Method of manufacturing a semiconductor device

Claim 1

A method of manufacturing a semiconductor device comprising: a first step of forming a first insulating film over the surface of a first region in a semiconductor body; a second step of forming a first metal film over the first insulating film, by a sputtering process; a third step of forming a second insulating film of a desired shape over the first metal film; a fourth step of selectively forming a second metal film over the first metal film exposed after the third step; a fifth step of removing the second insulating film after the fourth step; a sixth step of removing the first metal film exposed after the fifth step; and a seventh step of introducing a first impurity into the first region with the second metal film as a mask after the sixth step to form a first impurity region of a conductivity type different from that of the first region.

Claim 2

A method of manufacturing a semiconductor device comprising: a first step of forming a first insulating film over the surface of a first region in a semiconductor body; a second step of forming a first metal film over the first insulating film, by a sputtering process; a third step of forming a second insulating film of a desired shape over the first metal film; a fourth step of selectively forming a second metal film over the first metal film exposed after the third step; a fifth step of removing the second insulating film after the fourth step; a sixth step of removing the first metal film exposed after the fifth step; and a seventh step of introducing a first impurity into the first region with the second metal film as a mask after the sixth step to form a first impurity region of a conductivity type different from that of the first region.

Claim 20

A method of manufacturing a semiconductor device comprising: a step of forming a device isolation insulating film around a first region of a semiconductor body having a first conductivity type; a step of forming a gate insulating film in the first region; a step of forming a first tungsten film on the semiconductor body having the gate insulating film, by a sputtering process; a step of forming on the first tungsten film a third insulating film having an opening at a specified area of the first region; a step of introducing a first impurity into the semiconductor body through the opening in the third insulating film to form a punch-through stopper of a first conductivity type; a step of selectively depositing inside the opening in the third insulating film a second tungsten film thicker than the first tungsten film; a step of removing the third insulating film; a step of removing an exposed portion of the first tungsten film; a step of forming a fourth insulating film on a sidewall of a layered film of the first and second tungsten films; and a step of introducing a second impurity into the semiconductor body to form a source and a drain both having a second conductivity type opposite to the first conductivity type.

Claim 21

A method of manufacturing a semiconductor device comprising: a step of forming a device isolation insulating film around a first region of a semiconductor body having a first conductivity type; a step of forming a gate insulating film in the first region; a step of forming a first tungsten film on the semiconductor body having the gate insulating film, by a sputtering process; a step of forming on the first tungsten film a third insulating film having an opening at a specified area of the first region; a step of introducing a first impurity into the semiconductor body through the opening in the third insulating film to form a punch-through stopper of a first conductivity type; a step of selectively depositing inside the opening in the third insulating film a second tungsten film thicker than the first tungsten film; a step of removing the third insulating film; a step of removing an exposed portion of the first tungsten film; a step of forming a fourth insulating film on a sidewall of a layered film of the first and second tungsten films; and a step of introducing a second impurity into the semiconductor body to form a source and a drain both having a second conductivity type opposite to the first conductivity type.

Claim 25

A method of manufacturing a semiconductor device comprising: a step of forming a device isolation insulating film around a first region of a semiconductor body having a first conductivity type; a step of introducing a first impurity into the semiconductor body having the device isolation insulating film to form a first impurity doped layer of a first conductivity type; a step of forming a gate insulating film in the first region; a step of forming a first tungsten film on the semiconductor body having the gate insulating film, by a sputtering process; a step of forming on the first tungsten film a third insulating film having an opening at a specified area of the first region; a step of introducing a second impurity through the opening in the third insulating film into the semiconductor body to a depth shallower than the first impurity doped layer to form a punch-through stopper of a first conductivity type; a step of selectively depositing inside the opening in the third insulating film a second tungsten film thicker than the first tungsten film; a step of removing the third insulating film; a step of removing an exposed portion of the first tungsten film; a step of forming a fourth insulating film on a sidewall of a layered film of the first and second tungsten films; and a step of introducing a second impurity into the semiconductor body to form a source and a drain both having a second conductivity type opposite to the first conductivity type.

