plurality of second row lines, each second row line connecting a third terminal of all the memory transistors arranged in the same row; a plurality of third row lines, each third row line connecting a fourth terminal of all the memory transistors arranged in the same row; said memory transistors arranged in the same row having the same first, second and third row lines; column decoding means for receiving a column address signal and for selecting one of a plurality of first column lines in response thereto; and row decoding means for receiving a row address signal and for selecting one of a plurality of first, second and third row lines in response thereto.

Claim 3

The array of claim 1 wherein each memory transistor further comprises: a drain in said semiconductor substrate as said first terminal; a source in said semiconductor substrate as said fourth terminal; a channel between said source and said drain in said substrate; a select gate, as said second terminal, said select gate over said substrate and insulated therefrom and extending over a first portion of said channel; a floating gate having a first portion over said select gate and insulated therefrom, and having a second portion insulated from said substrate and extending over a second portion of said channel and over a portion of said source and lies between said select gate and said source; and a control gate, as said third terminal, over said floating gate, and insulated therefrom.

Claim 4

The array of claim 1 further comprising: high voltage decoding means for selecting one of said second and third row lines.

Claim 5

The array of claim 3 further comprising: high voltage source, coupled to said high voltage decoding means, for supplying a high voltage source to a selected second and third row line.

Claim 6

The array of claim 2 wherein said select gate of each memory transistor has a portion over said drain and is insulated therefrom.

Claim 7

The array of claim 2 wherein said control gate of each memory transistor has a portion over said select gate and is insulated therefrom.

Claim 8

The array of claim 2 wherein said control gate of each memory transistor has a first edge aligned with an edge of said select gate, and a second edge aligned with an edge of said floating gate.

Claim 9

The array of claim 6 wherein said control gate of each memory transistor has a portion extending over a portion of said source and is insulated therefrom.

Claim 10

The array of claim 1 further comprising: a plurality of spaced apart second column lines, each second column line connecting a first terminal of all the memory transistors arranged in the same column; means for connecting said second column lines to a voltage source.

Claim 11

An electrically erasable and programmable read only memory array, said memory array comprising: a semiconductor substrate; a plurality of floating gate memory transistors arranged in a matrix of a plurality of rows and a plurality of columns, each memory transistor having four terminals; a plurality of first column lines, each first column line connecting a first terminal of all the memory transistors arranged in the same column; a plurality of second column lines, each second column line connecting a second terminal of all the memory transistors arranged in the same column; a plurality of third column lines, each third column line connecting a fourth terminal of all the memory transistors arranged in the same column; a plurality of row lines, each row line connecting a third terminal of all the memory transistors arranged in the same row; said memory transistors arranged in the same column having the same first, second and third column lines, with a third column line for the memory transistors arranged in a column being common with a first column line for the memory transistors arranged in an adjacent column; column decoding means for receiving a column address signal and for selecting one of a plurality of first and second column lines in response thereto; high voltage column decoding means coupled to said plurality of first column lines for selecting one of said first column lines; row decoding means for receiving a row address signal and for selecting one of a plurality of row lines in response thereto; high voltage row decoding means coupled to said plurality of row lines for selecting one of said row lines; and high voltage source, coupled to said high voltage column decoding means for supplying a high voltage source to a selected first column line, and coupled to said high voltage row decoding means for supplying a high voltage source to a select row line.

