Self-aligned tin formation by N2+ implantation during two-step annealing Ti-salicidation

Claim 1

A method for fabricating a semiconductor device having a silicon containing material to which a metal contact is to be made, said device including oxide containing regions, said step including the sequence of steps comprising, initially forming a blanket layer of titanium on said device having a thickness of about 80 nm, then performing a first annealing step on said device comprising rapid thermal annealing of said device in a nitrogen gas atmosphere at about 680° C. for about forty seconds to convert said titanium layer into reaction products comprising titanium silicide over said silicon containing material and titanium nitride over said oxide containing regions, next etching said device to remove unreacted portions of said titanium and to remove said titanium nitride from said device, next performing a step of ion implanting nitrogen molecular ions into said titanium silicide, on said device, next forming a dielectric cap over said device, and then heating said device at about 920° C. for about forty minutes to flow said dielectric cap and performing a second annealing step, thereby annealing said titanium silicide reaction products of titanium after said ion implanting of said nitrogen molecular ions.

Claim 2

A method for fabricating a semiconductor device having a silicon containing material to which a metal contact is to be made, said device including oxide containing regions, said step including the sequence of steps comprising, initially forming a blanket layer of titanium on said device having a thickness of about 80 nm, then performing a first annealing step on said device comprising rapid thermal annealing of said device in a nitrogen gas atmosphere at about 680° C. for about forty seconds to convert said titanium layer into reaction products comprising titanium silicide over said silicon containing material and titanium nitride over said oxide containing regions, next etching said device to remove unreacted portions of said titanium and to remove said titanium nitride from said device, next performing a step of ion implanting nitrogen molecular ions into said titanium silicide, on said device, next forming a dielectric cap over said device, and then heating said device at about 920° C. for about forty minutes to flow said dielectric cap and performing a second annealing step, thereby annealing said titanium silicide reaction products of titanium after said ion implanting of said nitrogen molecular ions.

Claim 4

A method for fabricating a semiconductor device having a silicon containing material to which a metal contact is to be made by the sequence of steps comprising, initially forming a blanket layer of titanium on said device, next performing a first annealing step comprising rapid thermal annealing of said device in a nitrogen gas atmosphere at about 680° C. for about forty seconds to convert said titanium layer on said silicon containing material into titanium silicide and forming titanium nitride elsewhere on said device, next etching said device to remove unreacted portions of said titanium and said titanium nitride from said device, then ion implanting nitrogen molecular ions into said device, next forming a borophosphosilicate glass layer over said device, and then heating said device with a second annealing step at a temperature of about 920° C. for about forty minutes to flow said borophosphosilicate glass layer and anneal said titanium silicide after said ion implanting of said nitrogen molecular ions.

Claim 5

A method for fabricating a semiconductor device having a silicon containing material to which a metal contact is to be made by the sequence of steps comprising, initially forming a blanket layer of titanium on said device, next performing a first annealing step comprising rapid thermal annealing of said device in a nitrogen gas atmosphere at about 680° C. for about forty seconds to convert said titanium layer on said silicon containing material into titanium silicide and forming titanium nitride elsewhere on said device, next etching said device to remove unreacted portions of said titanium and said titanium nitride from said device, then ion implanting nitrogen molecular ions into said device, next forming a borophosphosilicate glass layer over said device, and then heating said device with a second annealing step at a temperature of about 920° C. for about forty minutes to flow said borophosphosilicate glass layer and anneal said titanium silicide after said ion implanting of said nitrogen molecular ions.

Claim 7

A method for fabricating a semiconductor device having a silicon containing material to which a metal contact is to be made comprising, starting with a doped silicon substrate with field oxide regions formed thereon, a doped polysilicon gate electrode with sidewalls formed over an oxide layer on the surface of said substrate, and dielectric spacers formed adjacent to said sidewalls of said gate electrode, with source/drain regions formed in said substrate adjacent to said polysilicon gate electrode and said spacers, next forming a blanket layer of titanium on said device having a thickness of about 80 nm, next performing a first rapid thermal annealing process on said device at about 680° C. for about forty seconds in a nitrogen gas atmosphere to produce combinations and compounds of said titanium layer with nitrogen and oxygen resulting titanium, titanium nitride and combinations and compounds of titanium, nitrogen and oxygen, generally defined by TiN x O y where x and y are integers, over portions of said device and to produce titanium silicide over silicon containing portions of said device including the surface of said polysilicon gate electrode and the surfaces of said source/drain regions, next etching said device to remove said titanium, said titanium nitride and said TiN x O y from said device leaving said titanium silicide, C49TiSi x , over said gate electrode and over said source/drain regions on said device, next ion implanting nitrogen 28N 2 + molecular ions into said C49TiSi x on said device with a dose of about 1×10 16 ions/cm 2 at an energy from about 20 KeV to about 50 keV, next forming a dielectric cap over said device, and then heating of said device at about 920° C. for about forty minutes to flow said dielectric cap and provide a second annealing step for said titanium silicide, after said ion implanting of nitrogen molecular ions.

Claim 8

A method for fabricating a semiconductor device having a silicon containing material to which a metal contact is to be made comprising, starting with a doped silicon substrate with field oxide regions formed thereon, a doped polysilicon gate electrode with sidewalls formed over an oxide layer on the surface of said substrate, and dielectric spacers formed adjacent to said sidewalls of said gate electrode, with source/drain regions formed in said substrate adjacent to said polysilicon gate electrode and said spacers, next forming a blanket layer of titanium on said device having a thickness of about 80 nm, next performing a first rapid thermal annealing process on said device at about 680° C. for about forty seconds in a nitrogen gas atmosphere to produce combinations and compounds of said titanium layer with nitrogen and oxygen resulting titanium, titanium nitride and combinations and compounds of titanium, nitrogen and oxygen, generally defined by TiN x O y where x and y are integers, over portions of said device and to produce titanium silicide over silicon containing portions of said device including the surface of said polysilicon gate electrode and the surfaces of said source/drain regions, next etching said device to remove said titanium, said titanium nitride and said TiN x O y from said device leaving said titanium silicide, C49TiSi x , over said gate electrode and over said source/drain regions on said device, next ion implanting nitrogen 28N 2 + molecular ions into said C49TiSi x on said device with a dose of about 1×10 16 ions/cm 2 at an energy from about 20 KeV to about 50 keV, next forming a dielectric cap over said device, and then heating of said device at about 920° C. for about forty minutes to flow said dielectric cap and provide a second annealing step for said titanium silicide, after said ion implanting of nitrogen molecular ions.