Claim 26

A method of manufacturing a semiconductor device comprising: a step of forming a device isolation insulating film around a first region of a semiconductor body having a first conductivity type; a step of introducing a first impurity into the semiconductor body having the device isolation insulating film to form a first impurity doped layer of a first conductivity type; a step of forming a gate insulating film in the first region; a step of forming a first tungsten film on the semiconductor body having the gate insulating film, by a sputtering process; a step of forming on the first tungsten film a third insulating film having an opening at a specified area of the first region; a step of introducing a second impurity through the opening in the third insulating film into the semiconductor body to a depth shallower than the first impurity doped layer to form a punch-through stopper of a first conductivity type; a step of selectively depositing inside the opening in the third insulating film a second tungsten film thicker than the first tungsten film; a step of removing the third insulating film; a step of removing an exposed portion of the first tungsten film; a step of forming a fourth insulating film on a sidewall of a layered film of the first and second tungsten films; and a step of introducing a second impurity into the semiconductor body to form a source and a drain both having a second conductivity type opposite to the first conductivity type.

Claim 27

A method of manufacturing a semiconductor device comprising: a step of forming a device isolation insulating film around a first region of a semiconductor body having a first conductivity type; a step of forming a gate insulating film in the first region; a step of forming a first tungsten film on the semiconductor body having the gate insulating film, by a sputtering process; a step of forming on the first tungsten film a third insulating film having an opening at a specified area of the first region; a step of introducing a first impurity into the semiconductor body through the opening in the third insulating film to form a punch-through stopper of a first conductivity type; a step of selectively depositing inside the opening in the third insulating film a second tungsten film thicker than the first tungsten film; a step of removing the third insulating film; a step of forming a fourth insulating film on a sidewall of the second tungsten film; a step of removing an exposed portion of the first tungsten film; a step of forming a fifth insulating film on a sidewall of the first tungsten film; and a step of introducing a second impurity into the semiconductor body to form a source and a drain both having a second conductivity type opposite to the first conductivity type.

Claim 28

A method of manufacturing a semiconductor device comprising: a step of forming a device isolation insulating film around a first region of a semiconductor body having a first conductivity type; a step of forming a gate insulating film in the first region; a step of forming a first tungsten film on the semiconductor body having the gate insulating film, by a sputtering process; a step of forming on the first tungsten film a third insulating film having an opening at a specified area of the first region; a step of introducing a first impurity into the semiconductor body through the opening in the third insulating film to form a punch-through stopper of a first conductivity type; a step of selectively depositing inside the opening in the third insulating film a second tungsten film thicker than the first tungsten film; a step of removing the third insulating film; a step of forming a fourth insulating film on a sidewall of the second tungsten film; a step of removing an exposed portion of the first tungsten film; a step of forming a fifth insulating film on a sidewall of the first tungsten film; and a step of introducing a second impurity into the semiconductor body to form a source and a drain both having a second conductivity type opposite to the first conductivity type.

Claim 29

A method of manufacturing a semiconductor device comprising: a step of forming a device isolation insulating film around a first region of a semiconductor body having a first conductivity type; a step of forming a gate insulating film in the first region; a step of forming a first tungsten film on the semiconductor body having the gate insulating film, by a sputtering process; a step of forming on the first tungsten film a third insulating film having a first opening at a specified area of the first region; a step of forming inside the first opening in the third insulating film a fourth insulating film having a second opening; a step of introducing a first impurity into the semiconductor body through the second opening in the fourth insulating film to form a punch-through stopper of a first conductivity type; a step of selectively depositing inside the second opening in the fourth insulating film a second tungsten film thicker than the first tungsten film; a step of removing the third and fourth insulating films; a step of removing an exposed portion of the first tungsten film; a step of forming a fifth insulating film on a sidewall of a layered film of the first and second tungsten films; and a step of introducing a second impurity into the semiconductor body to form a source and a drain both having a second conductivity type opposite to the first conductivity type.

