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US5648284A
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Field effect transistor including silicon oxide film and nitrided oxide film as gate insulator film and manufacturing method thereof
Assignee: Renesas Electronics Corp
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Filing: 1996-05-24
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Granted: 1997-07-15
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Expires: 2016-05-24
Abstract
Abstract An N type field effect transistor having a higher resistivity to hot carriers and exhibiting a higher current handling capability even when used at a low gate voltage, and a method of manufacturing such a transistor are provided. A nitrided oxide film is formed on a drain avalanche hot carrier injection region. The nitrided oxide film is highly resistive to drain avalanche hot carriers as compared to a silicon oxide film. The silicon oxide film is formed on a channel hot electron injection region. The silicon oxide film is highly resistive to channel hot electrons as compared to the nitrided oxide film. A major portion of a gate insulator film is a silicon oxide film. The silicon oxide film exhibits a higher current handling capability at a low gate voltage as compared to the nitrided oxide film.
Inventors
- 👤 Shigeru Kusunoki
- 👤 Masahide Inuishi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:32
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6927; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D30/60; H10D30/601; H10D30/605; H10D30/67; H10D30/6704; H10D30/6713; H10D30/6715; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D64/01344; H10D64/01346; H10D64/021; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D64/511; H10D64/517; H10D64/518; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/683; H10D64/693; H10P14/65; H10P14/6516; H10P14/6518; H10P14/6524; H10P14/6526; H10P14/6529; H10P14/69215; H10P30/00; H10P30/20; H10P30/22; Y; Y10; Y10S; Y10S257/00; Y10S257/90
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
105 words
A method of manufacturing a field effect transistor for controlling a flow of carriers by a voltage applied to a gate electrode, said method comprising the following sequential steps: forming a silicon oxide film on a main surface of a semiconductor substrate; forming a gate electrode on said silicon oxide film; nitriding said silicon oxide film located near a side portion of said gate electrode by heating while said silicon oxide film is exposed to a nitriding atmosphere to form a nitrided oxide film; and forming a source region and a drain region in said semiconductor substrate with said gate electrode used as a mask.
Claim 2
Independent Claim
105 words
A method of manufacturing a field effect transistor for controlling a flow of carriers by a voltage applied to a gate electrode, said method comprising the following sequential steps: forming a silicon oxide film on a main surface of a semiconductor substrate; forming a gate electrode on said silicon oxide film; nitriding said silicon oxide film located near a side portion of said gate electrode by heating while said silicon oxide film is exposed to a nitriding atmosphere to form a nitrided oxide film; and forming a source region and a drain region in said semiconductor substrate with said gate electrode used as a mask.
Claim 3
Dependent Claim
22 words
The method of claim 1, wherein a nitridation temperature provided in formation of said nitrided oxide film is 900° C. or more.
Claim 4
Independent Claim
109 words
A method of manufacturing a field effect transistor for controlling a flow of carriers by a voltage applied to a gate electrode, said method comprising the following sequential steps: forming a silicon oxide film on a main surface of a semiconductor substrate; forming a gate electrode on said silicon oxide film; removing said silicon oxide film located near a side portion of said gate electrode; forming a nitrided oxide film by thermally nitriding a separate silicon oxide film formed in a place where said silicon oxide film is removed; and forming a source region and a drain region in said semiconductor with said gate electrode used as a mask.
Claim 5
Independent Claim
109 words
A method of manufacturing a field effect transistor for controlling a flow of carriers by a voltage applied to a gate electrode, said method comprising the following sequential steps: forming a silicon oxide film on a main surface of a semiconductor substrate; forming a gate electrode on said silicon oxide film; removing said silicon oxide film located near a side portion of said gate electrode; forming a nitrided oxide film by thermally nitriding a separate silicon oxide film formed in a place where said silicon oxide film is removed; and forming a source region and a drain region in said semiconductor with said gate electrode used as a mask.
Claim 6
Dependent Claim
22 words
The method of claim 3, wherein a nitridation temperature provided in formation of said nitrided oxide film is 900° C. or more.
Claim 7
Independent Claim
120 words
A method of manufacturing a field effect transistor for controlling a flow of carriers by a voltage applied to a gate electrode, said method comprising the steps of: forming a first nitrided oxide film on a main surface of a semiconductor substrate; forming a gate electrode on said first nitrided oxide film; removing said first nitride oxide film located near a side portion of said gate electrode; forming a second nitrided oxide film having a nitrogen concentration higher than a nitrogen concentration of said first nitrided oxide film, in a place where said first nitrided oxide film is removed; and forming a source region and a drain region in said semiconductor substrate with said gate electrode used as a mask.
Claim 8
Independent Claim
120 words
A method of manufacturing a field effect transistor for controlling a flow of carriers by a voltage applied to a gate electrode, said method comprising the steps of: forming a first nitrided oxide film on a main surface of a semiconductor substrate; forming a gate electrode on said first nitrided oxide film; removing said first nitride oxide film located near a side portion of said gate electrode; forming a second nitrided oxide film having a nitrogen concentration higher than a nitrogen concentration of said first nitrided oxide film, in a place where said first nitrided oxide film is removed; and forming a source region and a drain region in said semiconductor substrate with said gate electrode used as a mask.
Claim 9
Dependent Claim
23 words
The method of claim 5, wherein a nitridation temperature provided in formation of said first nitrided oxide film is 900° C. or less.
Claim 10
Dependent Claim
23 words
The method of claim 5, wherein a nitridation temperature provided in formation of said second nitrided oxide film is 950° C. or more.
References Cited (Backward Citations)
US4774197A
Cited
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