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US5659499A
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Magnetic memory and method therefor
Assignee: Everspin Technologies Inc
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Filing: 1995-11-24
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Granted: 1997-08-19
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Expires: 2015-11-24
Abstract
Abstract A magnetic memory utilizes a magnetic material to concentrate a magnetic field in a magnetic memory cell element. The magnetic material reduces the amount of current required to read and write the magnetic memory.
Inventors
- 👤 Eugene Chen
- 👤 Saied N. Tehrani
- 👤 Mark Durlam
- 👤 Xiaodong T. Zhu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 21:02
CPC Classifications
H; H10; H10B; H10B69/00; G; G11; G11C; G11C11/00; G11C11/02; G11C11/14; G11C11/15
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
82 words
A method of forming a magnetic memory comprising: forming an elongated conductor having a width and overlying a magnetic memory cell element; and concentrating a magnetic field created by the conductor away from a portion of the conductor and toward the magnetic memory cell element to extend into a gap narrower than the width of the conductor wherein the gap is between the conductor and the magnetic memory cell element and wherein the magnetic field extends into the magnetic memory cell element.
Claim 2
Independent Claim
82 words
A method of forming a magnetic memory comprising: forming an elongated conductor having a width and overlying a magnetic memory cell element; and concentrating a magnetic field created by the conductor away from a portion of the conductor and toward the magnetic memory cell element to extend into a gap narrower than the width of the conductor wherein the gap is between the conductor and the magnetic memory cell element and wherein the magnetic field extends into the magnetic memory cell element.
Claim 3
Dependent Claim
34 words
The method of forming a magnetic memory as claimed in claim 1 further including a step of forming the gap by plating magnetic material under the conductor and between the conductor and a dielectic.
Claim 4
Dependent Claim
37 words
The method of forming a magnetic memory as claimed in claim 1 further including a step of forming the gap by placing magnetic material under the conductor and between the magnetic memory cell element and a dielectric.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-08-18 | 2001-02-17 | 2001-08-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-08-18 | 2005-02-17 | 2005-08-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-08-18 | 2009-02-17 | 2009-08-19 | $7700.00 | Window Closed / Lapsed |