US5663093A
Expired / Lapsed
US
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Method for forming a cylindrical capacitor having a central spine
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 1996-06-17
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Granted: 1997-09-02
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Expires: 2016-06-17
Abstract
Abstract A method for manufacturing a cylindrical stacked capacitor having a central spine for a DRAM using only one photo mask is provided. The invention uses sidewall spacers and selective etching techniques to form a low cost, simple to manufacture, high capacitance capacitor and DRAM cell. A substrate having source regions, drain regions and gate electrode structures is provided. An insulating layer with a contact opening is formed over the substrate surface. A first conductive layer and a first dielectric layer are formed over the insulating layer. The first dielectric layer and first conductive layer are etched forming a central spine over the contact opening. The etched first dielectric layer forms a dielectric cap over central spine. Dielectric spacers are formed on the sidewall of the central spine and the dielectric cap. The remaining portions of the first conductive layer are anisotropically etched using the dielectric spacers and the dielectric cap as a mask. Conductive spacers are formed on the sidewalls of the dielectric spacers. The dielectric cap and the dielectric spacers are selectively etched thereby forming a crown shaped storage node having a central spine. A capacitor dielectric layer and a top electrode are formed over the crown shaped storage node and the insulating layer forming a crown shaped capacitor.
Inventors
- 👤 Horng-Huei Tseng
- 👤 Chih-Yuan Lu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 20:37
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; H10B12/31; H10B12/318; H10B12/01; H10B12/02; H10B12/03; H10B12/033
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
225 words
A method of forming a stacked capacitor on a substrate having source regions, drain regions and gate electrode structures comprising: a) forming an insulating layer over said substrate surface; b) forming a contact opening exposing said source region; c) forming a first conductive layer over said insulating layer and filling said contact opening to form an electrical contact with said source region; d) forming a first dielectric layer over said conductive layer; e) patterning said first dielectric layer and first conductive layer to form a central spine over said contact opening and to form a dielectric cap over central spine, and leaving portions of said first conductive layer covering said insulation layer, said central spine, said dielectric cap having sidewalls; f) forming dielectric spacers on said sidewalls of said central spine and said dielectric cap, said dielectric spacers having sidewalls; g) anisotropically etching said remaining portions of said first conductive layer using said dielectric spacers and said dielectric cap as a mask exposing said insulating layer; h) forming conductive spacers on said sidewalls of said dielectric spacers; i) selectively etching completely said dielectric cap and said dielectric spacers thereby forming a crown shaped storage node having a central spine; sequentially forming a capacitor dielectric layer and a top electrode over said crown shaped storage node and said insulating layer thereby forming a crown shaped capacitor.
Claim 2
Independent Claim
225 words
A method of forming a stacked capacitor on a substrate having source regions, drain regions and gate electrode structures comprising: a) forming an insulating layer over said substrate surface; b) forming a contact opening exposing said source region; c) forming a first conductive layer over said insulating layer and filling said contact opening to form an electrical contact with said source region; d) forming a first dielectric layer over said conductive layer; e) patterning said first dielectric layer and first conductive layer to form a central spine over said contact opening and to form a dielectric cap over central spine, and leaving portions of said first conductive layer covering said insulation layer, said central spine, said dielectric cap having sidewalls; f) forming dielectric spacers on said sidewalls of said central spine and said dielectric cap, said dielectric spacers having sidewalls; g) anisotropically etching said remaining portions of said first conductive layer using said dielectric spacers and said dielectric cap as a mask exposing said insulating layer; h) forming conductive spacers on said sidewalls of said dielectric spacers; i) selectively etching completely said dielectric cap and said dielectric spacers thereby forming a crown shaped storage node having a central spine; sequentially forming a capacitor dielectric layer and a top electrode over said crown shaped storage node and said insulating layer thereby forming a crown shaped capacitor.
Claim 3
Dependent Claim
44 words
The method of claim 1 wherein said insulating layer is formed of a material selected from the group consisting of Silicon Nitride, phosphosilicate glass (PSG), borophosphosilicate glass (BPSG) and silicon oxide, and has a thickness in a range between about 5000 and 10,000 Å.
Claim 4
Dependent Claim
29 words
The method of claim 1 wherein said first conductive layer is formed of doped polysilicon and has a thickness in a range of between about 1000 and 4000 Å.
Claim 5
Dependent Claim
29 words
The method of claim 1 wherein said first dielectric layer is composed of silicon nitride and has a thickness in a range of between about 500 and 2000 Å.
Claim 6
Dependent Claim
28 words
The method of claim 1 wherein said second dielectric layer is formed of polysilicon, and has a thickness in a range of between about 1000 and 3000 Å.
Claim 7
Dependent Claim
22 words
The method of claim 1 wherein central spine has a shape selected from the group consisting of: cylindrical and rectangular (box) shape.
Claim 8
Dependent Claim
30 words
The method of claim 1 wherein said second conductive layer 38 is formed of doped polysilicon and has a thickness in a range of between about 1000 and 3000 Å.
