Method of making N-type semiconductor region by implantation

Claim 1

In a process for manufacturing a semiconductor device in a body which includes a region composed of single crystal silicon, the improvement comprising causing the region to be an N-type conductivity region by the steps of: introducing into the region a first impurity constituted by an element selected from group V of the Periodic Table; without annealing the region after introducing the first impurity, introducing into the region a second impurity constituted by a halogen element, O, S, or N in an amount sufficient to prevent secondary defects due to the first impurity from being present in the region; and after said steps of introducing a first impurity and a second impurity, annealing the region, wherein said step of introducing a first impurity causes a layer of the region into which the first impurity is introduced to have an amorphous structure and said step of introducing a second impurity is carried out to give the second impurity a profile which extends into the region to a greater depth than does the layer of amorphous structure.