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US5643060A Expired / Lapsed US ⏱️ 0.0 years remaining

System for real-time control of semiconductor wafer polishing including heater

Assignee: Round Rock Research LLC
•
Filing: 1995-10-24
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Granted: 1997-07-01
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Expires: 2015-10-24
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Abstract

Abstract A system for polishing a semiconductor wafer, the system comprising a platen subassembly defining a polishing area; a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face; and means for heating the wafer while the wafer face is being polished.

Inventors

  • 👤 Gurtej S. Sandhu
  • 👤 Trung Tri Doan

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-03 00:10
CPC Classifications
B; B23; B23Q; B23Q15/00; B23Q15/007; B23Q15/013; B23Q15/12; B24; B24B; B24B13/00; B24B13/015; B24B37/00; B24B37/005; B24B37/013; B24B37/11; B24B37/12; B24B37/20; B24B37/205; B24B49/00; B24B49/12; G; G05; G05B; G05B19/00; G05B19/02; G05B19/18; G05B19/404; G05B2219/00; G05B2219/30; G05B2219/34; G05B2219/34403; G05B2219/37; G05B2219/37398; G05B2219/37602; G05B2219/45; G05B2219/45199; G05B2219/45232; G05B2219/49; G05B2219/49052; G05B2219/49057

Claims Analysis

Total Claims: 30
Claim 1
Independent Claim 64 words
A system for polishing a semiconductor wafer, the system comprising: a platen subassembly defining a polishing area; a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face; and a heater supported by the polishing head and controllably heating the wafer while the wafer face is being polished.
Claim 2
Independent Claim 64 words
A system for polishing a semiconductor wafer, the system comprising: a platen subassembly defining a polishing area; a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face; and a heater supported by the polishing head and controllably heating the wafer while the wafer face is being polished.
Claim 3
Dependent Claim 58 words
A system in accordance with claim 1 wherein the platen subassembly comprises a platen having a hollow interior, and wherein the system further comprises a fluid passage in fluid communication with the hollow interior, and a pump in fluid communication with the fluid passage and conducting fluid through the hollow interior, and a heating element heating the fluid.
Claim 4
Dependent Claim 14 words
A system in accordance with claim 1 wherein the heater comprises a heating filament.
Claim 5
Dependent Claim 19 words
A system in accordance with claim 1 wherein the heater comprises a heating filament supported by the polishing head.
Claim 6
Dependent Claim 40 words
A system in accordance with claim 1 and further comprising a slurry delivery system supplying a slurry to the wafer, and a second heater which selectively heats the slurry, before it is supplied to the wafer, to heat the wafer.
Claim 7
Independent Claim 62 words
A system for polishing a semiconductor wafer, the system comprising: a platen subassembly defining a polishing area; a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face; and means supported by the polishing head for heating the wafer while the wafer face is being polished.
Claim 8
Independent Claim 62 words
A system for polishing a semiconductor wafer, the system comprising: a platen subassembly defining a polishing area; a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face; and means supported by the polishing head for heating the wafer while the wafer face is being polished.
Claim 9
Dependent Claim 27 words
A system in accordance with claim 6 wherein the heating means comprises means for controllably adjusting the temperature of the wafer while the wafer is being polished.
Claim 10
Dependent Claim 16 words
A system in accordance with claim 6 and further comprising means for heating the platen subassembly.
Claim 11
Dependent Claim 41 words
A system in accordance with claim 8 wherein the platen subassembly comprises a platen having a hollow interior, and wherein the means for heating the platen subassembly comprises means for flowing fluid through the hollow interior and for heating the fluid.
Claim 12
Dependent Claim 20 words
A system in accordance with claim 8 wherein the heating means supported by the polishing head comprises a heating filament.
Claim 13
Dependent Claim 31 words
A system in accordance with claim 8 and further comprising means for supplying a slurry to the wafer, and means for heating the slurry before it is supplied to the wafer.
Claim 14
Dependent Claim 18 words
A system in accordance with claim 6 and further comprising a heating filament supported by the platen subassembly.
Claim 15
Independent Claim 89 words
A system for polishing a semiconductor wafer, the system comprising: a platen subassembly defining a polishing area; a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face; means for heating the wafer while the wafer face is being polished, wherein the heating means comprises means for heating the platen subassembly; and means for supplying a slurry to the wafer, wherein the heating means comprises means for changing the composition of the slurry.
Claim 16
Independent Claim 89 words
A system for polishing a semiconductor wafer, the system comprising: a platen subassembly defining a polishing area; a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face; means for heating the wafer while the wafer face is being polished, wherein the heating means comprises means for heating the platen subassembly; and means for supplying a slurry to the wafer, wherein the heating means comprises means for changing the composition of the slurry.
Claim 17
Independent Claim 89 words
A system for polishing a semiconductor wafer, the system comprising: a platen subassembly defining a polishing area; a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face; and means for heating the wafer while the wafer face is being polished, wherein the heating means comprises means for heating the platen subassembly, the means for heating the platen subassembly including means for adjusting the force between the polishing head and the platen subassembly.
Claim 18
Independent Claim 89 words
A system for polishing a semiconductor wafer, the system comprising: a platen subassembly defining a polishing area; a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face; and means for heating the wafer while the wafer face is being polished, wherein the heating means comprises means for heating the platen subassembly, the means for heating the platen subassembly including means for adjusting the force between the polishing head and the platen subassembly.
Claim 19
Independent Claim 102 words
A system for polishing a semiconductor wafer, the system comprising: a platen subassembly defining a polishing area, and having a hollow interior defining a fluid passage; a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face; a pump in fluid communication with the fluid passage and conducting fluid to the fluid passage; means for supplying a slurry to the wafer; and means for heating the wafer while the wafer face is being polished, the heating means including means for changing the composition of the slurry.
