US5652528A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Transceiver circuit and method of transmitting a signal which uses an output transistor to send data and assist in pulling up a bus
Assignee: Hitachi Ltd
•
Filing: 1995-11-17
•
Granted: 1997-07-29
•
Expires: 2015-11-17
Abstract
Abstract A semiconductor integrated circuit device having an input/output circuit for inputting and outputting data having a GTL level includes a pull-down output MOSFET (Q1) and a pull-up output MOSFET (Q2) both electrically connected to an input/output terminal and a gate drive signal generating circuit (DPG) electrically coupled to the gate of the pull-up output MOSFET (Q2). Upon data transmission, the gate drive signal generating circuit (DPG) controls the operation of the output MOSFET (Q2) so that the output MOSFETs (Q1 and Q2) are contemporarily brought into an ON or OFF state according to data to be transmitted. On the other hand, upon data reception, the gate drive signal generating circuit (DPG) forms a control pulse for temporarily turning ON one of the output MOSFETS (Q2) immediately after high-level data has been received, and supplies it to a gate terminal of the output MOSFET (Q2).
Inventors
- 👤 Masaharu Kimura
- 👤 Toshiro Takahashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 16:56
CPC Classifications
H; H03; H03K; H03K19/00; H03K19/0175; H03K19/0185; H03K19/018507; H03K19/01; H03K19/017; H03K19/01707; H03K19/01721
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
214 words
An semiconductor integrated circuit device comprising: an input/output terminal; a first output MOSFET having a source-drain path connected between said input/output terminal and a first source terminal; a second output MOSFET having a source-drain path connected between said input/output terminal and a second source terminal; a first gate drive signal generating circuit connected to a gate of said first output MOSFET, for selectively generating a drive signal to be supplied to the gate of said first output MOSFET in response to data to be transmitted; an input circuit having an input MOSFET whose gate is connected to said input/output terminal; and a second gate drive signal generating circuit connected to a gate of said second output MOSFET; said second gate drive signal generating circuit controlling an operation of said second output MOSFET so as to selectively generate a drive signal to be supplied to the gate of said second output MOSFET in response to data to be transmitted, complementarily to said first output MOSFET and said second output MOSFET; said second gate drive signal generating circuit forming a control signal for temporarily turning on said second output MOSFET based on an input signal outputted from said input circuit in response to a high level input signal supplied to said input/output terminal upon data reception.
Claim 2
Dependent Claim
214 words
An semiconductor integrated circuit device comprising: an input/output terminal; a first output MOSFET having a source-drain path connected between said input/output terminal and a first source terminal; a second output MOSFET having a source-drain path connected between said input/output terminal and a second source terminal; a first gate drive signal generating circuit connected to a gate of said first output MOSFET, for selectively generating a drive signal to be supplied to the gate of said first output MOSFET in response to data to be transmitted; an input circuit having an input MOSFET whose gate is connected to said input/output terminal; and a second gate drive signal generating circuit connected to a gate of said second output MOSFET; said second gate drive signal generating circuit controlling an operation of said second output MOSFET so as to selectively generate a drive signal to be supplied to the gate of said second output MOSFET in response to data to be transmitted, complementarily to said first output MOSFET and said second output MOSFET; said second gate drive signal generating circuit forming a control signal for temporarily turning on said second output MOSFET based on an input signal outputted from said input circuit in response to a high level input signal supplied to said input/output terminal upon data reception.
Claim 3
Dependent Claim
54 words
A semiconductor integrated circuit device according to claim 1, wherein said first gate drive signal generating circuit includes means for forming a gate drive signal for controlling a voltage applied to the gate of said first output MOSFET and allowing an output signal to rise and fall in accordance with a desired slew rate.
Claim 4
Dependent Claim
18 words
A semiconductor integrated circuit device according to claim 1, wherein said input circuit is a CMOS differential-type circuit.
Claim 5
Dependent Claim
23 words
A semiconductor integrated circuit device according to claim 1, wherein said first output MOSFET and said second output MOSFET are N channel MOSFETs.
Claim 6
Dependent Claim
22 words
A semiconductor integrated circuit device according to claim 1, wherein a potential at said input/output terminal is set as a GTL level.
Claim 7
Dependent Claim
27 words
A semiconductor integrated circuit device according to claim 1, wherein a gate width of said second output MOSFET is smaller than that of said first output MOSFET.
