US5185282A
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Method of manufacturing DRAM cell having a cup shaped polysilicon storage electrode
Assignee: Electronics and Telecommunications Research Institute
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Filing: 1990-10-24
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Granted: 1993-02-09
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Expires: 2010-10-24
Abstract
Abstract A DRAM cell of a stack structure having a cup-shaped polysilicon storage electrode for being applied to a 16 mega and 64 mega DRAM wherein a transfer transistor is firstly manufactured, a bit line is formed, an oxide film grid is formed between the cell and cell in the minimum design rule, and upon completing this, the polysilicon storage electrode is formed into a single or double cup shape, whereby the capacitor area is remarkably increased when compared with the conventional stacked structure DRAM cell so that the area efficiency is greatly increased and the process can be executed by such a mask number as the prior stacked structure mask layer number and the structure thereof is simple.
Inventors
- 👤 Jin H. Lee
- 👤 Cheon S. Kim
- 👤 Kyu H. Lee
- 👤 Dae Y. Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 09:30
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10D; H10D1/00; H10D1/01; H10D1/041; H10D1/042; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/716
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
190 words
A method for forming a DRAM cell stacked structure having a polysilicon storage electrode of a cup shape comprising the steps of: defining an active region on a p-type silicon substrate; forming a transistor and a polysilicide layer for a bit line; depositing a silicon nitride film of the thickness of about 50-100 nm as an etch stop layer; defining a contacting portion between a storage electrode and a source of said transistor and forming a first oxide film on said silicon nitride film to form a cup-shaped portion of a charge storing electrode; depositing a first charge storing polysilicon electrode of the thickness of 50-100 nm as said charge storing electrode and depositing a second oxide film to form oxide film side wall spacers on both side walls of said first charge storing polysilicon electrode; depositing a second polysilicon electrode, depositing a photo resist of liquid phase on said second polysilicon electrode, and etching back said second polysilicon electrode to form a double polysilicon electrode; and injecting ions of an N+ impurity to said first and second polysilicon electrodes, a capacitor dielectric film, and then defining a plate electrode.
Claim 2
Independent Claim
190 words
A method for forming a DRAM cell stacked structure having a polysilicon storage electrode of a cup shape comprising the steps of: defining an active region on a p-type silicon substrate; forming a transistor and a polysilicide layer for a bit line; depositing a silicon nitride film of the thickness of about 50-100 nm as an etch stop layer; defining a contacting portion between a storage electrode and a source of said transistor and forming a first oxide film on said silicon nitride film to form a cup-shaped portion of a charge storing electrode; depositing a first charge storing polysilicon electrode of the thickness of 50-100 nm as said charge storing electrode and depositing a second oxide film to form oxide film side wall spacers on both side walls of said first charge storing polysilicon electrode; depositing a second polysilicon electrode, depositing a photo resist of liquid phase on said second polysilicon electrode, and etching back said second polysilicon electrode to form a double polysilicon electrode; and injecting ions of an N+ impurity to said first and second polysilicon electrodes, a capacitor dielectric film, and then defining a plate electrode.
Claim 3
Dependent Claim
45 words
The method for forming a DRAM cell stack structure of claim 1, wherein in order to form said bit line before formation of the storage electrode, said active region has a V-shaped structure and has a bit line contact portion formed at the center thereof.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-02-09 | 1996-08-10 | 1997-02-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-02-09 | 2000-08-10 | 2001-02-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-02-09 | 2004-08-10 | 2005-02-09 | $7700.00 | Window Closed / Lapsed |