US5665201A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High removal rate chemical-mechanical polishing
Assignee: GlobalFoundries Inc
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Filing: 1995-06-06
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Granted: 1997-09-09
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Expires: 2015-06-06
Abstract
Abstract Chemical-mechanical polishing is conducted under aggressive conditions, preferably with aggressive conditioning of the polishing pad, to effect uniform planarization at high removal rates. It is preferred to condition the polishing pad with an abrasive diamond grit wheel and to vary the residence time of the diamond grit for different sections of the polishing pad.
Inventors
- 👤 Kashmir S. Sahota
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 05:35
CPC Classifications
B; B24; B24B; B24B53/00; B24B53/017; B24B37/00; B24B37/04; B24B37/042; H; H10; H10P; H10P95/00; H10P95/06; H10P95/062
Claims Analysis
Total Claims: 34
Claim 1
Independent Claim
110 words
A method of uniformly planarizing a dielectric layer on a semiconductor wafer, which method comprises; conditioning the polishing pad with an abrasive diamond grit wheel, including varying the residence time of the abrasive diamond grit for different sections of the polishing pad; after conditioning the polishing pad chemical-mechanical polishing the dielectric layer on the polishing pad while dispensing a slurry on the polishing pad; rotating the polishing pad at a rate of about 10 to about 100 rpm; and applying a pressure of about 6 to about 15 psi to the semiconductor wafer, whereby the dielectric layer is removed at a rate of about 3,000 Å/min. to about 12,000 Å/min.
Claim 2
Independent Claim
110 words
A method of uniformly planarizing a dielectric layer on a semiconductor wafer, which method comprises; conditioning the polishing pad with an abrasive diamond grit wheel, including varying the residence time of the abrasive diamond grit for different sections of the polishing pad; after conditioning the polishing pad chemical-mechanical polishing the dielectric layer on the polishing pad while dispensing a slurry on the polishing pad; rotating the polishing pad at a rate of about 10 to about 100 rpm; and applying a pressure of about 6 to about 15 psi to the semiconductor wafer, whereby the dielectric layer is removed at a rate of about 3,000 Å/min. to about 12,000 Å/min.
Claim 3
Dependent Claim
13 words
The method according to claim 1, wherein the dielectric layer comprises an oxide.
Claim 4
Dependent Claim
18 words
The method according to claim 2, wherein the dielectric layer comprises silicon dioxide, phosphosilicate glass or boro-phosphosilicate glass.
Claim 5
Dependent Claim
26 words
The method according to claim 2, wherein the dielectric layer comprises an undoped oxide and the removal rate is about 4,000 Å/min. to about 5,000 Å/min.
Claim 6
Dependent Claim
26 words
The method according to claim 2, wherein the dielectric layer is a doped oxide and the removal rate is about 7,500 Å/min. to about 12,000 Å/min.
Claim 7
Dependent Claim
22 words
The method according to claim 5, wherein the dielectric layer comprises silicon dioxide derived from tetraethyl orthosilicate doped with boron and phosphorous.
Claim 8
Dependent Claim
21 words
The method according to claim 2, wherein the oxide is silicon dioxide derived from tetraethyl orthosilicate doped with boron and phosphorous.
Claim 9
Dependent Claim
33 words
The method according to claim 1, comprising planarizing a dielectric layer on each of a plurality of semiconductor wafers sequentially and conditioning the polishing pad prior to chemical-mechanical polishing the first semiconductor wafer.
Claim 10
Dependent Claim
30 words
The method according to claim 1, comprising planarizing a dielectric layer on a plurality of semiconductor wafers sequentially and conditioning the polishing pad prior to chemical-mechanical polishing each semiconductor wafer.
Claim 11
Dependent Claim
70 words
The method according to claim 9, comprising applying a downward force of about 6 to about 8 lbs. on the abrasive diamond grit wheel, rotating the polishing pad at about 15 to about 50 rpm, rotating the abrasive diamond grit wheel at about 20 to about 40 rpm, and sweeping the abrasive diamond grit wheel across the surface of the polishing pad about 3 to about 7 sweeps between wafers.
Claim 12
Dependent Claim
35 words
The method according to claim 10, wherein the residence time of the abrasive diamond grit wheel is greater at the center portion of the polishing pad than at the peripheral portion of the polishing pad.
Claim 13
Dependent Claim
33 words
The method according to claim 11, wherein the residence time is less at a portion of the polishing pad intermediate the center and the peripheral portions than at the center and peripheral portions.
Claim 14
Dependent Claim
12 words
The method according to claim 12, wherein the polishing pad is dome-shaped.
