Abstract A modified hydrogen silsesquioxane (HSQ) precursor is disclosed, along with methods for depositing such a precursor on a semiconductor substrate and a semiconductor device having a dielectric thin film deposited from such a precursor. The method comprises coating a semiconductor substrate 10, which typically comprises conductors 12, with a film of a modified HSQ film precursor. The HSQ film precursor comprises a hydrogen silsesquioxane resin and a modifying agent, preferably selected from the group consisting of alkyl alkoxysilanes, fluorinated alkyl alkoxysilanes, and combinations thereof. The method further comprises curing film 14, wherein the inclusion of the modifying agent inhibits oxidation and/or water absorption by the film during and/or after curing. It is believed that the modifying agent modifies film surface 16 to produce this effect. Films produced according to the present invention apparently have repeatable dielectric properties for drying and curing conditions which produced widely varying properties for unmodified films.
A modified hydrogen silsesquioxane film precursor for coating a semiconductor substrate, said modified hydrogen silsesquioxane film precursor comprising: hydrogen silsesquioxane resin; and a modifying agent selected from the group consisting of methyl trimethoxysilane, 1,2-bis(trimethoxysilyl)ethane, trimethylchlorosilane, methyltrichlorosilane, and (tri-3,3,3 fluoropropyl)trimethoxysilane; in a resin to modifying agent volume ratio between 40:1 and 2:8.
Claim 2
Dependent Claim
51 words
A modified hydrogen silsesquioxane film precursor for coating a semiconductor substrate, said modified hydrogen silsesquioxane film precursor comprising: hydrogen silsesquioxane resin; and a modifying agent selected from the group consisting of methyl trimethoxysilane, 1,2-bis(trimethoxysilyl)ethane, trimethylchlorosilane, methyltrichlorosilane, and (tri-3,3,3 fluoropropyl)trimethoxysilane; in a resin to modifying agent volume ratio between 40:1 and 2:8.
Claim 3
Dependent Claim
18 words
The film precursor of claim 1, wherein said modified hydrogen silsesquioxane film precursor further comprises methyl isobutyl ketone.