Magnetoresistive readout of thinfilm memories

Claim 1

A MEMORY SYSTEM COMPRISING A PLURALITY OF MEMORY ELEMENTS CONSISTING OF CONDUCTIVE MAGNETIC MATERIAL HAVING A SUBTANTIALLY RECTANGULAR HYSTERISIS CURVE, EACH OF SAID ELEMENTS BEING IN THE FORM OF A THIN FILM WITH A PREFERENTIAL ORIENTATION OF THE MAGENITIZATION IN THE PLANE OF THE FILM, SAID ELEMENTS BEING ARRANGED IN THE FORM OF A MATRIX HAVING A PLURALITY OF ROWS AND COLUMNS, A PLURALITY OF HORIZONTAL CONDUCTOR MEANS EACH BEING INDUCTIVELY COUPLED TO A PARTICULAR ROW, A PLURALITY OF VERTICAL CONDUCTOR MEANS EACH BEING INDUCTIVELY COUPLED TO A PARTICULAR COLUMN, MEANS FOR SUPPLYING PULSES OF A PREDETERMINED MAGNITUDE TO SELECTED ONES OF SAID HORIZONTAL AND VERTICAL CONDUCTORS FOR SUPPLYING INFORMATION TO A SELECTED ELEMENT, A PLURALITY OF ELECTRICALLY CONDUCTIVE MEANS EACH BEING CONDUCTIVELY CONNECTED TO AT LEAST ONE OF SAID ELEMENTS, EACH CONDUCTIVE MEANS CONDUCTIVELY INTERCONNECTING IN SERIES SUCCESSIVE ELEMENTS OF A SINGLE ROW OR COLUMN, MEANS FOR TEMPORARILY SUPPLYING A SUBSTANTIALLY CONSTANT CURRENT TO THE SUCCESSIVE ELEMENTS OF A SELECTED ROW OF COLUMN THROUGH SAID CONDUCTIVE MEANS AND MEANS FOR APPLYING A READ-OUT PULSE A PREDETERMINED MAGNITUDE TO A SELECTED ONE OF SAID CONDUCTORS DURING THE TIME THAT SAID CONSTANT CURRENT IS SUPPLIED FOR READING OUT INFORMATION IN A SELECTED ELEMENT, AND DETECTING MEANS FOR DETECTING THE CHANGE OF SAID CURRENT DUE TO THE APPLICATION OF SAID READ-OUT PULSE, SAID DETECTING MEANS BEING COUPLED TO ALL OF THE CONDUCTIVELY INTERCONNECTED ELEMENTS.