Claim 30

A method of manufacturing a semiconductor device comprising: a step of forming a device isolation insulating film around a first region of a semiconductor body having a first conductivity type; a step of forming a gate insulating film in the first region; a step of forming a first tungsten film on the semiconductor body having the gate insulating film, by a sputtering process; a step of forming on the first tungsten film a third insulating film having a first opening at a specified area of the first region; a step of forming inside the first opening in the third insulating film a fourth insulating film having a second opening; a step of introducing a first impurity into the semiconductor body through the second opening in the fourth insulating film to form a punch-through stopper of a first conductivity type; a step of selectively depositing inside the second opening in the fourth insulating film a second tungsten film thicker than the first tungsten film; a step of removing the third and fourth insulating films; a step of removing an exposed portion of the first tungsten film; a step of forming a fifth insulating film on a sidewall of a layered film of the first and second tungsten films; and a step of introducing a second impurity into the semiconductor body to form a source and a drain both having a second conductivity type opposite to the first conductivity type.

Claim 31

A method of manufacturing a semiconductor device comprising: a step of forming a device isolation insulating film around a first region of a semiconductor body having a first conductivity type; a step of forming a gate insulating film in the first region; a step of forming a first tungsten film on the semiconductor body having the gate insulating film, by a sputtering process; a step of forming on the first tungsten film a third insulating film having a first opening at a specified area of the first region; a step of forming inside the first opening in the third insulating film a fourth insulating film having a second opening; a step of introducing a first impurity into the semiconductor body through the second opening in the fourth insulating film to form a punch-through stopper of a first conductivity type; a step of selectively depositing inside the second opening in the fourth insulating film a second tungsten film thicker than the first tungsten film; a step of removing the third and fourth insulating films; a step of forming a fifth insulating film on a sidewall of the second tungsten film; a step of removing an exposed portion of the first tungsten film; a step of forming a sixth insulating film on a sidewall of the first tungsten film; and a step of introducing a second impurity into the semiconductor body to form a source and a drain both having a second conductivity type opposite to the first conductivity type.

Claim 32

A method of manufacturing a semiconductor device comprising: a step of forming a device isolation insulating film around a first region of a semiconductor body having a first conductivity type; a step of forming a gate insulating film in the first region; a step of forming a first tungsten film on the semiconductor body having the gate insulating film, by a sputtering process; a step of forming on the first tungsten film a third insulating film having a first opening at a specified area of the first region; a step of forming inside the first opening in the third insulating film a fourth insulating film having a second opening; a step of introducing a first impurity into the semiconductor body through the second opening in the fourth insulating film to form a punch-through stopper of a first conductivity type; a step of selectively depositing inside the second opening in the fourth insulating film a second tungsten film thicker than the first tungsten film; a step of removing the third and fourth insulating films; a step of forming a fifth insulating film on a sidewall of the second tungsten film; a step of removing an exposed portion of the first tungsten film; a step of forming a sixth insulating film on a sidewall of the first tungsten film; and a step of introducing a second impurity into the semiconductor body to form a source and a drain both having a second conductivity type opposite to the first conductivity type.

Claim 33

A method of manufacturing a semiconductor device comprising: a step of forming a device isolation insulating film around a first region of a semiconductor body having a first conductivity type; a step of forming a gate insulating film in the first region; a step of forming a silicon film on the semiconductor body having the gate insulating film; a step of forming on the silicon film a third insulating film having an opening at a specified area of the first region; a step of doping a first impurity into the semiconductor body through the opening in the third insulating film to form a punch-through stopper of the first conductivity type; a step of replacing the silicon film inside the opening in the third insulating film with a first tungsten film, after the step of doping the first impurity; a step of selectively depositing inside the opening in the third insulating film a second tungsten film thicker than the first tungsten film; a step of removing the third insulating film; a step of removing an exposed portion of the silicon film; a step of forming a fourth insulating film on a sidewall of a layered film of the first and second tungsten films; and a step of introducing a second impurity into the semiconductor body to form a source and a drain both having a second conductivity type opposite to the first conductivity type.

Claim 34

A method of manufacturing a semiconductor device comprising: a step of forming a device isolation insulating film around a first region of a semiconductor body having a first conductivity type; a step of forming a gate insulating film in the first region; a step of forming a silicon film on the semiconductor body having the gate insulating film; a step of forming on the silicon film a third insulating film having an opening at a specified area of the first region; a step of doping a first impurity into the semiconductor body through the opening in the third insulating film to form a punch-through stopper of the first conductivity type; a step of replacing the silicon film inside the opening in the third insulating film with a first tungsten film, after the step of doping the first impurity; a step of selectively depositing inside the opening in the third insulating film a second tungsten film thicker than the first tungsten film; a step of removing the third insulating film; a step of removing an exposed portion of the silicon film; a step of forming a fourth insulating film on a sidewall of a layered film of the first and second tungsten films; and a step of introducing a second impurity into the semiconductor body to form a source and a drain both having a second conductivity type opposite to the first conductivity type.