Claim 8
Dependent Claim
94 words
A semiconductor integrated circuit device comprising: an input terminal; an output MOSFET having a source-drain path connected between said input terminal and a source terminal; an input circuit having an input MOSFET whose gate is connected to said input terminal; and a gate drive signal generating circuit connected to a gate of said output MOSFET; said gate drive signal generating circuit forming a control pulse for temporarily turning on said output MOSFET based on a signal outputted from said input circuit in response to a high level input signal supplied to said input terminal.
Claim 9
Dependent Claim
94 words
A semiconductor integrated circuit device comprising: an input terminal; an output MOSFET having a source-drain path connected between said input terminal and a source terminal; an input circuit having an input MOSFET whose gate is connected to said input terminal; and a gate drive signal generating circuit connected to a gate of said output MOSFET; said gate drive signal generating circuit forming a control pulse for temporarily turning on said output MOSFET based on a signal outputted from said input circuit in response to a high level input signal supplied to said input terminal.
Claim 10
Dependent Claim
18 words
A semiconductor integrated circuit device according to claim 7, wherein said input circuit is a MOS differential circuit.
Claim 11
Dependent Claim
22 words
A semiconductor integrated circuit device according to claim 7, wherein a potential at said input terminal is set as a GTL level.
Claim 12
Independent Claim
117 words
A method of transmitting a signal, comprising the steps of: driving a pull-down output MOSFET provided in a first semiconductor integrated circuit device so as to be brought into an ON or OFF state in response to an output signal to be transmitted; supplying the output signal to a second semiconductor integrated circuit device through a bus line connected to at least one terminal resistor; judging the level of the output signal by a differential circuit provided in the second integrated circuit device; and temporarily bringing a pull-up output MOSFET provided in the second semiconductor integrated circuit device into an ON state when the output signal is judged as a high level signal at said judging step.
Claim 13
Independent Claim
117 words
A method of transmitting a signal, comprising the steps of: driving a pull-down output MOSFET provided in a first semiconductor integrated circuit device so as to be brought into an ON or OFF state in response to an output signal to be transmitted; supplying the output signal to a second semiconductor integrated circuit device through a bus line connected to at least one terminal resistor; judging the level of the output signal by a differential circuit provided in the second integrated circuit device; and temporarily bringing a pull-up output MOSFET provided in the second semiconductor integrated circuit device into an ON state when the output signal is judged as a high level signal at said judging step.
Claim 14
Dependent Claim
28 words
A method according to claim 10, further including a step of bringing a pull-up output MOSFET into an ON or OFF state complementarily to the pull-down output MOSFET.
Claim 15
Independent Claim
143 words
A system for transmitting a signal, comprising: a first semiconductor integrated circuit device having a pull-down output MOSFET activated so as to enter into an ON or OFF state in response to an output signal to be transmitted; at least one terminal resistor; at least one bus line connected to said terminal resistor and supplied with an output signal from said first semiconductor integrated circuit device; and a second semiconductor integrated circuit device having a pull-up output MOSFET connected to said bus line and a differential input circuit connected to said bus line and for judging the level of the output signal; said second semiconductor integrated circuit device further including a control circuit for temporarily bringing the pull-up output MOSFET provided in said second semiconductor integrated circuit device into an ON state when the output signal is judged as a high level signal.
Claim 16
Independent Claim
143 words
A system for transmitting a signal, comprising: a first semiconductor integrated circuit device having a pull-down output MOSFET activated so as to enter into an ON or OFF state in response to an output signal to be transmitted; at least one terminal resistor; at least one bus line connected to said terminal resistor and supplied with an output signal from said first semiconductor integrated circuit device; and a second semiconductor integrated circuit device having a pull-up output MOSFET connected to said bus line and a differential input circuit connected to said bus line and for judging the level of the output signal; said second semiconductor integrated circuit device further including a control circuit for temporarily bringing the pull-up output MOSFET provided in said second semiconductor integrated circuit device into an ON state when the output signal is judged as a high level signal.
Claim 17
Dependent Claim
41 words
A system according to claim 12, wherein said first semiconductor integrated circuit device further includes a pull-up output MOSFET and a control circuit for bringing the pull-up output MOSFET into an ON or OFF state complementarily to the pull-down output MOSFET.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-07-28 | 2001-01-27 | 2001-07-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-07-28 | 2005-01-27 | 2005-07-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-07-28 | 2009-01-27 | 2009-07-29 | $7700.00 | Window Closed / Lapsed |