Claim 12

An electrically erasable and programmable read only memory array, said memory array comprising: a semiconductor substrate; a plurality of floating gate memory transistors arranged in a matrix of a plurality of rows and a plurality of columns, each memory transistor having four terminals; a plurality of first column lines, each first column line connecting a first terminal of all the memory transistors arranged in the same column; a plurality of second column lines, each second column line connecting a second terminal of all the memory transistors arranged in the same column; a plurality of third column lines, each third column line connecting a fourth terminal of all the memory transistors arranged in the same column; a plurality of row lines, each row line connecting a third terminal of all the memory transistors arranged in the same row; said memory transistors arranged in the same column having the same first, second and third column lines, with a third column line for the memory transistors arranged in a column being common with a first column line for the memory transistors arranged in an adjacent column; column decoding means for receiving a column address signal and for selecting one of a plurality of first and second column lines in response thereto; high voltage column decoding means coupled to said plurality of first column lines for selecting one of said first column lines; row decoding means for receiving a row address signal and for selecting one of a plurality of row lines in response thereto; high voltage row decoding means coupled to said plurality of row lines for selecting one of said row lines; and high voltage source, coupled to said high voltage column decoding means for supplying a high voltage source to a selected first column line, and coupled to said high voltage row decoding means for supplying a high voltage source to a select row line.

Claim 13

The array of claim 10 wherein each memory transistor further comprises: a drain in said semiconductor substrate as said first terminal; a source in said semiconductor substrate as said fourth terminal; a channel between said source and said drain in said substrate; a select gate, as said second terminal, said select gate over said substrate and insulated therefrom and extending over a first portion of said channel; a floating gate having a first portion over said select gate and insulated therefrom, and having a second portion insulated from said substrate and extending over a second portion of said channel and over a portion of said source and lies between said select gate and said source; and a control gate, as said third terminal, over said floating gate, and insulated therefrom.

Claim 14

The array of claim 11 wherein said control gate of each memory transistor has a portion over said select gate and is insulated therefrom.

Claim 15

The array of claim 12 wherein said control gate of each memory transistor extends over a portion of said source and is insulated therefrom.

Claim 16

The array of claim 11 wherein said control gate of each memory transistor extends over a portion of said source and is insulated therefrom.

Claim 17

The array of claim 14 wherein said floating gate of each memory transistor has an edge aligned with an edge of select gate, over which the floating gate is positioned.

Claim 18

An electrically erasable and programmable read only memory array, said memory array comprising: a semiconductor substrate; a plurality of floating gate memory transistors arranged in a matrix of a plurality of rows and a plurality of columns, each memory transistor having four terminals; a plurality of first column lines, each first column line connecting a first terminal of all the memory transistors arranged in the same column; a plurality of second column lines, each second column line connecting a second terminal of all the memory transistors arranged in the same column; a plurality of third column lines, each third column line connecting a fourth terminal of all the memory transistors arranged in the same column; a plurality of row lines, each row line connecting a third terminal of all the memory transistors arranged in the same row; said memory transistors arranged in the same column having the same first, second and third column lines, with a third column line for the memory transistors arranged in a column being common with a third column line for the memory transistors arranged in a first adjacent column, and with a first column line for the memory transistors arranged in a column being common with a first column line for the memory transistors arranged in a second adjacent column; column decoding means for receiving a column address signal and for selecting one of a plurality of first and second column lines in response thereto; high voltage column decoding means for selecting one of said first column lines; row decoding means for receiving a row address signal and for selecting one of a plurality of row lines in response thereto; high voltage row decoding means for selecting one of said row lines; and high voltage source, coupled to said high voltage column decoding means for supplying a high voltage source to a selected first column line, and coupled to said high voltage row decoding means for supplying a high voltage source to a select row line.

Claim 19

An electrically erasable and programmable read only memory array, said memory array comprising: a semiconductor substrate; a plurality of floating gate memory transistors arranged in a matrix of a plurality of rows and a plurality of columns, each memory transistor having four terminals; a plurality of first column lines, each first column line connecting a first terminal of all the memory transistors arranged in the same column; a plurality of second column lines, each second column line connecting a second terminal of all the memory transistors arranged in the same column; a plurality of third column lines, each third column line connecting a fourth terminal of all the memory transistors arranged in the same column; a plurality of row lines, each row line connecting a third terminal of all the memory transistors arranged in the same row; said memory transistors arranged in the same column having the same first, second and third column lines, with a third column line for the memory transistors arranged in a column being common with a third column line for the memory transistors arranged in a first adjacent column, and with a first column line for the memory transistors arranged in a column being common with a first column line for the memory transistors arranged in a second adjacent column; column decoding means for receiving a column address signal and for selecting one of a plurality of first and second column lines in response thereto; high voltage column decoding means for selecting one of said first column lines; row decoding means for receiving a row address signal and for selecting one of a plurality of row lines in response thereto; high voltage row decoding means for selecting one of said row lines; and high voltage source, coupled to said high voltage column decoding means for supplying a high voltage source to a selected first column line, and coupled to said high voltage row decoding means for supplying a high voltage source to a select row line.

