Patent US5665166A successfully refreshed from Google Patents.
US5665166A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Plasma processing apparatus
Assignee: Tokyo Electron Ltd
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Filing: 1996-10-23
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Granted: 1997-09-09
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Expires: 2016-10-23
Abstract
Abstract Disclosed is a plasma processing apparatus, comprising a first electrode on which an object to be processed is to be disposed, a second electrode arranged to face the first electrode, a high frequency power supply for supplying a high frequency power between the first and second electrodes, a processing gas supplying mechanism for forming a plasma into a region between the first and second electrodes, and a bias potential detecting mechanism for detecting the bias potential of the first electrode. The bias detecting mechanism has a detecting terminal positioned in the vicinity of the object to be processed.
Inventors
- 👤 Youichi Deguchi
- 👤 Satoru Kawakami
- 👤 Yoichi Ueda
- 👤 Mitsuaki Komino
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:03
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/505; C23C16/509; C23C16/5096; H01J37/32174; H01J37/32917; H01J37/32935
Claims Analysis
Total Claims: 40
Claim 1
Independent Claim
157 words
A plasma processing apparatus, comprising: a first electrode on which an object to be processed is to be disposed; a second electrode arranged to face said first electrode; a high frequency power supply to supply a high frequency power to said first electrode; means for supplying a processing gas for forming a plasma into a region between the first and second electrodes; bias potential detecting means for detecting the bias potential of the first electrode, said bias detecting means having a detecting terminal positioned in a plasma-processing space formed by supply of a high frequency power to said first electrode; electrostatic chucking means mounted on said first electrode for electrostatically chucking said object to be treated; a DC power supply for applying a voltage to said electrostatic chucking means; and current detecting means having one terminal connected to the electrostatic chucking means for detecting the current flowing between said electrostatic checking means and said DC power supply.
Claim 2
Dependent Claim
157 words
A plasma processing apparatus, comprising: a first electrode on which an object to be processed is to be disposed; a second electrode arranged to face said first electrode; a high frequency power supply to supply a high frequency power to said first electrode; means for supplying a processing gas for forming a plasma into a region between the first and second electrodes; bias potential detecting means for detecting the bias potential of the first electrode, said bias detecting means having a detecting terminal positioned in a plasma-processing space formed by supply of a high frequency power to said first electrode; electrostatic chucking means mounted on said first electrode for electrostatically chucking said object to be treated; a DC power supply for applying a voltage to said electrostatic chucking means; and current detecting means having one terminal connected to the electrostatic chucking means for detecting the current flowing between said electrostatic checking means and said DC power supply.
Claim 3
Dependent Claim
35 words
The apparatus according to claim 1, wherein the upper end of said detecting terminal is positioned above said first electrode and below a plasma sheath generated within the region between the first and second electrodes.
Claim 4
Dependent Claim
25 words
The apparatus according to claim 2, wherein the upper end of said detecting terminal is flush with the surface of the object to be treated.
Claim 5
Dependent Claim
36 words
The apparatus according to claim 1, wherein a focusing ring is formed on the first electrode in a manner to surround said object to be processed, and said detecting terminal is provided to said focusing ring.
Claim 6
Dependent Claim
18 words
The apparatus according to claim 1, wherein said focusing ring is formed of SiC or a refractory metal.
Claim 7
Dependent Claim
18 words
The apparatus according to claim 1, wherein said detecting means is provided with a plurality of detecting terminals.
Claim 8
Dependent Claim
21 words
The apparatus according to claim 6, wherein said plurality of detecting terminals are arranged to surround said object to be processed.
Claim 9
Dependent Claim
19 words
The apparatus according to claim 7, wherein said plurality of detecting terminals are arranged equidistantly in the circumferential direction.
Claim 10
Dependent Claim
35 words
The apparatus according to claim 7, wherein said plurality of detecting terminals are arranged equidistantly in respect of the distance between each of the detecting terminals and the periphery of the object to be processed.
Claim 11
Dependent Claim
31 words
The plasma processing apparatus according to claim 1, which further comprises control means serving to control said high frequency power supply based on the bias potential detected by said detecting means.
Claim 12
Dependent Claim
41 words
The plasma processing apparatus according to claim 1, which further comprises temperature control means serving to control the temperature of the object to be treated, said temperature control means comprising a coolant passageway formed in said first electrode and a heater.