Claim 35

A method of manufacturing a semiconductor device comprising: a step of forming a device isolation insulating film around a first region of a semiconductor body; a step of forming a first insulating film in the first region; a step of forming a first metal film on the semiconductor body having the first insulating film, by a sputtering process; a step of forming on the first metal film a third insulating film having an opening at a specified area of the first region; a step of introducing a first impurity into the semiconductor body through the opening in the third insulating film to form a first impurity doped layer having the first conductivity type; a step of selectively depositing inside the opening in the third insulating film a second metal film thicker than the first metal film; a step of removing the third insulating film; a step of removing an exposed portion of the first metal film; a step of forming a fourth insulating film on a sidewall of a layered film of the first and second metal films; and a step of introducing a second impurity into the semiconductor body to form second and third impurity doped layers having a second conductivity type opposite to the first conductivity type.

Claim 36

A method of manufacturing a semiconductor device comprising: a step of forming a device isolation insulating film around a first region of a semiconductor body; a step of forming a first insulating film in the first region; a step of forming a first metal film on the semiconductor body having the first insulating film, by a sputtering process; a step of forming on the first metal film a third insulating film having an opening at a specified area of the first region; a step of introducing a first impurity into the semiconductor body through the opening in the third insulating film to form a first impurity doped layer having the first conductivity type; a step of selectively depositing inside the opening in the third insulating film a second metal film thicker than the first metal film; a step of removing the third insulating film; a step of removing an exposed portion of the first metal film; a step of forming a fourth insulating film on a sidewall of a layered film of the first and second metal films; and a step of introducing a second impurity into the semiconductor body to form second and third impurity doped layers having a second conductivity type opposite to the first conductivity type.

Claim 37

A method of manufacturing a semiconductor device comprising: a step of forming a device isolation insulating film around a first region of a semiconductor body having a first conductivity type; a step of introducing an impurity into the first region and through the device isolation insulating film, so as to form a channel stopper region; a step of forming a first insulating film over the surface of the first region of the semiconductor body; a step of forming a first metal film over the first insulating film; a step of forming a second insulating film of a desired shape over the first metal film; a step of introducing an impurity into the semiconductor body so as to form a punch-through stopper region, the punch-through stopper region being located between the surface of the semiconductor body and the channel stopper region; a step of selectively forming a second metal film over the first metal film exposed through the second insulating film; a step of removing the second insulating film after selectively forming the second metal film; a step of removing the first metal film exposed after removing the second insulting film; and a step of introducing a first impurity into the first region with the second metal film as a mask after the step of removing exposed first metal film, to form a first impurity region of a conductivity type different from that of the first region.

Claim 38

A method of manufacturing a semiconductor device comprising: a step of forming a device isolation insulating film around a first region of a semiconductor body having a first conductivity type; a step of introducing an impurity into the first region and through the device isolation insulating film, so as to form a channel stopper region; a step of forming a first insulating film over the surface of the first region of the semiconductor body; a step of forming a first metal film over the first insulating film; a step of forming a second insulating film of a desired shape over the first metal film; a step of introducing an impurity into the semiconductor body so as to form a punch-through stopper region, the punch-through stopper region being located between the surface of the semiconductor body and the channel stopper region; a step of selectively forming a second metal film over the first metal film exposed through the second insulating film; a step of removing the second insulating film after selectively forming the second metal film; a step of removing the first metal film exposed after removing the second insulting film; and a step of introducing a first impurity into the first region with the second metal film as a mask after the step of removing exposed first metal film, to form a first impurity region of a conductivity type different from that of the first region.

