Magnetoresistive memory with multi-layer storage cells having layers of limited thickness

Claim 1

A magnetoresistive sensing, ferromagnetic thin film based digital memory, said memory comprising: a first storage line structure having a first storage line pair of end terminals adapted to conduct electrical current in at least one direction, said storage line end terminals having electrically connected in series therebetween a plurality of bit structures with each said bit structure electrically connected at a bit juncture to at least one other said bit structure, each said bit structure to comprise at least a structure comprising: an intermediate layer, said intermediate layer having two major surfaces on opposite sides thereof such that said major surfaces are separated by less than one hundred Angstroms but sufficiently separated for said intermediate layer to prevent any exchange interaction from coupling thereacross, and a memory film on each of said intermediate layer major surfaces with said memory film being of a thickness less than three hundred Angstroms and of a magnetoresistive, anisotropic ferromagnetic material, and a plurality of word line structures each having a pair of word line end terminals adapted to conduct electrical current in at least one direction, each said pair of said word line end terminals having an electrical conductor electrically connected therebetween which is located across an electrical insulating layer from said memory film on one of said major surfaces of said intermediate layer of a selected one of said bit structures.