US5650635A
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Multiple stacked Sb-based heterostructures
Assignee: MP Technologies LLC
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Filing: 1995-07-14
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Granted: 1997-07-22
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Expires: 2015-07-14
Abstract
Abstract The subject invention comprises a plurality of serially connected small volume photovoltaic devices. A single device includes a first layer of n+ doped InSb, a second layer of doped IDAs1-xSbx and a third layer of p+ doped InSb. From 2-50 of these devices are grown by either a low-pressure MOCVD or MBE process to a maximum thickness of about 10 mu m. Alternatively, the first layer may be n+ doped InyGa1-y, Sb the second layer p+ doped InAs1-xSbx and the third layer InyGa1-ySb, repeated to a maximum thickness of 10 m.
Inventors
- 👤 Manijeh Razeghi
- 👤 Jozef F. Piotrowski
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 15:28
CPC Classifications
H; H10; H10W; H10W90/00
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
83 words
An Sb-based heterostructure comprising: a plurality of vertically stacked heterostructures on a substrate, each said heterostructure comprising a first layer of InS, a second layer of the composition InAs 1-x Sb x (x=0.65-1.0) and a third layer of InSb, said first layer being doped with Sn, said second and third layers being doped with an element selected from the group consisting of Zn and Mg, said vertically stacked heterostructures being a total of less than about 10 μm thick in the vertical dimension.
Claim 2
Dependent Claim
83 words
An Sb-based heterostructure comprising: a plurality of vertically stacked heterostructures on a substrate, each said heterostructure comprising a first layer of InS, a second layer of the composition InAs 1-x Sb x (x=0.65-1.0) and a third layer of InSb, said first layer being doped with Sn, said second and third layers being doped with an element selected from the group consisting of Zn and Mg, said vertically stacked heterostructures being a total of less than about 10 μm thick in the vertical dimension.
Claim 3
Dependent Claim
27 words
The heterostructure of claim 1 wherein said first and third layers of InSb are doped to a concentration of from 10.sup.˜ -10 20 atoms cm -3 .
Claim 4
Dependent Claim
24 words
The heterostructure of claim 1 wherein the second layer is doped to a level of from 1×10 16 -5×10 16 atoms cm -3 .
Claim 5
Dependent Claim
29 words
The heterostructure of claim 1 wherein said first and third layers of InSb are doped to a concentration of from 10 18 to 10 -20 atoms cm -3 .
Claim 6
Dependent Claim
15 words
The heterostructure of claim 1 wherein there are from 2-50 of said stacks of heterostructures.
Claim 7
Dependent Claim
88 words
An Sb-based heterostructure comprising: a plurality of vertically stacked heterostructures on a substrate, each heterostructure comprising a first layer of InSb, a second layer of the composition InAs 1-x Sb x (x=0.65-1.0) and a third layer of InSb, said first layer being doped with an element selected from the group of Sn and Si, said second and third layers being doped with an element selected from Zn, Mg and Be; said plurality of heterostructures being a total of less than about 10 μm thick in the vertical direction.
Claim 8
Dependent Claim
88 words
An Sb-based heterostructure comprising: a plurality of vertically stacked heterostructures on a substrate, each heterostructure comprising a first layer of InSb, a second layer of the composition InAs 1-x Sb x (x=0.65-1.0) and a third layer of InSb, said first layer being doped with an element selected from the group of Sn and Si, said second and third layers being doped with an element selected from Zn, Mg and Be; said plurality of heterostructures being a total of less than about 10 μm thick in the vertical direction.
Claim 9
Dependent Claim
110 words
An Sb-based heterostructure comprising: a plurality of vertically stacked heterostructures on a substrate, a buffer layer of InAsSb on said substrate, each heterostructure comprising a first layer of In y Ga 1-y Sb (y=0.65-1.0). a second layer of the composition InAs 1-x Sb x (x=0.65-1.0) and a third layer of In y Ga 1-y Sb, said first layer being doped with an element selected from the group consisting of Sn and Si, said second and third layers being doped with an element selected from the group consisting of Zn, Mg and Be, said vertically stacked heterostructures being a total of less than about 10 μm thick in the vertical dimension.
Claim 10
Dependent Claim
110 words
An Sb-based heterostructure comprising: a plurality of vertically stacked heterostructures on a substrate, a buffer layer of InAsSb on said substrate, each heterostructure comprising a first layer of In y Ga 1-y Sb (y=0.65-1.0). a second layer of the composition InAs 1-x Sb x (x=0.65-1.0) and a third layer of In y Ga 1-y Sb, said first layer being doped with an element selected from the group consisting of Sn and Si, said second and third layers being doped with an element selected from the group consisting of Zn, Mg and Be, said vertically stacked heterostructures being a total of less than about 10 μm thick in the vertical dimension.
Claim 11
Dependent Claim
32 words
The heterostructure of claim 7 wherein said first and third layers of In y Ga 1-y Sb are doped to a concentration of from 10 19 -10 20 atoms cm -3 .
Claim 12
Dependent Claim
29 words
The heterostructure of claim 7 wherein said second layer of InAs 1-x Sb x is doped to a concentration of from 10 16 -2×10 16 atoms cm -3 .
Claim 13
Dependent Claim
7 words
The heterostructure of claim 7 where x=0.8.
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