Claim 13
Dependent Claim
25 words
The plasma processing apparatus according to claim 11, wherein said heater comprises a heat generating body and an AlN insulator covering said heat generating body.
Claim 14
Dependent Claim
100 words
A plasma processing apparatus, comprising: a first electrode on which an object to be treated is to be disposed; a second electrode arranged to face said first electrode; a high frequency power supply to supply a high frequency power to said first electrode; electrostatic chucking means mounted on said first electrode for electrostatically chucking said object to be treated; a DC power supply for applying a voltage to said electrostatic chucking means; and current detecting means having one terminal connected to the electrostatic chucking means for detecting the current flowing between said electrostatic chucking means and said DC power supply.
Claim 15
Dependent Claim
100 words
A plasma processing apparatus, comprising: a first electrode on which an object to be treated is to be disposed; a second electrode arranged to face said first electrode; a high frequency power supply to supply a high frequency power to said first electrode; electrostatic chucking means mounted on said first electrode for electrostatically chucking said object to be treated; a DC power supply for applying a voltage to said electrostatic chucking means; and current detecting means having one terminal connected to the electrostatic chucking means for detecting the current flowing between said electrostatic chucking means and said DC power supply.
Claim 16
Dependent Claim
23 words
The apparatus according to claim 13, wherein said electrostatic chucking means comprises an electrode body and an insulating member covering said electrode body.
Claim 17
Dependent Claim
31 words
The apparatus according to claim 13, which further comprises an abnormality detecting means serving to detect an abnormality of plasma based on the current value detected by said current detecting means.
Claim 18
Dependent Claim
66 words
The apparatus according to claim 13, which further comprises a high frequency power supply switch for turning ON/OFF the high frequency power supplied from said high frequency power supply and control means for turning said switch OFF when the detected value of said current detecting means arrives at a level or when the detected value continues to be on a level for a period of time.
Claim 19
Dependent Claim
72 words
The apparatus according to claim 16, which further comprises a DC power supply switch serving to turning ON/OFF the DC voltage supply from said DC power supply to said electrostatic chucking means, and control means for turning OFF said DC power supply switch when the detected value of the current detecting means arrives at a level or when the detected value continues to be on a level for a period of time.
Claim 20
Dependent Claim
75 words
The apparatus according to claim 16, which further comprises gas supply means for supplying a heat transferring gas into a region between said electrostatic chucking means and said object to be processed, and control means serving to stop supplying a gas from said gas supply means when the detected value of said current detecting means arrives at a value or when the detected value continues to be on a level for a period of time.
Claim 21
Dependent Claim
37 words
The apparatus according to claim 13, which further comprises temperature control means for controlling the temperature of said object to be processed, said temperature control means comprising a coolant passageway formed in said first electrode and heater.
Claim 22
Dependent Claim
21 words
The apparatus according to claim 19, wherein said heater comprises a heat generator and an AlN insulator covering said heat generator.
Claim 23
Dependent Claim
132 words
A plasma processing apparatus, comprising: a first electrode on which an object to be processed is to be disposed; a second electrode arranged to face said first electrode; a high frequency power supply to supply a high frequency power to said first electrode; means for supplying a processing gas for forming a plasma into a region between the first and second electrodes; bias potential detecting means for detecting the bias potential of the first electrode; electrostatic chucking means mounted on said first electrode for electrostatically chucking said object to be treated; a DC power supply for applying a voltage to said electrostatic chucking means; and current detecting means having one terminal connected to the electrostatic chucking means for detecting the current flowing between said electrostatic chucking means and said DC power supply.
Claim 24
Dependent Claim
132 words
A plasma processing apparatus, comprising: a first electrode on which an object to be processed is to be disposed; a second electrode arranged to face said first electrode; a high frequency power supply to supply a high frequency power to said first electrode; means for supplying a processing gas for forming a plasma into a region between the first and second electrodes; bias potential detecting means for detecting the bias potential of the first electrode; electrostatic chucking means mounted on said first electrode for electrostatically chucking said object to be treated; a DC power supply for applying a voltage to said electrostatic chucking means; and current detecting means having one terminal connected to the electrostatic chucking means for detecting the current flowing between said electrostatic chucking means and said DC power supply.