Claim 15
Dependent Claim
51 words
The method according to claim 9, comprising conditioning the polishing pad by moving the abrasive diamond grit wheel across the surface of the polishing pad under pressure for about 10 to about 30 sweeps for about 4 to about 10 minutes prior to initially using the polishing pad for chemical-mechanical polishing.
Claim 16
Dependent Claim
24 words
The method according to claim 14, wherein the number of sweeps is about 15 to about 25 for about 5 to about 9 minutes.
Claim 17
Dependent Claim
20 words
The method according to claim 15, wherein the number of sweeps is about 20 for about 7 to 8 minutes.
Claim 18
Dependent Claim
20 words
The method according to claim 9, further comprising conditioning the polishing pad prior to chemical-mechanical polishing each semiconductor wafer sequentially.
Claim 19
Dependent Claim
15 words
The method according to claim 1, wherein the polishing pad comprises a fibrous polymeric material.
Claim 20
Dependent Claim
16 words
The method according to claim 1, wherein the pressure is about 8 to about 12 psi.
Claim 21
Dependent Claim
13 words
The method according to claim 19, wherein the pressure is about 10 psi.
Claim 22
Dependent Claim
18 words
The method according to claim 1, wherein the polishing pad is rotated in excess of about 30 rpm.
Claim 23
Dependent Claim
19 words
The method according to claim 21, wherein the polishing pad is rotated at about 50 to about 80 rpm.
Claim 24
Dependent Claim
16 words
The method according to claim 22, wherein the polishing pad is rotated at about 65 rpm.
Claim 25
Dependent Claim
71 words
The method according to claim 21, wherein the dielectric material comprises an undoped oxide, the pressure is about 10 psi, the wafer carrier speed is about 10 rpm, the polishing pad is rotated about 65 rpm, the slurry is dispensed at a rate of about 100 to about 200 mil/min. at ambient temperature; and wherein the doped oxide is removed at a rate of about 4,000 Å/min. to about 5,000 Å/min.
Claim 26
Dependent Claim
77 words
The method according to claim 24, wherein the polishing pad is conditioned by sweeping an abrasive diamond grit wheel across the surface of the polishing pad 3 to 7 sweeps with a downward force of about 6 to about 8 lbs., while the polishing pad is rotated at about 15 to about 50 rpm, and the abrasive diamond grit wheel is rotated in the same direction as the polishing pad at about 20 to about 40 rpm.
Claim 27
Dependent Claim
15 words
The method according to claim 1, wherein the slurry is dispensed from a drip tube.
Claim 28
Dependent Claim
21 words
The method according to claim 26, wherein the slurry is dispensed at a rate of about 50 to about 500 ml/min.
Claim 29
Dependent Claim
23 words
The method according to claim 1, wherein the wafer is held in a carrier rotating in the same direction as the polishing pad.
Claim 30
Dependent Claim
16 words
The method according to claim 28, wherein the carrier is rotated in excess of 20 rpm.
Claim 31
Dependent Claim
69 words
The method according to claim 1, wherein the dielectric material comprises a doped oxide, the pressure is about 10 psi, the wafer carrier speed is about 15 rpm, the polishing pad is rotated about 20 to about 65 rpm, the slurry dispensed at about 100 to about 200 mil/min. at ambient temperature, whereby the doped oxide is removed at a rate of about 7,000 Å/min. to about 12,000 Å/min.
Claim 32
Dependent Claim
77 words
The method according to claim 30, wherein the polishing pad is conditioned by sweeping an abrasive diamond grit wheel across the surface of the polishing pad 3 to 7 sweeps with a downward force of about 6 to about 8 lbs. while the polishing pad is rotated at about 15 to about 50 rpm, and the abrasive diamond grit wheel is rotated in the same direction as the polishing pad at about 20 to about 40 rpm.
Claim 33
Dependent Claim
14 words
The method according to claim 1, wherein the dielectric layer comprises a conductive pattern.
Claim 34
Dependent Claim
16 words
The method according to claim 32, wherein the conductive pattern was formed by a damascene process.
References Cited (Backward Citations)
US3841031A
Cited
US3911562A
Cited
US4193266A
Cited
US4944836A
Cited
US4811822A
Cited
US4910155A
Cited
US5093279A
Cited
US5246884A
Cited
US5262354A
Cited
US5245794A
Cited
US5457070A
Cited
US5536202A
Cited
US5527424A
Cited
US5486265A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-09-08 | 2001-03-10 | 2001-09-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-09-08 | 2005-03-10 | 2005-09-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-09-08 | 2009-03-10 | 2009-09-09 | $7700.00 | Window Closed / Lapsed |