Claim 20

The array of claim 16 wherein each memory transistor further comprises: a drain in said semiconductor substrate as said first terminal; a source in said semiconductor substrate as said fourth terminal; a channel between said source and said drain in said substrate,; a select gate, as said second terminal, said select gate over said substrate and insulated therefrom and extending over a first portion of said channel; a floating gate having a first portion over said select gate and insulated therefrom, and having a second portion insulated from said substrate and extending over a second portion of said channel and over a portion of said source and lies between said select gate and said source; and a control gate, as said third terminal, over said floating gate, and insulated therefrom.

Claim 21

The array of claim 17 wherein said control gate of each memory transistor has a portion over said select gate and is insulated therefrom.

Claim 22

The array of claim 18 wherein said control gate of each memory transistor extends over a portion of said source and is insulated therefrom.

Claim 23

The array of claim 17 wherein said control gate of each memory transistor extends over a portion of said source and is insulated therefrom.

Claim 24

The array of claim 20 wherein said floating gate of each memory transistor has an edge aligned with an edge of select gate, over which the floating gate is position.

Claim 25

An electrically erasable and programmable read only memory array, said memory array comprising: a semiconductor substrate; a plurality of first column lines; a plurality of first floating gate memory cells, each having a first terminal, and arranged in a plurality of columns; each first column line connecting said first terminal of all the first floating gate memory cells arranged in the same column; a plurality of second column lines, interspersed among said plurality of first column lines, a plurality of second floating gate memory cells, each having a first terminal, and arranged in a plurality of columns; each second column line connecting a first terminal of all the second floating gate memory cells arranged in the same column; said second floating gate memory cells arranged in the same column being programmed to the same state; means for connecting said second column lines to a voltage source, a plurality of first row lines, each first row line connecting a second terminal of all the floating gate memory cells arranged in the same row; said floating gate memory cells arranged in the same row having the same first row lines; column decoding means connected to said first column lines and for receiving a column address signal and for selecting one of a plurality of first column lines in response thereto; and row decoding means for receiving a row address signal and for selecting one of a plurality of first, row lines in response thereto.

Claim 26

An electrically erasable and programmable read only memory array, said memory array comprising: a semiconductor substrate; a plurality of first column lines; a plurality of first floating gate memory cells, each having a first terminal, and arranged in a plurality of columns; each first column line connecting said first terminal of all the first floating gate memory cells arranged in the same column; a plurality of second column lines, interspersed among said plurality of first column lines, a plurality of second floating gate memory cells, each having a first terminal, and arranged in a plurality of columns; each second column line connecting a first terminal of all the second floating gate memory cells arranged in the same column; said second floating gate memory cells arranged in the same column being programmed to the same state; means for connecting said second column lines to a voltage source, a plurality of first row lines, each first row line connecting a second terminal of all the floating gate memory cells arranged in the same row; said floating gate memory cells arranged in the same row having the same first row lines; column decoding means connected to said first column lines and for receiving a column address signal and for selecting one of a plurality of first column lines in response thereto; and row decoding means for receiving a row address signal and for selecting one of a plurality of first, row lines in response thereto.

Claim 27

The array of claim 22 wherein said each of said second floating gate memory cells has a width wider than each of said first floating gate memory cells.