Claim 39

A method of manufacturing a semiconductor device comprising: a step of forming a device isolation insulating film around a first region of a semiconductor body having a first conductivity type; a step of introducing an impurity into the first region and through the device isolation insulating film so as to form a channel stopper region; a step of forming a gate insulating film in the first region; a step of forming a first tungsten film on the semiconductor body having the gate insulating film; a step of forming on the first tungsten film a third insulating film having an opening at a specified area of the first region; a step of introducing a first impurity into the semiconductor body through the opening in the third insulating film to form a punch-through stopper region of a first conductivity type, the punch-through stopper region being located between a surface of the semiconductor body having the first tungsten film thereon and the channel stopper region; a step of selectively depositing inside the opening in the third insulating film a second tungsten film thicker than the first tungsten film; a step of removing the third insulating film; a step of removing an exposed portion of the first tungsten film; a step of forming a fourth insulating film on a sidewall of a layered film of the first and second tungsten films; and a step of introducing a second impurity into the semiconductor body to form a source and a drain both having a second conductivity type opposite to the first conductivity type.

Claim 40

A method of manufacturing a semiconductor device comprising: a step of forming a device isolation insulating film around a first region of a semiconductor body having a first conductivity type; a step of introducing an impurity into the first region and through the device isolation insulating film so as to form a channel stopper region; a step of forming a gate insulating film in the first region; a step of forming a first tungsten film on the semiconductor body having the gate insulating film; a step of forming on the first tungsten film a third insulating film having an opening at a specified area of the first region; a step of introducing a first impurity into the semiconductor body through the opening in the third insulating film to form a punch-through stopper region of a first conductivity type, the punch-through stopper region being located between a surface of the semiconductor body having the first tungsten film thereon and the channel stopper region; a step of selectively depositing inside the opening in the third insulating film a second tungsten film thicker than the first tungsten film; a step of removing the third insulating film; a step of removing an exposed portion of the first tungsten film; a step of forming a fourth insulating film on a sidewall of a layered film of the first and second tungsten films; and a step of introducing a second impurity into the semiconductor body to form a source and a drain both having a second conductivity type opposite to the first conductivity type.

Claim 41

A method of manufacturing a semiconductor device comprising: a step of forming a device isolation insulating film around a first region of a semiconductor body having a first conductivity type; a step of introducing an impurity into the first region and through the device isolation insulating film so as to form a channel stopper region; a step of introducing a first impurity into the semiconductor body having the device isolation insulating film to form a first impurity doped layer of a first conductivity type; a step of forming a gate insulating film in the first region; a step of forming a first tungsten film on the semiconductor body having the gate insulating film; a step of forming on the first tungsten film a third insulating film having an opening at a specified area of the first region; a step of introducing a second impurity through the opening in the third insulating film into the semiconductor body to a depth shallower than the first impurity doped layer to form a punch-through stopper region of a first conductivity type, the punch-through stopper region being located between a surface of the semiconductor body having the first tungsten film thereon and the channel stopper region; a step of selectively depositing inside the opening in the third insulating film a second tungsten film thicker than the first tungsten film; a step of removing the third insulating film; a step of removing an exposed portion of the first tungsten film; a step of forming a fourth insulating film on a sidewall of a layered film of the first and second tungsten films; and a step of introducing a second impurity into the semiconductor body to form a source and a drain both having a second conductivity type opposite to the first conductivity type.

Claim 42

A method of manufacturing a semiconductor device comprising: a step of forming a device isolation insulating film around a first region of a semiconductor body having a first conductivity type; a step of introducing an impurity into the first region and through the device isolation insulating film so as to form a channel stopper region; a step of introducing a first impurity into the semiconductor body having the device isolation insulating film to form a first impurity doped layer of a first conductivity type; a step of forming a gate insulating film in the first region; a step of forming a first tungsten film on the semiconductor body having the gate insulating film; a step of forming on the first tungsten film a third insulating film having an opening at a specified area of the first region; a step of introducing a second impurity through the opening in the third insulating film into the semiconductor body to a depth shallower than the first impurity doped layer to form a punch-through stopper region of a first conductivity type, the punch-through stopper region being located between a surface of the semiconductor body having the first tungsten film thereon and the channel stopper region; a step of selectively depositing inside the opening in the third insulating film a second tungsten film thicker than the first tungsten film; a step of removing the third insulating film; a step of removing an exposed portion of the first tungsten film; a step of forming a fourth insulating film on a sidewall of a layered film of the first and second tungsten films; and a step of introducing a second impurity into the semiconductor body to form a source and a drain both having a second conductivity type opposite to the first conductivity type.