Claim 25
Dependent Claim
33 words
The apparatus according to claim 21, which further comprises detecting means for detecting an abnormality of plasma based on the detected values of said bias potential detecting means and said current detecting means.
Claim 26
Dependent Claim
44 words
The apparatus according to claim 21, wherein said high frequency power supply is connected to said first electrode, and said bias detecting means serves to measure the potential of a power supply wire extending between said high frequency power supply and said first electrode.
Claim 27
Dependent Claim
33 words
The apparatus according to claim 21, wherein said bias potential detecting means comprises a detecting terminal arranged in a plasma-processing space formed by supply of a high frequency power to said first electrode.
Claim 28
Dependent Claim
37 words
The apparatus according to claim 21, which further comprises temperature control means for controlling the temperature of said object to be processed, said temperature control means comprising a coolant passageway formed in said first electrode and heater.
Claim 29
Dependent Claim
23 words
The apparatus according to claim 25, wherein said heater comprises a heat generating body and an AlN insulator covering said heat generating body.
Claim 30
Dependent Claim
158 words
A plasma processing apparatus, comprising: a first electrode on which an object to be processed is to be disposed; a second electrode arranged to face said first electrode; a high frequency power supply to supply a high frequency power to either said first or second electrodes; means for supplying a processing gas for forming a plasma into a region between the first and second electrodes; and bias potential detecting means for detecting the bias potential of the first electrode, said bias detecting means having a detecting terminal positioned in a plasma processing space formed by supply of the high frequency lower to either of said first or second electrodes; wherein the upper end of said detecting terminal is positioned above said first electrode and below a plasma sheath generated within the region between the first and second electrodes, and wherein the upper end of said detecting terminal is flush with the surface of the object to be treated.
Claim 31
Dependent Claim
158 words
A plasma processing apparatus, comprising: a first electrode on which an object to be processed is to be disposed; a second electrode arranged to face said first electrode; a high frequency power supply to supply a high frequency power to either said first or second electrodes; means for supplying a processing gas for forming a plasma into a region between the first and second electrodes; and bias potential detecting means for detecting the bias potential of the first electrode, said bias detecting means having a detecting terminal positioned in a plasma processing space formed by supply of the high frequency lower to either of said first or second electrodes; wherein the upper end of said detecting terminal is positioned above said first electrode and below a plasma sheath generated within the region between the first and second electrodes, and wherein the upper end of said detecting terminal is flush with the surface of the object to be treated.
Claim 32
Dependent Claim
36 words
The apparatus according to claim 27, wherein a focusing ring is formed on the first electrode in a manner to surround said object to be processed, and said detecting terminal is provided to said focusing ring.
Claim 33
Dependent Claim
18 words
The apparatus according to claim 27, wherein said focusing ring is formed of SiC or a refractory metal.
Claim 34
Dependent Claim
18 words
The apparatus according to claim 27, wherein said detecting means is provided with a plurality of detecting terminals.
Claim 35
Dependent Claim
21 words
The apparatus according to claim 30, wherein said plurality of detecting terminals are arranged to surround said object to be processed.
Claim 36
Dependent Claim
19 words
The apparatus according to claim 31, wherein said plurality of detecting terminals are arranged equidistantly in the circumferential direction.
Claim 37
Dependent Claim
35 words
The apparatus according to claim 31, wherein said plurality of detecting terminals are arranged equidistantly in respect of the distance between each of the detecting terminals and the periphery of the object to be processed.
Claim 38
Dependent Claim
31 words
The plasma processing apparatus according to claim 27, which further comprises control means serving to control said high frequency power supply based on the bias potential detected by said detecting means.
Claim 39
Dependent Claim
41 words
The plasma processing apparatus according to claim 27, which further comprises temperature control means serving to control the temperature of the object to be treated, said temperature control means comprising a coolant passageway formed in said first electrode and a heater.
Claim 40
Dependent Claim
25 words
The plasma processing apparatus according to claim 35, wherein said heater comprises a heat generating body and an AlN insulator covering said heat generating body.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-09-08 | 2001-03-10 | 2001-09-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-09-08 | 2005-03-10 | 2005-09-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-09-08 | 2009-03-10 | 2009-09-09 | $7700.00 | Window Closed / Lapsed |