Claim 9
Dependent Claim
35 words
The method of claim 1 wherein said dielectric spacers have a width in a range of between about 500 and 1500 Å, and a height in a range of between about 3000 and 6000 Å.
Claim 10
Dependent Claim
35 words
The method of claim 1 wherein said conductive spacers have a width in a range of between about 500 and 2000 Å, and a height in a range of between about 3000 and 6000 Å.
Claim 11
Independent Claim
293 words
A method of forming a stacked capacitor for a DRAM on a substrate having source regions, drain regions and gate electrode structures comprising: a) forming an insulating layer composed of silicon oxide over said substrate surface; b) forming a contact opening exposing said source region; c) forming a first conductive layer comprised of doped polysilicon over said insulating layer and filling said contact opening forming an electrical contact with said source region; d) forming a first dielectric layer composed of nitride over said conductive layer; e) patterning said first dielectric layer and first conductive layer forming a central spine over said contact opening and forming said a dielectric cap over central spine, and leaving potions of said first conductive layer covering said insulation layer, said central spine, said dielectric cap having sidewalls; forming a second dielectric layer composed of silicon nitride over said remaining potions of said first conductive layer, said central spine and said dielectric cap; g) anisotropically etching said second dielectric layer forming dielectric spacers on said sidewalls of said central spine and said dielectric cap, said dielectric spacers having sidewalls; h) anisotropically etching said remaining portions of said first conductive layer using said dielectric spacers and said dielectric cap as a mask exposing said insulating layer; i) forming a second conductive layer over insulating layer, central spine, said dielectric spacers and dielectric cap layer; j) anisotropically etching said second conductive layer forming conductive spacers on said sidewalls of said dielectric spacers; k) selectively etching completely said dielectric cap and said dielectric spacers thereby forming a crown shaped storage node having a central spine; and 1) forming a capacitor dielectric layer and a top electrode over said crown shaped storage node and said insulating layer thereby forming a crown shape capacitor.
Claim 12
Independent Claim
293 words
A method of forming a stacked capacitor for a DRAM on a substrate having source regions, drain regions and gate electrode structures comprising: a) forming an insulating layer composed of silicon oxide over said substrate surface; b) forming a contact opening exposing said source region; c) forming a first conductive layer comprised of doped polysilicon over said insulating layer and filling said contact opening forming an electrical contact with said source region; d) forming a first dielectric layer composed of nitride over said conductive layer; e) patterning said first dielectric layer and first conductive layer forming a central spine over said contact opening and forming said a dielectric cap over central spine, and leaving potions of said first conductive layer covering said insulation layer, said central spine, said dielectric cap having sidewalls; forming a second dielectric layer composed of silicon nitride over said remaining potions of said first conductive layer, said central spine and said dielectric cap; g) anisotropically etching said second dielectric layer forming dielectric spacers on said sidewalls of said central spine and said dielectric cap, said dielectric spacers having sidewalls; h) anisotropically etching said remaining portions of said first conductive layer using said dielectric spacers and said dielectric cap as a mask exposing said insulating layer; i) forming a second conductive layer over insulating layer, central spine, said dielectric spacers and dielectric cap layer; j) anisotropically etching said second conductive layer forming conductive spacers on said sidewalls of said dielectric spacers; k) selectively etching completely said dielectric cap and said dielectric spacers thereby forming a crown shaped storage node having a central spine; and 1) forming a capacitor dielectric layer and a top electrode over said crown shaped storage node and said insulating layer thereby forming a crown shape capacitor.
Claim 13
Dependent Claim
21 words
The method of claim 1 wherein said insulating layer has a thickness in a range between about 5000 and 10,000 Å.
Claim 14
Dependent Claim
23 words
The method of claim 10 wherein said first conductive layer has a thickness in a range of between about 1000 and 4000 Å.
Claim 15
Dependent Claim
23 words
The method of claim 10 wherein said first dielectric layer has a thickness in a range of between about 500 and 2000 Å.
Claim 16
Dependent Claim
28 words
The method of claim 10 wherein said second dielectric layer is formed of polysilicon, and has a thickness in a range of between about 1000 and 3000 Å.
Claim 17
Dependent Claim
22 words
The method of claim 10 wherein central spine has a shape selected from the group consisting of: cylindrical and rectangular (box) shape.
Claim 18
Dependent Claim
24 words
The method of claim 10 wherein said second conductive layer 38 has a thickness in a range of between about 1000 and 3000 Å.
Claim 19
Dependent Claim
35 words
The method of claim 10 wherein said dielectric spacers have a width in a range of between about 500 and 1500 Å, and a height in a range of between about 3000 and 6000 Å.
Claim 20
Dependent Claim
35 words
The method of claim 10 wherein said conductive spacers have a width in a range of between about 500 and 2000 Å, and a height in a range of between about 3000 and 6000 Å.
References Cited (Backward Citations)
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