Claim 20
Independent Claim 102 words
A system for polishing a semiconductor wafer, the system comprising: a platen subassembly defining a polishing area, and having a hollow interior defining a fluid passage; a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face; a pump in fluid communication with the fluid passage and conducting fluid to the fluid passage; means for supplying a slurry to the wafer; and means for heating the wafer while the wafer face is being polished, the heating means including means for changing the composition of the slurry.
Claim 21
Dependent Claim 21 words
A system in accordance with claim 15 wherein the pump is a liquid pump which conducts liquid through the hollow interior.
Claim 22
Dependent Claim 22 words
A system in accordance with claim 15 and further comprising a heating element heating the fluid that flows through the hollow interior.
Claim 23
Dependent Claim 20 words
A system in accordance with claim 15 wherein the rate of flow of fluid through the hollow interior is controllable.
Claim 24
Dependent Claim 19 words
A system in accordance with claim 15 wherein the temperature of fluid flowing through the hollow interior is controllable.
Claim 25
Independent Claim 108 words
A system for polishing a semiconductor wafer, the system comprising: a platen subassembly defining a polishing area; a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face; a heater system that controllably heats the wafer while the wafer face is being polished, the heater system including a slurry supply system including a plurality of storage areas respectively containing slurries of different compositions, a conduit having an outlet directed to supply slurry to the wafer, and a controllable storage selector which supplies a slurry from a selected storage area to the conduit.
Claim 26
Independent Claim 108 words
A system for polishing a semiconductor wafer, the system comprising: a platen subassembly defining a polishing area; a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face; a heater system that controllably heats the wafer while the wafer face is being polished, the heater system including a slurry supply system including a plurality of storage areas respectively containing slurries of different compositions, a conduit having an outlet directed to supply slurry to the wafer, and a controllable storage selector which supplies a slurry from a selected storage area to the conduit.
Claim 27
Independent Claim 143 words
A system for polishing a semiconductor wafer having a face to be polished and having a backside opposite the face, the system comprising: a platen subassembly defining a polishing area; a polishing head selectively supporting semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face, the polishing head further including a plurality of pressure applicators operative against the backside of the semiconductor wafer, the pressure applicators being controllable to apply isolated pressures to respective regions of the semiconductor wafer to cause alterations in contour of the exposed face of the semiconductor wafer; and a heater system that controllably heats the wafer while the wafer face is being polished, the heater system including a controller adjusting the force between the polishing head and the platen subassembly to affect the temperature of the wafer.
Claim 28
Independent Claim 143 words
A system for polishing a semiconductor wafer having a face to be polished and having a backside opposite the face, the system comprising: a platen subassembly defining a polishing area; a polishing head selectively supporting semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face, the polishing head further including a plurality of pressure applicators operative against the backside of the semiconductor wafer, the pressure applicators being controllable to apply isolated pressures to respective regions of the semiconductor wafer to cause alterations in contour of the exposed face of the semiconductor wafer; and a heater system that controllably heats the wafer while the wafer face is being polished, the heater system including a controller adjusting the force between the polishing head and the platen subassembly to affect the temperature of the wafer.
Claim 29
Independent Claim 168 words
A system for polishing a semiconductor wafer having a face to be polished and having a backside opposite the face, the system comprising: a platen subassembly defining a polishing area; a polishing head selectively supporting semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face, the polishing head further including a plurality of pressure applicators operative against the backside of the semiconductor wafer, the pressure applicators being controllable to apply isolated pressures to respective regions of the semiconductor wafer to cause alterations in contour of the exposed face of the semiconductor wafer; and a heater system that controllably heats the wafer while the wafer face is being polished, the heater system including a slurry supply system including a plurality of storage areas respectively containing slurries of different compositions, a conduit having an outlet directed to supply slurry to the wafer, and a controllable storage selector which supplies a slurry from a selected storage area to the conduit.
Claim 30
Independent Claim 168 words
A system for polishing a semiconductor wafer having a face to be polished and having a backside opposite the face, the system comprising: a platen subassembly defining a polishing area; a polishing head selectively supporting semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face, the polishing head further including a plurality of pressure applicators operative against the backside of the semiconductor wafer, the pressure applicators being controllable to apply isolated pressures to respective regions of the semiconductor wafer to cause alterations in contour of the exposed face of the semiconductor wafer; and a heater system that controllably heats the wafer while the wafer face is being polished, the heater system including a slurry supply system including a plurality of storage areas respectively containing slurries of different compositions, a conduit having an outlet directed to supply slurry to the wafer, and a controllable storage selector which supplies a slurry from a selected storage area to the conduit.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2000-06-30 2000-12-30 2001-07-01 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2004-06-30 2004-12-30 2005-07-01 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2008-06-30 2008-12-30 2009-07-01 $7700.00 Window Closed / Lapsed

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