US5650359A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Composite dielectric passivation of high density circuits
Assignee: Texas Instruments Inc
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Filing: 1995-06-07
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Granted: 1997-07-22
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Expires: 2015-06-07
Abstract
Abstract A composite dieletric film for final passivation of an integrated circuit. First, plasma-enhanced TEOS oxide is deposited to a thickness of 2000 Å, followed by thermal O 3 -TEOS oxide to a thickness of 8000 Å, and then silicon nitride to a thickness of 10,000 Å.
Inventors
- 👤 Byron T. Ahlburn
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 15:30
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/10; H10W74/131; H10W74/137; H10W74/147
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
106 words
A method for the formation of a final passivation composite on an integrated circuit comprising the steps of: a) depositing an initial film of silicon oxide on the circuit by a plasma-enhanced decomposition of TEOS until said initial layer has a thickness of only 1,000 to 3,000 Angstroms, and terminating said deposition at that time; b) then depositing a second film of silicon oxide on said initial film, by reacting ozone with TEOS until said second film has a thickness of 6,000 to 10,000 Angstroms, and terminating said deposition at that time; and c) then depositing a final film of silicon nitride on said second film.
Claim 2
Independent Claim
106 words
A method for the formation of a final passivation composite on an integrated circuit comprising the steps of: a) depositing an initial film of silicon oxide on the circuit by a plasma-enhanced decomposition of TEOS until said initial layer has a thickness of only 1,000 to 3,000 Angstroms, and terminating said deposition at that time; b) then depositing a second film of silicon oxide on said initial film, by reacting ozone with TEOS until said second film has a thickness of 6,000 to 10,000 Angstroms, and terminating said deposition at that time; and c) then depositing a final film of silicon nitride on said second film.
Claim 3
Dependent Claim
23 words
A method as in claim 1 wherein the initial film is deposited at a temperature of 200 degrees C. to 600 degrees C.
Claim 4
Dependent Claim
23 words
A method as in claim 2 wherein the second film of silicon oxide is deposited at a pressure of 400 to 700 Torr.
References Cited (Backward Citations)
US4926243A
Cited
US4845054A
Cited
US5031021A
Cited
US4872947A
Cited
US5100501A
Cited
US5041897A
Cited
US5051380A
Cited
US5005058A
Cited
US5069747A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-07-21 | 2001-01-20 | 2001-07-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-07-21 | 2005-01-20 | 2005-07-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-07-21 | 2009-01-20 | 2009-07-22 | $7700.00 | Window Closed / Lapsed |