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US5433813A Expired / Lapsed US ⏱️ 0.0 years remaining

Semiconductor device manufacturing apparatus

Assignee: Canon Inc
•
Filing: 1993-11-03
•
Granted: 1995-07-18
•
Expires: 2013-11-03
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Abstract

Abstract In a semiconductor device manufacturing apparatus of a reactive ion etching apparatus or the like, only a DC signal in a high frequency electric field can be accurately detected in a real-time manner without any noise, thereby enabling a temperature, a potential, or another parameter of a substrate (wafer) to be accurately measured. For this purpose, according to this manufacturing apparatus, a transmission line filter (coaxial cable) 8 having an electric length ((2n+1)λ/4) that is an odd-number times as long as 1/4 of the wavelength λ of a high frequency power source 1 is connected between a thermocouple or electrode 7 and a voltmeter 10 to measure a temperature or another parameter of a wafer (substrate) 5. A high frequency signal is separated by the transmission line filter, and a high frequency impedance is short-circuited by a capacitance 9 resulting in the high frequency component being removed, and only a DC signal being provided to the voltmeter 10.

Inventors

  • 👤 Hideshi Kuwabara

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 02:44
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32917; H01J37/32935; C; C23; C23C; C23C14/00; C23C14/22; C23C14/54

Claims Analysis

Total Claims: 12
Claim 1
Independent Claim 100 words
A semiconductor device manufacturing apparatus comprising: a high frequency power source to generate a high frequency wave of a wavelength λ; a thermocouple or an electrode to detect a temperature or a potential of a wafer for a semiconductor device placed in an electric field of the high frequency wave; a measuring system to measure the temperature or potential through said thermocouple or electrode; and a transmission line filter which is connected between said thermocouple or electrode and said measuring system and which has an electric length that is an odd-number times as long as 1/4 of the wavelength λ.
Claim 2
Dependent Claim 100 words
A semiconductor device manufacturing apparatus comprising: a high frequency power source to generate a high frequency wave of a wavelength λ; a thermocouple or an electrode to detect a temperature or a potential of a wafer for a semiconductor device placed in an electric field of the high frequency wave; a measuring system to measure the temperature or potential through said thermocouple or electrode; and a transmission line filter which is connected between said thermocouple or electrode and said measuring system and which has an electric length that is an odd-number times as long as 1/4 of the wavelength λ.
Claim 3
Dependent Claim 24 words
An apparatus according to claim 1, wherein a capacitor having first and second electrodes has the first electrode connected to said transmission line filter.
Claim 4
Dependent Claim 17 words
An apparatus according to claim 2, wherein said capacitor is provided to eliminate a high frequency impedance.
Claim 5
Dependent Claim 15 words
An apparatus according to claim 1, wherein said transmission line filter includes a coaxial cable.
Claim 6
Dependent Claim 35 words
An apparatus according to claim 2, wherein the second electrode of said capacitor is connected to an edge portion on said measuring system side of said transmission line filter, which filter includes a coaxial cable.
Claim 7
Dependent Claim 13 words
An apparatus according to claim 5, wherein a plurality of capacitors are provided.
Claim 8
Dependent Claim 24 words
An apparatus according to claim 6, wherein said plurality of capacitors are radially provided with respect to a core wire of said coaxial cable.
Claim 9
Dependent Claim 14 words
An apparatus according to claim 4, wherein said plurality of capacitors are symmetrically arranged.
Claim 10
Dependent Claim 19 words
An apparatus according to claim 4, wherein a covered wire of said coaxial cable is connected to a ground.
Claim 11
Dependent Claim 20 words
An apparatus according to claim 9, wherein the covered wire is connected to the ground at a plurality of positions.
Claim 12
Dependent Claim 24 words
An apparatus according to claim 10, wherein the connections to the ground are made in edge portions on opposite ends of said coaxial cable.

References Cited (Backward Citations)

US5231690A Cited
US5232509A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1998-07-17 1999-01-16 1999-07-18 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2002-07-17 2003-01-16 2003-07-18 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2006-07-17 2007-01-16 2007-07-18 $7700.00 Window Closed / Lapsed

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