US5648932A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Output control circuit for semiconductor memory
Assignee: SK Hynix Inc
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Filing: 1995-12-29
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Granted: 1997-07-15
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Expires: 2015-12-29
Abstract
Abstract An improved output control circuit for a semiconductor memory keeping a certain dependent relationship between a data outputted from a sense amplifier and a latch enable signal when a sense amplifier output detecting unit detects a state change of a node, which includes a sense amplifier output detecting unit for initializing and enabling a sense amplifier to have a certain state when the sense amplifier is in an equalizing state in accordance with voltage applied thereto and for detecting whether voltage levels of both output nodes of the internal amplifying unit are different; a delay unit for delaying an output signal of the sense amplifier output detecting unit for a predetermined time; and an output control unit for outputting an output signal of the delay unit when the sense amplifier is enabled.
Inventors
- 👤 Hee-bok Kang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 06:20
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C7/00; G11C7/06; G11C7/22
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
154 words
An output control circuit for a semiconductor memory wherein a sense amplifier output control circuit is directed to equalizing voltage of both output nodes of an internal amplifying unit to a certain state in accordance with an equalizing signal, and wherein said internal amplifying unit amplifies a cell data and a not-cell data outputted from a cell array block in accordance with a sense amplifier enable signal, comprising: sense amplifier output detecting means for initializing and enabling a sense amplifier to have a certain state when said sense amplifier is in an equalizing state in accordance with voltage applied thereto and for detecting whether voltage levels of both output nodes of the internal amplifying means are different; delay means for delaying an output signal of said sense amplifier output detecting means for a predetermined time; and output control means for outputting an output signal of said delay means when the sense amplifier is enabled.
Claim 2
Dependent Claim
154 words
An output control circuit for a semiconductor memory wherein a sense amplifier output control circuit is directed to equalizing voltage of both output nodes of an internal amplifying unit to a certain state in accordance with an equalizing signal, and wherein said internal amplifying unit amplifies a cell data and a not-cell data outputted from a cell array block in accordance with a sense amplifier enable signal, comprising: sense amplifier output detecting means for initializing and enabling a sense amplifier to have a certain state when said sense amplifier is in an equalizing state in accordance with voltage applied thereto and for detecting whether voltage levels of both output nodes of the internal amplifying means are different; delay means for delaying an output signal of said sense amplifier output detecting means for a predetermined time; and output control means for outputting an output signal of said delay means when the sense amplifier is enabled.
Claim 3
Dependent Claim
39 words
The circuit of claim 1, wherein said sense amplifier output detecting means is initialized to a certain state by voltage levels of both output nodes of the internal amplifying means when the sense amplifier is in an equalizing state.
Claim 4
Dependent Claim
20 words
The circuit of claim 2, wherein said sense amplifier output detecting means includes means for initializing using an equalizing signal.
Claim 5
Dependent Claim
23 words
The circuit of claim 3, wherein said means is enabled when the sense amplifier is equalized and initializes the sense amplifier detecting unit.
Claim 6
Dependent Claim
24 words
The circuit of claim 1, wherein said output control means NANDs a sense amplifier enable signal and an output signal of the delay means.
Claim 7
Dependent Claim
46 words
The circuit of claim 1, wherein said sense amplifier output detecting means includes means for increasing voltage levels of a signal outputted from both output nodes of an internal amplifying means of the sense amplifier to a level of a line voltage at an initial stage.
Claim 8
Dependent Claim
41 words
The circuit of claim 6, wherein said means is a PMOS transistor having the gate electrode connected to the ground and the source and drain electrodes connected to the line voltage and an output node of the internal amplifying means, respectively.
Claim 9
Dependent Claim
45 words
The circuit of claim 1, wherein said sense amplifier output detecting means includes means for decreasing a level of a line voltage to a level of signals outputted from both output nodes of the internal amplifying means of the sense amplifier at an initial stage.
Claim 10
Dependent Claim
12 words
The circuit of claim 8, wherein said means is an NMOS transistor.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-07-14 | 2001-01-13 | 2001-07-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-07-14 | 2005-01-13 | 2005-07-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-07-14 | 2009-01-13 | 2009-07-15 | $7700.00 | Window Closed / Lapsed |